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    BF 998 Search Results

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    BF 998 Price and Stock

    NXP Semiconductors BF998,215

    RF MOSFET 8V SOT143B
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    NXP Semiconductors BF998,235

    RF MOSFET 8V SOT143B
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    NXP Semiconductors BF998R,215

    RF MOSFET 8V SOT143R
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    NXP Semiconductors BF998R,235

    RF MOSFET 8V SOT143R
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    NXP Semiconductors BF998WR,115

    RF MOSFET 8V CMPAK-4
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    BF 998 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF998 Infineon Technologies Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; Original PDF
    BF998 Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
    BF998 Infineon Technologies Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. Original PDF
    BF 998 Infineon Technologies TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original PDF
    BF998 NXP Semiconductors BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS Original PDF
    BF998 Philips Semiconductors Silicon N-Channel MOSFET Tetrode Original PDF
    BF998 Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Original PDF
    BF998 Siemens Cross Reference Guide 1998 Original PDF
    BF998 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BF998 Siemens Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Original PDF
    BF998 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF998 Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original PDF
    BF998 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF998 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF998 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF998 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF998 Philips Semiconductors Silicon n-channel dual gate MOS-FET Scan PDF
    BF998 Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Scan PDF
    BF998,215 NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal Original PDF
    BF998,215 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF

    BF 998 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF 195 pin configuration

    Abstract: Bf 353 BF998 BF998R f 4556 BF 998 526 8694 010
    Text: BF 998 / BF 998 R TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range


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    BF998 BF998R D-74025 BF 195 pin configuration Bf 353 f 4556 BF 998 526 8694 010 PDF

    marking code g1s

    Abstract: Q62702-F1129 D 998 TRANSISTOR
    Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO


    Original
    Q62702-F1129 OT-143 marking code g1s Q62702-F1129 D 998 TRANSISTOR PDF

    BF998

    Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
    Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129


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    Q62702-F1129 OT-143 BF998 marking code GL Q62702-F1129 d 998 transistor circuit PDF

    SOT-343

    Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
    Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF998 Q62702-F1586 OT-343 Jul-30-1996 SOT-343 G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note PDF

    BF998

    Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
    Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BF998 Q62702-F1177 OT-143R Oct-23-1996 BF998 G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge PDF

    6045

    Abstract: 741E TR-16 2SD2696
    Text: SPICE PARAMETER 2SD2696 by ROHM TR Div. * Q2SD2696 NPN BJT model * Date: 2006/12/15 .MODEL Q2SD2696 NPN + IS=120.00E-15 + BF=503.72 + VAF=50 + IKF=1.7237 + ISE=120.00E-15 + NE=1.6045 + BR=21.027 + VAR=100 + IKR=.17783 + ISC=129.43E-15 + NC=2.8300 + NK=.99886


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    2SD2696 Q2SD2696 00E-15 43E-15 000E-3 741E-12 6740E-12 83E-12 6045 741E TR-16 2SD2696 PDF

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998 PDF

    741E

    Abstract: EMX28
    Text: SPICE PARAMETER EMX28 by ROHM TR Div. * QEMX28 NPN BJT model * Date: 2006/12/15 .MODEL QEMX28 NPN + IS=120.00E-15 + BF=503.72 + VAF=50 + IKF=1.7237 + ISE=120.00E-15 + NE=1.6045 + BR=21.027 + VAR=100 + IKR=.17783 + ISC=129.43E-15 + NC=2.8300 + NK=.99886 + RE=50.000E-3


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    EMX28 QEMX28 00E-15 43E-15 000E-3 741E-12 6740E-12 83E-12 741E EMX28 PDF

    BF 998

    Abstract: BF998 BF998R 4551
    Text: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R


    Original
    BF998/BF998R BF998 BF998R D-74025 07-Mar-97 BF 998 4551 PDF

    BF998

    Abstract: bf 107 a BF998R BF998 depletion BF998A k d 998 0
    Text: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R


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    BF998/BF998R BF998 BF998R D-74025 17-Apr-96 bf 107 a BF998 depletion BF998A k d 998 0 PDF

    transistor 1548

    Abstract: 2F TRANSISTOR gummel TRANSISTOR 2f 2SD1624
    Text: SPICE PARAMETER 2SD1624 LARGE-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value IS 505.2f 213.0 BF NF 998.4m VAF 75.00 IKF 15.48 ISE 271.9f NE 1.474 BR 80.00 NR 1.000 VAR 100.0 IKR 30.00m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value


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    2SD1624 27deg transistor 1548 2F TRANSISTOR gummel TRANSISTOR 2f 2SD1624 PDF

    cbc 327

    Abstract: BF 998 equivalent
    Text: MT3S18T SPICE2G6 model parameters 20010806 NET LIST .SUBCKT MT3S18T 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN NPN + IS = + BF = + NF = + VAF = + IKF = + ISE = + NE = + BR = + NR = + VAR = + IKR = + ISC =


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    MT3S18T 39nted cbc 327 BF 998 equivalent PDF

    2SC4215

    Abstract: CB-2 equivalent
    Text: 2SC4215 SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC4215 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE +


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    2SC4215 CB-2 equivalent PDF

    siemens rs 1002

    Abstract: BF995 siemens rs 1003
    Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 995 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code tape and reel Pir Conf igurat ion 4 1 2 3 BF 995 MB Q62702-F936 S D Gì Package1) G, SOT-143 Maximum Ratings Parameter Symbol


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    Q62702-F936 OT-143 siemens rs 1002 BF995 siemens rs 1003 PDF

    TRANSISTOR mosfet BF998

    Abstract: BF998 SIEMENS BF998 marking code
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    BF998 Q62702-F1586 OT-343 TRANSISTOR mosfet BF998 BF998 SIEMENS BF998 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    BF998 Q62702-F1586 OT-343 fl235bG5 PDF

    d 998 transistor circuit

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998


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    Q62702-F1129 T-143 M27ol BB5151 J8B515 d 998 transistor circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: 33E D • Ô23b350 001bô30 1 M S I P Silicon N-Channel MOSFET Tetrode BF 998 SIEMENS/ SPCL-, SEMICONDS • Short-channel transistor w ith high S /C quality factor • For low-noise, gain-controlled input stages up to 1 GHz T -3 I-2 S ' Type M arkin g O rd erin g coda


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    23b350 62702-F1129 E3b32Q PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998


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    62702-F1129 TheT07304 fi235bQ5 D1E174E Q1517M3 PDF

    031-0560-081

    Abstract: m85049 instructions itt cannon CIT-12 MS25043 MS3057-3A MS25251-16 CA2322-8 CA2322-3 031-0554-161 330-0351-012
    Text: MIL-C-5015 Bulkhead Receptacles BFR/TBF How to Order TBF and BFR pressurized bulkhead receptacles BF 14S-5 P mate with standard MS type plugs 3106, 3107 and TB F 20 - 1 5 PS 3108 if contact arrangements correspond. Both P R E F I X -


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    MIL-C-5015 insul12 MS25251-8 031-0560-081 m85049 instructions itt cannon CIT-12 MS25043 MS3057-3A MS25251-16 CA2322-8 CA2322-3 031-0554-161 330-0351-012 PDF

    TRANSISTOR BH RW

    Abstract: No abstract text available
    Text: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape


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    62702-F1129 1200MÍ 900MHz 800MHz /400MHz 300MH 00MHz -921s TRANSISTOR BH RW PDF

    MIL-C-5015 bulkhead

    Abstract: k 2761
    Text: MIL-C-5015 Bulkhead Receptacles BFR/TBF How to Order TBF and BFR pressurized bulkhead receptacles BF 14S-5 P mate w ith standard M S type plugs 3106, 3107 and TB F 20 - 1 5 PS 3108 if contact arrangements correspond. Both P R E F I X -


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    MIL-C-5015 MIL-C-5015 bulkhead k 2761 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR/TBF MIL-C-5015 Bulkhead Receptacles How to Order BF TBF TBF and BFR pressurized bulkhead receptacles mate with standard MS type plugs 3106, 3107 and 3108 if contact arrangements correspond. Both the BFR and TBF have resilient insulators. The TBF (thru-bulkhead fitting) version has a double-faced


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    MIL-C-5015 PDF

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


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    BB515 p270k2 transistor Bs 998 PDF