BF181 TRANSISTOR Search Results

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

2N3933

Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

BF167

Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot

BF167

Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

BF311

Abstract: BF374 BF494 bf199 BF199 BF253
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38

BF311

Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max

BF311

Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •

bf173

Abstract: bf182
Contextual Info: DIM A MIN MAX 5,84 B 5,24 4,52 C D 4,31 0,40 5,33 E - 0,76 4,95 0,53 F 1,14 1,39 G H 2,28 2,97 0,91 0,71 12,7 1,17 1,22 - 12 DEG 48 DEG J K L ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Case

BF167

Abstract: 2N918 pin configuration BF184 BF185 BF115 BF180 BF173 BF181 BF200 bf200 pin configuration
Contextual Info: DIM A B C D E F G H J K L MIN 5,24 4,52 4,31 0,40 MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 1,22 48 DEG - 1.14 2,28 0,91 0,71 12,7 12 DEG ALL D IM EN SIO N S A R E IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4

2N918 pin configuration

Abstract: 2SC2570 BF115 2N3933 BF167 BF173 BF180 BF181 2N5179 2N917
Contextual Info: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code

2sc2570

Abstract: BF200 transistor BF173 BF167 BF184 2N918 pin configuration BF115 2SC568 BF185 BF180
Contextual Info: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code

BF180

Abstract: BF115 BF167 BF184 2N918 pin configuration BF181 BF185 TO-72 TO72 2N3933
Contextual Info: DIM A B C D E F G H MIN 5,24 4,52 4,31 0,40 1,14 2,28 . 0,91 MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 J K L 0,71 12,7 12 DEG - 1,22 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter

Contextual Info: TO-72 DIM D A MIN 5,24 5,84 MAX B 4,52 4,95 C D 4,31 0,40 5,33 0,53 E F - 1,14 0,76 1,39 G 2,28 . 2,97 H 0,91 1,17 J K 0,71 12,7 1,22 - L 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Stylo PIN 1 TO-72 PIN 2 PIN 3

BF480

Abstract: BF194 BF196 BF181 BF195 bf197 BF450 BF194 pins Bf490 BF362
Contextual Info: Transistors silicon p-n-p pow er transistors book 1 parts 1 and 2 Drawing reference Outline: TO-3 V» (V (A ) (A ) -6 0 -8 0 -1 0 0 -6 0 -8 0 12 8 h FE Ptot m in . m ax. Trnb= 25 C <°C) m at f y VcE(sat) m in. m ax. lc at lc *8 (A ) (M Hz) (V» (A) (A)

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;