BF173 TRANSISTOR Search Results

BF173

Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Contextual Info: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages

BF173 Transistor

Abstract: BF173 bf173 datasheet c 2579 power transistor
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF173 TO-72 Metal Can Package For use in LF Video Amplifier uncontrolled stages of Television Receivers.

BF173

Abstract: BF173 Transistor 3430J to-72j 364MHz
Contextual Info: Ul BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO E E E L —EECDTTROrsllCSS CASE T 0 -7 2 J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS

BF311

Abstract: BF374 BF494 bf199 BF199 BF253
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38

Contextual Info: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS

BF173 Transistor

Abstract: BF173
Contextual Info: BF 173 IV! I C R a NPN SILICON PLANAR EPITAXIAL TRANSISTOR ΠL_ΠC T"F* o r s i I C S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS

BF167

Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot

2N3933

Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

BF167

Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

BF311

Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max

BF311

Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350

bf173

Abstract: bf182
Contextual Info: DIM A MIN MAX 5,84 B 5,24 4,52 C D 4,31 0,40 5,33 E - 0,76 4,95 0,53 F 1,14 1,39 G H 2,28 2,97 0,91 0,71 12,7 1,17 1,22 - 12 DEG 48 DEG J K L ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Case

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •

2N918 pin configuration

Abstract: 2SC2570 BF115 2N3933 BF167 BF173 BF180 BF181 2N5179 2N917
Contextual Info: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code

2sc2570

Abstract: BF200 transistor BF173 BF167 BF184 2N918 pin configuration BF115 2SC568 BF185 BF180
Contextual Info: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code

BF180

Abstract: BF115 BF167 BF184 2N918 pin configuration BF181 BF185 TO-72 TO72 2N3933
Contextual Info: DIM A B C D E F G H MIN 5,24 4,52 4,31 0,40 1,14 2,28 . 0,91 MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 J K L 0,71 12,7 12 DEG - 1,22 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter

Contextual Info: TO-72 DIM D A MIN 5,24 5,84 MAX B 4,52 4,95 C D 4,31 0,40 5,33 0,53 E F - 1,14 0,76 1,39 G 2,28 . 2,97 H 0,91 1,17 J K 0,71 12,7 1,22 - L 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Stylo PIN 1 TO-72 PIN 2 PIN 3

2SC2570

Abstract: BF184 BF180 2N918 pin configuration BF167 TO-72 to72 BF115 BF181 2SC568
Contextual Info: 1 f a i DIM A B C D E F G H J K L MIN 5,24 4,52 4,31 0,40 1,14 2,28 0,91 0,71 12,7 12DEG MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 1,22 48DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available' in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter

SOT-23 X1

Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
Contextual Info: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK