Untitled
Abstract: No abstract text available
Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly
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OCR Scan
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HC80805
1x10s
1x109
1x102upsets/module-day)
BADDR11
BARRD10
BDISCRI03
BDISCRI02
BDISCRI01
BADDR21
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PDF
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32kx8 sram
Abstract: VSS115 32kxS
Text: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day
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OCR Scan
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HC80820
PINOUR19
BADDR18
BADDR17
BADDR16
BADDR15
122-lead
32kx8 sram
VSS115
32kxS
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PDF
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Untitled
Abstract: No abstract text available
Text: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day
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OCR Scan
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HC80820
BADDR11
BARRD10
BDISCRI02
BDISCRI01
BADDR21
BADDR20
BADDR19
BADDR18
BADDR17
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec
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OCR Scan
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1x106
1x101
1x109
HC80805
BADDR16
BADDR15
122-lead
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PDF
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