BF TRANSISTOR DATASHEET Search Results

transistor bc 7-40

Contextual Info: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR

BF506

Contextual Info: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.

shockley diode application

Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
Contextual Info: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

Contextual Info: Die Datasheet GA10JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 120 mΩ 25 A 120 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: Electrical Datasheet* GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 m Features •       175 °C maximum operating temperature Temperature independent switching performance

Contextual Info: Electrical Datasheet* GA10JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 1.7 V 10 A 170 m Features •       250 °C maximum operating temperature Temperature independent switching performance

Contextual Info: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features •       250 °C maximum operating temperature Temperature independent switching performance

Contextual Info: Die Datasheet GA05JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 240 mΩ 15 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: Electrical Datasheet* GA20JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 20 A 70 m Features •       175 °C maximum operating temperature Temperature independent switching performance

laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
Contextual Info: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these

Contextual Info: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA50JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA20JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 65 mΩ 45 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

ZHB6790

Abstract: 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

ZHB6718

Abstract: 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

Contextual Info: ., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 40347 Silicon N-P-N Power Transistor Maximum Ratings, Absolute-Maximum Values: •COLLECTOR-TO-BASE VOLTAGE. .! • COLLECTOR-TO-EMITTER VOLTAGE:

transistor gfs

Abstract: 2N5116 J176 2N3993 2N3993A IFP44 J174 J175 J177 P1086
Contextual Info: G 30 9-97 PJ99 Process SILICON JU N C T IO N FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, T s 10 mA +150°C -65°C to +175°C

SMD TRANSISTOR MARKING BF

Abstract: lm357 3578 smd japanese transistor reference manual 1N5819 spice model 3578AM SMD IN5819 vf SIMPLE SWITCHER PCB Layout Guidelines In5819 smd schottky transistor spice
Contextual Info: LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the buck, boost, and inverting configurations. The LM1578A features a unique comparator input stage which not only has

transistor R74

Abstract: BFR740L3RH RF Bipolar Transistor bipolar transistor TR151 rf transistor tunnel diode RF Transistor impedance matching what is transistor rf power transistor
Contextual Info: BF R74 0L3 RH Ma xi m u m RF Inp ut Po wer of Si Ge: C Bipol ar Transisto r BFR7 40L 3 RH Technic al Rep ort T R 151 Revision: Ver 1.0 Date: 20. Auguest 2009 RF and Protecti on Devi c es Edition 20. Auguest 2009 Published by Infineon Technologies AG 81726 Munich, Germany