BD 646 Search Results

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BD646F

Abstract: BD649F BD650F BD643F BD648F BD652F 651F
Contextual Info: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.

A109

Abstract: MIL-C-50 MIL-T-10727
Contextual Info: 7 T H IS DRAWING 15 UNPUBLISHED. JÊ L RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. , 4 5 6 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS BD DESCRIPTION T REVISED PER EC 0G40-02S3-99 NYLON OR POLYESTER, FLAME RETARDANT, FILLED., BLACK. 2\ DD KB

L6503

Abstract: EC-IT8752 J3701 ASUS M50Vm realtek uwb C1136 IT8752 RX2023 C5814
Contextual Info: 5 4 3 2 1 M50Vm Montevina Block Diagram Penryn D D FAN + SENSOR CPU VCORE PAGE 50 PAGE 3,4,5 SYSTEM PWR PAGE 80 PAGE 81 VGA Daughter BD BAT & CHARGER CLOCK GEN ICS/9LPR363 FSB 1066MHz VGA VCORE PAGE 88 PAGE 29 Other PWR PAGE 82, 83, 84, 85, 90, 91, 92, 93, 94

Contextual Info: 7 DRAWING THIS MADE IN DRAWING THIRD ANGLE 15 U N P U B L I 5 H E D COPYRIGHT 5 6 3 4 2 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI S T LOC 19 BD RESERVED. REV I 5 I0N5 77 LTR ZONE DE5CR[RTION DATE REV PER EC 0020-1448-95

2-56UNC-2A

Contextual Info: 7 DRAWI NG MADE THIS IN THIRD DRAWI NG 0 ANGL E IS 6 4 5 2 3 PROJECTION UNPUBLI SHED. COPYRIGHT 19 RELEASED BY ANP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RI GHTS DI 5T LOC , 19 BD RESERVED. REV I 5 I 0 N 5 62 LTR ZONE DE5 CR I P T I O N

A109

Abstract: MIL-T-10727
Contextual Info: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. ALL FOR 3 2 , 19 PUBLICATION R IG H T S 4 5 6 REVI SI ONS DI ST LOC R ES ER V ED . BD DESCRIPTION T REV PER NYLON OR P O L Y E S T E R , FLANE GDA55 F I L D E D , B D A C K .

A109

Abstract: HD-20
Contextual Info: 7 T H I S DRAWING JÊL COPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. , 6 4 5 3 2 19 D I ST LOC ALL R IG H T S R ES E R V E D . R EV ISIO N S BD DESCRIPTION N R E V I S E D PER EC 0 G 4 0 - 0 2 6 7 - 9 9

50t65

Abstract: bd650 BD644
Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

Contextual Info: POWER TRANSISTORS GENERAL CASES: GENERAL TO- 3 F - 22 PURPOSE TRANSISTORS pt o t T r^ E S ^ W ! NPN PNP 115 : 2N 5874 : 2N 5874A 115 115 ! 2N 5874B 1 2N 5875 150 ! 2N 5875/1 150 150 : 2N 5875/2 150 1 2N 5876 ! 2N 5876A 150 150 ! 2N 5876B 150 : 2N 5877 150

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

philips BDV64A

Abstract: BDX67
Contextual Info: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

LTC1962EMS8-2.5

Abstract: LM136-2.5
Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%525525&33'5 $E#$E55 $F ED)5*)+ 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5$F)ED)5*)+5-E5*FD";0FED5

B66d

Abstract: B6650b
Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 !459A$%E&5255353'5 %E$%E55 %F ED)5*)+ 4 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5%F)ED)5*)+55

M68000

Abstract: M68030 MC68000 M68040 MC68008 MC68010 MC68020 MC68040 MC68EC030 68hc000 user manual
Contextual Info: MOTOROLA M68000 FAMILY Programmer’s Reference Manual Includes CPU32 Instructions MOTOROLA INC., 1992 TABLE OF CONTENTS Paragraph Number Title Page Number Section 1 Introduction 1.1 1.1.1 1.1.2 1.1.3 1.1.4 1.2 1.2.1 1.2.2 1.2.2.1 1.2.2.2 1.2.3 1.2.3.1

M68030

Abstract: 68EC030 mc68030 motorola 68020 manual M68000 M68040 MC68000 MC68008 MC68010 MC68020
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA M68000 FAMILY Programmer’s Reference Manual Freescale Semiconductor, Inc. Includes CPU32 Instructions MOTOROLA INC., 1992 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.

Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 459A$%E&555354'5 %E$%E55 %F ED)5*)+ 4 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5%F)ED)5*)+55

57c64

Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 459A$%E&55535244'5 %E$%E55 %F ED)5*)+ 4 5 5 5 6D5DEF,5$B-D)5.B/%0D5D)D5$)BC/D5 D1D$EBAF002535E)%D5%DF40D5$B-D)5A5FA5