BF199
Abstract: BF199 RF transistor NPN BF199 bf199 motorola BF199 transistor
Text: MOTOROLA Order this document by BF199/D SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage
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BF199/D
BF199
BF199/D*
BF199
BF199 RF
transistor NPN BF199
bf199 motorola
BF199 transistor
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BF199
Abstract: BF199 FAIRCHILD SEMICONDUCTOR BF199 fairchild transistor NPN BF199 BF199 RF
Text: BF199 BF199 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 25 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current
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BF199
BF199
BF199 FAIRCHILD SEMICONDUCTOR
BF199 fairchild
transistor NPN BF199
BF199 RF
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bf199 equivalent
Abstract: transistor Common Base configuration BF199 data bf199 s parameters RF NPN POWER TRANSISTOR 100MHz BF199 RF india
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage
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QSC/L-000019
BF199
C-120
BF199Rev310303E
bf199 equivalent
transistor Common Base configuration
BF199
data bf199
s parameters RF NPN POWER TRANSISTOR 100MHz
BF199 RF
india
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BF199
Abstract: MW front END transistor NPN BF199 transistor BF199 c 2579 transistor
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE
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BF199
C-120
BF199Rev
240403E
BF199
MW front END
transistor NPN BF199
transistor BF199
c 2579 transistor
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BF199
Abstract: bF199 transistor data bf199 transistor NPN BF199 s parameters RF NPN POWER TRANSISTOR 100MHz
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage
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QSC/L-000019
BF199
C-120
BF199Rev
240403E
BF199
bF199 transistor
data bf199
transistor NPN BF199
s parameters RF NPN POWER TRANSISTOR 100MHz
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BF199 RF
Abstract: BF199 bF199 transistor transistor NPN BF199 transistor BF 199 transistor BF199 Bf 199 BF 199 transistor
Text: BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for em itter-grounded IF stages in TV sets. max. Q5# 1,25 Plastic case ~ JEDEC TO -92 T O -18 compatible The case is impervious to light
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BF199
case00
BF199 RF
BF199
bF199 transistor
transistor NPN BF199
transistor BF 199
transistor BF199
Bf 199
BF 199 transistor
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BF199
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE
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BF199
C-120
BF199Rev
240403E
BF199
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BFQ58
Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S
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6535b05
00M5Mgfl
BF199
O-92d
BF599
BF240
BF840
BF241
BFQ58
BFQ57
BFT99
RF Bipolar Transistors
BFT97
BFP194
BF840
BFT65
BFR34A
BF450
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BF199 parameters
Abstract: BF199
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified DESCRIPTION
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QSC/L-000019
BF199
C-120
BF199Rev110302D
BF199 parameters
BF199
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bf199 equivalent
Abstract: data bf199 RC-1008b transistor NPN BF199 bf199 test
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 21 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage
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BF199
226AA)
bf199 equivalent
data bf199
RC-1008b
transistor NPN BF199
bf199 test
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
bF199 transistor
BF199
F 9016 transistor
transistor 9016 npn
03 transistor
data bf199
ic 9400
BF199 RF
transistor NPN BF199
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BFT98
Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Text: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74
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BF199
BF240
BF241
BF254
BF255
BF414
BF450
BF451
BF506
BF606A
BFT98
transistors bfs17p
BFQ71
BFS55A
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bf199 equivalent
Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
BF199
transistor NPN BF199
bf199 transistor
BF199 RF
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transistor potencia
Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP
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fl531BÃ
BC546
BC547
BC548
BC549
BC556
BC557
PA6015
PB6015
PA6025
transistor potencia
t092
ebc Transistor
BC558 ebc
CEB npn
PB6025
PA6014
transistores
BF494
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BF199 RF
Abstract: bF199 transistor BF199 BF240 TO226AA
Text: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS R a tin g S ym b o l V alue U n it Co Ilector-E m itter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 40 Vdc Vdc Em itter-Base Voltage VEBO 4.0 Collector Current - Continuous ic 100 m Adc Total Device D issipation @ T a = 25°C
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BF199
O-226AA)
BF240
BF199 RF
bF199 transistor
TO226AA
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F240 transistor
Abstract: Transistor F240
Text: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS Sym bol Value U nit C o lle cto r-E m itte r Voltage VCEO 25 Vdc C ollector-B ase Voltage VCBO 40 Vdc E m itter-Base Voltage VEBO 4.0 Vdc C ollector C urrent - C ontinuous lc 100 m Adc Total Device D issipation (S> T a = 25°C
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BF199
O-226AA)
F240 transistor
Transistor F240
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BF199
Abstract: No abstract text available
Text: BF199 CASE 29-04, STYLE 21 TO-92 T0-226AA M A X I M U M R A T IN G S Rating Symbol Value C o lle c to r -E m itte r V olta g e VCEO 25 Unit Vdc C o lle c to r-B a s e V olta g e VCBO 40 Vdc E m itte r-B a s e V olta g e vebo 4 .0 Vdc C o lle ctor C u rre n t - C o n tin u o u s
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BF199
T0-226AA)
BF199
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BF transistor
Abstract: M50C BF199 M-50C bF199 transistor
Text: NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR IV IIC R O E L -.E C 3 T R O IV IIC 2 S CASE T 0-92E BF199 i s an NPN s i l i c o n p l a n a r e p i t a x i a l t r a n s i s t o r d e s ig n e d f o r RF a m p l i f i e r s and v id e o IF a m p l i f i e r s in common e m it t e r c o n f i g u r a t i o n .
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BF199
T0-92E
300mW
47MHz
35MHz
3-00iÃ
BF transistor
M50C
M-50C
bF199 transistor
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transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
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Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
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bf199
Abstract: data bf199 BF199 RF
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF T ransistor NPN Silicon COLLECTOR 1 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 25 Vdc C ollector-B ase Voltage v CBO 40 Vdc E m itte r-B a se Voltage v EBO 4.0 Vdc 'c 100 mAdc
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BF199
bf199
data bf199
BF199 RF
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n3904
Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in
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mpsh17
mpsh10
bf374
bf375
bf959
mps918
n3904
2n3903
2n4400
mps2369
CEB npn
BF509
pnp BF959
BF240 CEB
BF255
BF371 MOTOROLA
MPSH81
BF241 CEB
MPS3640
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PN3563
Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Text: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700
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SD113D
2N3663
T0-92
2N5179
MMBT5179
O-236*
MPS5179
2N5770
2N918
PN3563
MPSH24
2N3663
2N5179
2N5770
2N918
BF199
MMBT5179
MMBT918
MPS5179
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Untitled
Abstract: No abstract text available
Text: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN PNP NATL SEnlC0N] discrete) h fE V CE0(Sutt) »C (Volts) Min (mA) Max Min Iq ^ c e mA (MHZ) Min C#|, PF Max *T V NF (dB) @ f Package Max MHz 2N3663 12 50 20 8.0 10 700
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SD113D
2N3663
2N5179
MMBT5179
MPS5179
2N5770
2N918
MMBT918
PN918
BF199
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bf311
Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Text: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •
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BF115
O-72J
BF152
O-106
BF153
BF155
O-72G
BF158
bf311
BF494
BF253
BF595
BF200 transistor
BF271
BF184
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