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    BD679 PNP TRANSISTOR Search Results

    BD679 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD679 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD675-BD677-BD679-BD681

    Abstract: BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681
    Text: NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.


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    PDF BD675-BD677-BD679-BD681 BD676-BD678-BD680-BD682 BD675-BD677-BD679-BD681 O-126 BD675 BD677 BD679 BD681 BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681

    BD680

    Abstract: BD678 BD676 ic 313 BD678 equivalent to126 bd680
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION •With TO-126 package ·Complement to type BD675/BD677/BD679 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in


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    PDF BD676/BD678/BD680 O-126 BD675/BD677/BD679 BD676 BD678 BD680 BD680 BD678 BD676 ic 313 BD678 equivalent to126 bd680

    bd679 PNP transistor

    Abstract: BD679 BD680
    Text: Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features ECB With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25


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    PDF BD680 O-126 BD679 O-126 bd679 PNP transistor BD679 BD680

    ST1803DFP

    Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
    Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D


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    PDF OT-32 O-126 BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 ST1803DFP BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent

    BD680

    Abstract: BD677 BD678A BD679 BD680A BD681 BD677A BD678 BD679A BD682
    Text: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment


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    PDF OT-32 BD677 BD677A BD678 BD678A BD679 BD680 BD677 BD678A BD679 BD680A BD681 BD677A BD678 BD679A BD682

    BD679

    Abstract: bd680a st bd68 BD677 BD677A BD678 BD678A BD679A BD680 BD680A
    Text: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment


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    PDF OT-32 BD677 BD677A BD678 BD678A BD679 BD679 bd680a st bd68 BD677 BD677A BD678 BD678A BD679A BD680 BD680A

    BD679

    Abstract: BD677 BD680 BD678 BD678A BD679A BD681 BD677A BD680A BD682
    Text: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment


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    PDF OT-32 BD677 BD677A BD678 BD678A BD679 BD679 BD677 BD680 BD678 BD678A BD679A BD681 BD677A BD680A BD682

    BD675-BD677-BD679-BD681

    Abstract: BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679
    Text: NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.


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    PDF BD675/A BD677/A BD679/A BD681/A BD675/A-BD677/A-BD679/A-BD681/A O-126 BD676/A-BD678/A-BD680/A-BD682/A BD675/A BD677/A BD679/A BD675-BD677-BD679-BD681 BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679

    BD677

    Abstract: BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681
    Text: BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 OT-32 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD677 BD677A BD678 BD678A BD679 BD680 BD680A

    bd679 PNP transistor

    Abstract: bd677 datasheet A-BD682 BD677 transistor BD682 transistor BD677 BD677 BD677A BD678 BD678A
    Text: BD677/A/679/A/681 BD678/A/680/A/682  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 OT-32 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, bd679 PNP transistor bd677 datasheet A-BD682 BD677 transistor BD682 transistor BD677 BD677 BD677A BD678 BD678A

    BD677

    Abstract: 679 st BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681
    Text: BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 OT-32 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD677 679 st BD677A BD678 BD678A BD679 BD680 BD680A

    BD677

    Abstract: bd679 PNP transistor transistor BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A
    Text: BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 OT-32 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD677 bd679 PNP transistor transistor BD677 BD677A BD678 BD678A BD679 BD680 BD680A

    BD677

    Abstract: 682 sot BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681
    Text: BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration


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    PDF BD677/A/679/A681 BD678/A/680/A/682 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD678A, BD677 682 sot BD677A BD678 BD678A BD679 BD680 BD680A

    BD679

    Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
    Text: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA


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    PDF BD675; BD679 OT-32 BD676, BD678, BD680, BD682 BD684. BD675 BD680 T-988 BD676 BD678 BD684 D0344

    BD675

    Abstract: BD679 BD678
    Text: BD675; 677 ^ _ PHILIPS INTERNATIONAL J 5bE D • 711005b OGMSTbS 7ÖB M P H I N T - JJ-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.


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    PDF BD675; BD679 711005b OT-32 BD676, BD678, BD680, BD682 BD684. BD675 BD679 BD678

    FE10E

    Abstract: 8d679 BD676 BD680 BD675 BD678 BD679 BD682 BD684
    Text: BD675; 677 BD679; 681; 683 PHILIPS INTERNATIONAL 5bE D • 711005b 0042^^2 7Ö2 M P H I N T- 3J-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.


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    PDF BD675; BD679; 711005b OT-32 BD676, BD678, BD680, BD682 BD684. BD675 FE10E 8d679 BD676 BD680 BD678 BD679 BD684

    BD438 equivalent

    Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE


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    PDF BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR

    B0680

    Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
    Text: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio


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    PDF 682are mentarytoBD675 BD677 BD679 BD681 B0680 bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD 678 BD680 BD681

    B0679

    Abstract: d677a D679 B0680 DIODE B0677 diode 682 bd677 679A
    Text: SCS-THOMSON BD677/A/679/A/681 BD678/A/680/A/682 HôÊl |[LiÊîi®[MSigi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS * SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLfNGTON CONFIGURATION . INTEGRATED ANTIPARALLEL


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD678A, B0679 d677a D679 B0680 DIODE B0677 diode 682 bd677 679A

    SM 78A

    Abstract: D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A
    Text: SGS-THOMSON S i ;L Ì S lftB lD (S Ì BD 675/75A/77/77A/79/79A /81 B D 676/76A /78/78A /80/80A /82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­


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    PDF BD675/75A/77/77A/79/79A/81 BD676/76A/78/78A/80/80A/82 BD675, BD675A, BD677, BD677A, BD679, BD679A BD681 O-126 SM 78A D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A

    d677a

    Abstract: d676 D675A d681 d677
    Text: SGS-THOMSON BD675/75A/77/ 77A/79/79A/81 BD676/76A/78/ 78A/80/80A/82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­ ration and are mounted in Jedec TO-126 plastic


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    PDF BD675/75A/77/ 7A/79/79A/81 BD676/76A/78/ 8A/80/80A/82 BD675, BD675A, BD677, BD677A, BD679, BD679A d677a d676 D675A d681 d677

    BD786

    Abstract: B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677 BD185
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-126 Package (continued) R esistive Sw itching lcCont ^ C E O (sua) Amps Max Volts Min 4 NPN PNP ^FE M in/M ax @ lc Arrip ts t( US @ lc fr MHZ PD (Case) US Max Max Amp Min @ 25°C Watts 20 BD433 BD434 50 min


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    PDF O-126 BD433 BD434 BD185 BD186 BD435 BD436 2N5190 2N5193 2N6037 BD786 B0680 b0775 BD436 MOTOROLA 2N5190 MOTOROLA 2N5192 BD441 B0785 3N6034 B0677

    b0436

    Abstract: BD139 Power Transistors TO-126 Case
    Text: Power Transistors TO-126 Case Top View TYPE NO. PD A NPN PNP (W) hFf BVCBO BVCEO @ lo (mA) Bottom View VCE(SAT) @ 1C (V) (V> MIN MIN IMI MAX 30 40 40 30 150 500 0.6 1.0 MAX (A) (V) MAX fT (MHz) MIN 2N4921 2N4918 - 2N4922 2N4919- 1.0 30 60 60 30 150 500 0.6


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    PDF O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 b0436 BD139 Power Transistors TO-126 Case

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MDO^miera «! BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    PDF BD677/A/679/A/681 BD678/A/680/A/682 BD677, BD677A, BD679, BD679A BD681 OT-32 BD678, BD678A,