BD 649/BD 650 Search Results

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

bh 27701

Abstract: 27701A F62Z 27701 BH 27.701 A B-27701A bf 45704 bf 44 704 bh 27 601 B-22601A
Contextual Info: PONTS MONOPHASÉS single phase bridges VR TYPES 0 , 5 A * / tamb=25°< A (V) 100 200 400 600 50 80 150 250 (A) 0,25 220 330 440 (A) 3 1.25 25°C: 125 C (MA) (mA) TYPES 10 100 200 400 600 800 1200 50 80 150 250 380 650 0,1 4 4 4 4 M 14 IN 645 IN 647 IN 649

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

philips BDV64A

Abstract: BDX67
Contextual Info: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)

Contextual Info: POWER TRANSISTORS GENERAL CASES: GENERAL TO- 3 F - 22 PURPOSE TRANSISTORS pt o t T r^ E S ^ W ! NPN PNP 115 : 2N 5874 : 2N 5874A 115 115 ! 2N 5874B 1 2N 5875 150 ! 2N 5875/1 150 150 : 2N 5875/2 150 1 2N 5876 ! 2N 5876A 150 150 ! 2N 5876B 150 : 2N 5877 150

50t65

Abstract: bd650 BD644
Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.

C6020

Contextual Info: M0!?5FDECJ0*E2?52C50CO0I0CO0@@EAC:?E M0*:I0*:5650*9:6=5:?8 M086?4J0AAC@G65 M0BC60CE02?50E-0!?AFED M0EB0.:560 2?860!?AFE0%@56=D );0%4.)60 )+0)16503033/-'%6-215 +6=64@> 2E24@> @:?E0@70$@25 (/0*6C:6D *:?8=660F2=60+C:A=60'FEAFE0EA.020A.0 70@?G6CE6CD

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: L0,>:F6BC2<0!>@ED03080D-4 L0 ?G6B024D?B0?BB64D650 L0DBB10(62;0(?G6B042@23:<:DI L0D0062B0.2BB2>DI L0$6CC0D92>0B9=062BD90<62;28604EBB6>D *<0&5/*70 *,1*276010440-(&7-326 24D?BI0ED?=2D:?> 1.*8(0*6B:6C +6CD020%62CEB6=6>D CB.0D?0FB.0 *:>8<60'ED@ED0(?G6B0*E@@<:6C

MCF5206

Contextual Info: SECTION 6 BUS OPERATION The MCF5206 bus interface supports synchronous data transfers that can be terminated synchronously or asynchronously and burst or burst-inhibited between the MCF5206 and other devices in the system. This section describes the function of the bus, the signals that

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BD646F

Abstract: BD649F BD650F BD643F BD648F BD652F 651F
Contextual Info: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.

HEL35

Abstract: KEL35 KL35 MC100EL35
Contextual Info: MC10EL35, MC100EL35 5V ECL JK Flip-Flop The MC10EL/100EL35 is a high speed JK flip-flop. The J/K data enters the master portion of the flip-flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock. The reset pin is asynchronous and is activated with a logic

BdP 285

Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa

Contextual Info: L0D0D?0F.0?B00D?0C.0">@ED L0 ED@EDC0B.0D?0BC. L0+EB72460&?E>D L0%?G0E8C=0D?0F8F=0 B?7:<6 L0'?>0"C?<2D650(ED@ED )80%3-)50!)+/)05401022.,'%5,104 ,6<64?=E>:42D:?>C 2D24?= ">CDBE=6>D2D:?>00000 0+6B:6C B8C070C8F0)?:>D0?70%?25 ?>F6BD6BC 0+6B:6C062DEB6C02>506>67:DC

Contextual Info: L L L L L $?G0?CD BC60CE0?B0E-0'ED@EDC .:560 2>8600!>@ED 2B2<<6<0E>4D:?>0*G:D49 7EAK0D?05BK0'@6B2D:?> '80#2,'40').'/43030E11-*%#4*0/3 !>5ECDB:2<0?>DB?<C 24D?BI0ED?=2D:?> +6CD020%62CEB6=6>D (BCA020CEA0*6B:6C %?D?B0?>DB?<0*ICD6=C (B?46CC0?>DB?<60ED?=?D:F66

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

TFK 680 CNY 70

Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.