27E SOT-23
Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
Text: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e
|
OCR Scan
|
BCW68G
OT-23
b5D1130
LS01130
27E SOT-23
27E 9 sot23
CK200
501MT
BCW68G
T092
|
PDF
|
rkm 3B
Abstract: SO2484 BCW67E
Text: TYPES* MAXIMUM RA TINGS Markmg PNP NPN ELECTRICAL CHARACTERISTICS AT 25 C P tot "cl30 “CEO “EBO lC V V V mA 50 45 50 45 50 45 50 45 50 45 50 45 30 i 25 30 25 30 25 30 25 30 ~ 25 30 25 5 5 5 5, 5 5 5 5 5 ~ 5 5 5 500 ~ 310 1 500 310 500 310 500 310 ' 500
|
Original
|
|
PDF
|
BCW68C
Abstract: BCW68G
Text: N BCW68G C E SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
BCW68G
OT-23
BCW68C
BCW68G
|
PDF
|
BCW68G
Abstract: No abstract text available
Text: BCW68G C E SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
|
Original
|
BCW68G
OT-23
BCW68G
|
PDF
|
BCW68G
Abstract: No abstract text available
Text: S e m i c o n d u c t o r 1" BCW68G SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted
|
OCR Scan
|
BCW68G
OT-23
BCW68G
|
PDF
|