E15NA100
Abstract: STE15NA100 BD 149 transistor data transistor BD 378 IT110
Text: STE15NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E15NA100 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 0.77 Ω 15 A TYPICAL RDS(on) = 0.65 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY
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STE15NA100
E15NA100
E15NA100
STE15NA100
BD 149 transistor data
transistor BD 378
IT110
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Untitled
Abstract: No abstract text available
Text: BDW24/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 23, BD W 23A, BD W 23B and BD W 23C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollecto r E m itter V oltage : BD W 24
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BDW24/A/B/C
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Untitled
Abstract: No abstract text available
Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60
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BDW23/A/B/C
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transistor BD 140
Abstract: BD 140 transistor BD442 b0442 BD440 b0440 BD439 BD441 bd 140
Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , BD 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS C h a r a c te r is t ic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e
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BD440/442
BD439,
BD441
transistor BD 140
BD 140 transistor
BD442
b0442
BD440
b0440
BD439
bd 140
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TRANSISTOR 536
Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO -220 • Complement to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e Symbol
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BD534/536/538
BD533,
BD535
BD537
BD534
BD536
BD538
300/iS.
TRANSISTOR 536
transistor b 536
BD 534
536 transistor
BD 536
TRANSISTOR 538
BD538C
transistor k 538
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Untitled
Abstract: No abstract text available
Text: RN1112,RN1113 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1112, RN1113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors
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RN1112
RN1113
RN1112,
RN2112,
RN2113
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2N5760
Abstract: HEP transistors 2N5758 2N5759 BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545
Text: TYPES 2N5758, 2N5759, 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATION S RECOMMENDED FOR CO M PLEM EN TARY USE WITH T1P544, TIP545, TIP546 • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current
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2N5758,
2N5759,
2N5760
TIP544,
TIP545,
TIP546
2N5758
2N5759
2N5760
HEP transistors
BUY69
hep silicon diode
TIP5
TLP545
BU108
TIP545
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TIP 110 transistor
Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature
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2N5301,
2N5302,
2N5303
2N5302
2N4398,
2N4399
2N5302)
2N5303)
TIP 110 transistor
TIP 22 transistor
TIP 41 transistor
2N5301
TIP 122 transistor APPLICATION circuit
PIT 3055
TIP 122 transistor
TRANSISTOR tip 127
transistor tip 3055
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TRANSISTOR 536
Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD
Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538
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BD534/536/538
BD533,
BD535
BD537
BD534
BD536
BD538
TRANSISTOR 536
536 transistor
BD538
TRANSISTOR BD538
BD536
BD533
IC-101 FAIRCHILD
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN2114~RN2118 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2114, RN2115, RN2116, RN2117, RN2118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm • With Built-in Bias Resistors • Sim plify Circuit Design
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RN2114
RN2118
RN2114,
RN2115,
RN2116,
RN2117,
RN2114
RN2116
RN2117
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BD375
Abstract: BD376 BD377 BD378 BD379 BD380
Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD375, BD 377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit - 50 V - 75 V - 100 V - 45 V : BD378 - 60 V
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BD376/378/380
BD375,
BD377
BD379
BD376
BD378
BD380
BD375
BD378
BD380
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BD944
Abstract: BD946 BD943 BD948 LE17
Text: S e m e la b p ic SEME Coventry Road. Lutterworth Leicestershire LE17 4JB. England Sales telephone: 0455 556565 AQAP-1 Licence No 2M8S02 ^ Licence No. M/103'CECC/UK ESA Admin telephone: 0455 552505 Telex: 341927 SMLLUT G Fax: 0455 552612 Approval Pen<5ing
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2M8S02
BD943;
BD944
BD946
BD948
-VC80
BD944
BD946
BD943
BD948
LE17
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BD377
Abstract: BD375 BD379 BD376 BD378 BD380 BD-375 transistor 377
Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD376, BD 378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage C ollector E m itter Voltage Symbol BD375
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BD375/377/379
BD376,
BD378
BD380
BD375
BD377
BD379
BD377
BD379
BD376
BD-375
transistor 377
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BD 669
Abstract: KD 239C
Text: File Number BD239, BD239A, BD239B, BD239C 669 Epitaxial-Base Silicon N-P-N VERSAWATT Transistors For P o w e r-A m p lif ier and H igh-Speed-Sw itching A p p lic a tio n s Features: • 30 W at 25 °C case temperature ■ 4-A rated collector current ■ Min. f T o f 3 M H z at 10 V , 200 mA
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BD239,
BD239A,
BD239B,
BD239C
D240A,
BD240B,
BD240C
BD239C
BD239-series
BD 669
KD 239C
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TIP34
Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
Text: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C
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TIP34,
TIP34A,
TIP34B,
TIP34C
TIP33,
TIP33A,
TIP33B,
TIP33C
TIP34
TIP34A
TIP34C equivalent
TIP33C
texas instruments tip34
TIP33
TIP33A
TIP33B
TIP34B
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BD249 TEXAS INSTRUMENTS
Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
Text: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P
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BD249,
BD249A,
BD249B,
BD249C
BD250A-C
BD249
BD149A
BD249B
40PEP
BD249 TEXAS INSTRUMENTS
BD149
BD249C TEXAS INSTRUMENTS
B0249C
B0249A
3055 5C pnp transistor
B0249
BD249A
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Untitled
Abstract: No abstract text available
Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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0D17S4
BSD10
BSD12
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TIP42C EQUIVALENT
Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C
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TIP42,
TIP42A.
TIP42B.
TIP42C
TIP41,
TIP41A,
TIP41B,
TIP41C
TIP42
TIP42A
TIP42C EQUIVALENT
TIP 122 transistor APPLICATION NOTES
TIP 122 transistor
tip 127 TRANSISTOR equivalent
transistor tip 5530
TIP 122 transistor APPLICATION circuit
tip 147 TRANSISTOR equivalent
TIP41A equivalent
TIP42A equivalent
TRANSISTOR tip 122
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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PDF
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B0239B
Abstract: bd240
Text: HA RR IS S E M I C O N D SE CT OR BD240, BD240A, BD240B, BD240C SbE ]> • Fite Number 670 4 3 G 2 27 1 GG4Gb5fl EUE H I H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ¡er and High-Speed-Switching Applications Features: ■ 30 W at 25°C case temperature
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BD240,
BD240A,
BD240B,
BD240C
BD239,
BD239A,
B0239B,
BD239C
B0239B
bd240
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PDF
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Untitled
Abstract: No abstract text available
Text: BDT65; 65A BDT65B; 65C _ y v SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. TO-220 plastic envelope. PNP complements are
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BDT65;
BDT65B;
O-220
BDT64;
BDT65
bbS3T31
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dw94c
Abstract: No abstract text available
Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT
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BDW93C
BDW94B/BDW94C
BDW93C
T0-220
BDW94C.
BDW94B
dw94c
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d1711
Abstract: transistor sot-23 marking L8 BCX70J MMBT3904 990fl l8 sot23
Text: SA MS UN G S E M I C O N D U C T O R INC BCX70J 14E D ¡ 7 % 4 1 4 a 0007555 ñ | NPN EPITAXIAL SILICON TRANSÌSTOR T-aq- q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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BCX70J
MMBT3904
OT-23
100MHz
990fl
d1711
transistor sot-23 marking L8
990fl
l8 sot23
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IRGPC40FD2
Abstract: ge c122 transistor c117
Text: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGPC40FD2
10kHz)
GPC40FD2
O-247AC
554S2
IRGPC40FD2
ge c122
transistor c117
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