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    Vishay Dale TNPW080514K0BEEN

    RES 14K OHM 0.1% 0.26W 0805
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    Vishay Dale TNPV1206240KBEEN

    TNPV1206 240K 0.1% T-9 E52 E3
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    Vishay Dale TNPW12062K74BEEN

    RES 2.74K OHM 0.1% 0.52W 1206
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    Vishay Dale TNPW120689K8BEEN

    RES 89.8K OHM 0.1% 0.52W 1206
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    DigiKey TNPW120689K8BEEN Cut Tape 980 1
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    Vishay Dale TNPW060314K0BEEN

    RES 14K OHM 0.1% 0.21W 0603
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    DigiKey TNPW060314K0BEEN Cut Tape 900 1
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    BEEN Datasheets Context Search

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    IC - TC4001BP

    Abstract: No abstract text available
    Text: TC4001BP/BF/BFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4001BP,TC4001BF,TC4001BFT TC4001B Quad 2 Input NOR Gate The TC4001B is 2-input positive NOR gate, respectively. Since the outputs of these gates are equipped with the buffers, the input/output transmission characteristics have been


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    PDF TC4001BP/BF/BFT TC4001BP TC4001BF TC4001BFT TC4001B TC4001BP TC4001BF IC - TC4001BP

    ieee802.11b

    Abstract: No abstract text available
    Text: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth


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    PDF CGB240B 22dBm, -33dB IEEE802 ieee802.11b

    smd diode ab2

    Abstract: spike killer smd diode WB amobead AB3X2X3 smd 5DY WB 3 mosfet AB3X2X3SM snubber circuit for mosfet
    Text: 2. Noise Suppression Devices AMOBEADS An amorphous noise suppression device is unique and completely different from conventional noise filters. Conventional noise prevention products focus on somehow minimizing the noise after it's been created, by typically trying to absorb the noise, and so their effectiveness in noise reduction is directly


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    PDF 20mv/div Frequency150kHz 00V/div Frequency250kHz 50mv/div smd diode ab2 spike killer smd diode WB amobead AB3X2X3 smd 5DY WB 3 mosfet AB3X2X3SM snubber circuit for mosfet

    Untitled

    Abstract: No abstract text available
    Text: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its


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    PDF CGB240 IEEE802

    Untitled

    Abstract: No abstract text available
    Text: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/104C NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Linear, Line Drivers and Receivers, Monolithic Silicon MIL-M-38510/104C, dated 01-Jul-2008, has been reviewed and determined to be valid for use in acquisition.


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    PDF MIL-M-38510/104C 03-Apr-2013 MIL-M-38510/104C, 01-Jul-2008,

    UC1524A

    Abstract: uc3524a
    Text: UC1524A UC2524A UC3524A Advanced Regulating Pulse Width Modulators FEATURES • • • DESCRIPTION The UC1524A family of regulating PWM ICs has been designed to retain the same highly versatile architecture of the industry standard UC1524 SG1524 while offering substantial improvements to many of its limitations. The UC1524A


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    PDF UC1524A UC2524A UC3524A UC1524 UC1524 SG1524) UC1524A, uc3524a

    CCIR-18 multi-burst

    Abstract: No abstract text available
    Text: OPA360 SB0S294D − DECEMBER 2003 − REVISED DECEMBER 2004 3V Video Amplifier with 6dB Gain and Filter in SC70 FEATURES DESCRIPTION D D D D The OPA360 high-speed amplifier is optimized for 3V portable video applications. It has been specifically designed to be compatible with digital-to-analog


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    PDF OPA360 SB0S294D OPA360 OPA360. 300mV CCIR-18 multi-burst

    15514

    Abstract: No abstract text available
    Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF SiB410DK AN609, 8029u 6830m 5384m 0019m 0110u 9058u 5505u 15514

    Untitled

    Abstract: No abstract text available
    Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF IRFZ44S IRFZ44L SiHFZ44S SiHFZ44LL AN609, THERMAZ44S 9021m 9076m 0860m

    APQ03SN80AB

    Abstract: MOSFET 800V 3A 800VVGS
    Text: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


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    PDF APQ03SN80AB 00V/3A APQ03SN80AB-XXM0 APQ03SN80AB MOSFET 800V 3A 800VVGS

    Untitled

    Abstract: No abstract text available
    Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF IRFP21N60L SiHFP21N60L AN609, 07-Jun-10

    Untitled

    Abstract: No abstract text available
    Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF IRFIBC40G SiHFIBC40G AN609, 31-May-10

    si5429

    Abstract: No abstract text available
    Text: Si5429DU_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF Si5429DU AN609, 5457m 6672m 2405m 2799m 3397m 0804m 0570u 4741u si5429

    Fdd spindle motor ncl

    Abstract: pll motor control
    Text: TC9203P/F PLL MOTOR CONTROL FOR FDD TC9203P/F are C 2MOS LSI designed for controlling the motor of especially for Disk Spindle Drive FDD . 8-bit D/A converter system has been employed for each of the speed control system (AFC) and the phase control system (APC) and realize a wide reduction of


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    PDF TC9203P/F TC9203P/F T77bU 680MHz Fdd spindle motor ncl pll motor control

    Untitled

    Abstract: No abstract text available
    Text: SAFETY DRGANIZATIDNS RELIABILITY SPECIFICATIONS: TH IS F ILT E R HAS BEEN FORMALLY RRCDONIZOD, C ER TIFIED DR APPROVED BY THE LIST ED AGENCY, THEREFORE, ALL TEST/REQUIREMENTS SP EC IFIED IN THE LATEST REVISION OF TBE FOLLOWING AGENLY STANDARDS HAVE BEEN MET


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    PDF 50-00H 250VAC

    Untitled

    Abstract: No abstract text available
    Text: Quality Conformance Inspection of Finished Products 4. Q u a lity C o n fo rm a n c e In s p e c tio n o f Finished P ro du cts T he im portance of cre a tin g quality a n d reliability in sem iconductor products d u rin g the design an d m a n u fa c tu rin g p ha se s h a s been described. In order to check for com pliance in th e q u a lity control


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    PDF Assurance-16

    CTC 313 pin diagram

    Abstract: No abstract text available
    Text: TMPZ84C30A TO SH IBA TMPZ84C30AP-6 / TMPZ84C30AM-6 / TMPZ84C30AT-6 TMPZ84C30AP-8 TLCS-Z80 CTC : COUNTER TIMER CIRCUIT 1. GENERAL DESCRIPTION AND FEATURES The TMPZ84C30A hereinafter referred to as CTC is CMOS version of Z80 CTC and has been designed to provide low power operation.


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    PDF TMPZ84C30A TMPZ84C30AP-6 TMPZ84C30AM-6 TMPZ84C30AT-6 TMPZ84C30AP-8 TLCS-Z80 TMPZ84C30A TMPZ84C30AP-6/AM-6/AT-6 CTC 313 pin diagram

    Untitled

    Abstract: No abstract text available
    Text: 5. Cleaning of Circuit Boards Circuit boards are cleaned a fte r devices have been soldered on. T h e follow ing points should be noted regarding cleaning. 1. These solvents are recom m ended for cleaning. ’ Freon TE, Freon T F Do not use chlorine based solvents triclene group, etc. .


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    PDF

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


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    PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    Untitled

    Abstract: No abstract text available
    Text: y UNITRODE UC1524A UC2S24A UC3524A Advanced Regulating Pulse Width Modulators DESCRIPTION FEATURES Fully Interchangeable with Standard UC1524 Family The UC1524A family of regulating PWM ICs has been designed to retain the same highly versatile architecture of the industry standard UC1524 SG1524


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    PDF UC1524 UC1524A UC2S24A UC3524A UC1524 SG1524) UC1524A, 200ns

    DN27

    Abstract: No abstract text available
    Text: DN-27 UNITRODE Design Note UC1842/UC1842A FAMILY SUMMARY OF FUNCTIONAL DIFFERENCES The industry standard series of UC1842/43/44/45 devices has been improved for higher frequency, off-line power supplies. This new "A" series of controllers, UC1842A/43A/44A/45A, feature three major advantages


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    PDF DN-27 UC1842/UC1842A UC1842/43/44/45 UC1842A/43A/44A/45A, UC1842/45 UC1842A/45A UC1842/45A DN27

    Untitled

    Abstract: No abstract text available
    Text: SAFETY ORGANIZATIONS RELIABILITY SPECIFICATIONS: THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED DR APPROVED BY THE LISTED AGENCY. THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION DF THE FOLLOWING AGENCY STANDARDS HAVE BEEN MET: STORAGE TEMPERATURE: -40°C TO +85°C


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    PDF 07NDV08 250VAC 006uF

    Unitrode DN

    Abstract: No abstract text available
    Text: DN-62 UNITRODE Design Note Switching Power Supply Topology Voltage Mode vs. Current Mode by: Robert Mammano Unitrode 1C Corporation has, since its inception, been active in the deveiopment of leading-edge control circuits to implement state-of-the-art pro­


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    PDF DN-62 UCC3570 Unitrode DN

    UFNZ40

    Abstract: No abstract text available
    Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w


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    PDF UFNZ40 UFNZ42 UFNZ40,