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Infineon Technologies AG BCR108WE6327BTSA1 TRANS PREBIAS NPN 50V SOT323
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DigiKey	BCR108WE6327BTSA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BCR108WH6433XTMA1 TRANS PREBIAS NPN 50V SOT323
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DigiKey	BCR108WH6433XTMA1	Bulk			8,611	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now
Infineon Technologies AG BCR108WH6433XTMA1 TRANS PREBIAS NPN 50V SOT323
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DigiKey	BCR108WH6433XTMA1	Reel			40,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	BCR108WH6433XTMA1	Reel			40,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	BCR108WH6433XTMA1		200,000		10,527	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BCR108WH6433XTMA1		40,000		10,527	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BCR108WH6433XTMA1		240,000		1	1 $0.0335 10 $0.0335 100 $0.0315 1000 $0.0285 10000 $0.0285	Buy Now
EBV Elektronik	BCR108WH6433XTMA1			53 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BCR108WH6327XTSA1 TRANS PREBIAS NPN 50V SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR108WH6327XTSA1	Reel			36,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	BCR108WH6327XTSA1	Reel	30,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.02691	Buy Now
Verical	BCR108WH6327XTSA1		108,000		36,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BCR108WH6327XTSA1		27,000		10,527	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BCR108WH6327XTSA1		12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0274	Buy Now
Arrow Electronics	BCR108WH6327XTSA1		12,000	4 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0284	Buy Now
Rochester Electronics	BCR108WH6327XTSA1		41,264		1	1 $0.0335 10 $0.0335 100 $0.0315 1000 $0.0285 10000 $0.0285	Buy Now

EBV Elektronik	BCR108WH6327XTSA1		24,000	5 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BCR108WH6327XTSA1		18,000		1	1 - 10 - 100 - 1000 - 10000 $0.0581	Buy Now
Win Source Electronics	BCR108WH6327XTSA1		28,000			1 - 10 - 100 - 1000 $0.0582 10000 $0.0388	Buy Now
Rochester Electronics LLC BCR108WH6327XTSA1 TRANS PREBIAS NPN 50V SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BCR108WH6327XTSA1	Bulk			8,611	1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now

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BCR108W Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
BCR108W	Infineon Technologies	NPN Silicon Digital Transistor	Original	PDF
BCR108W	Infineon Technologies	Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V	Original	PDF
BCR108W	Infineon Technologies	R1=2.2 k ? R2=47 k ?	Original	PDF
BCR108W	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-323	Original	PDF
BCR108W	Infineon Technologies	Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R₁ (typ): 2.2 kOhm; R₂: 47.0 k?; h_FE (min): 70.0; V_{i (on)} (min): 0.5 2mA / 0.3V;	Original	PDF
BCR108W	Siemens	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)	Original	PDF
BCR108W	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BCR108WE6327	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3	Original	PDF
BCR108WE6327	Infineon Technologies	TRANS DIGITAL BJT NPN 50V 100MA 3SOT-323 T/R	Original	PDF
BCR108WE6327	Infineon Technologies	Digital Transistors - R1=2.2 kOhm, R2=47 kOhm	Original	PDF
BCR108WE6327BTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3	Original	PDF
BCR108WH6327	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3	Original	PDF
BCR108WH6327XTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3	Original	PDF
BCR108WH6433	Infineon Technologies	Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SOT323-3	Original	PDF

BCR108WH6433XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SOT323-3	Original	PDF

BCR108W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BCR108W Abstract: VSO05561 Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	PDF	BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561
BCR108W Abstract: VSO05561 Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	PDF	BCR108W VSO05561 EHA07184 OT323 Jul-16-2001 BCR108W VSO05561
bav99 Abstract: BAV-99S-E6327 bav99 infineon Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W	Original	PDF	BAV99. BAV99S BAV99 BAV99W BAV99U BAV99U BAV-99S-E6327 bav99 infineon
Untitled Abstract: No abstract text available Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see	Original	PDF	BCR141. BCR141S BCR141S: BCR141 BCR141W EHA07184 EHA07174 BCR141S
BAS16 Abstract: BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 4 D 2 3 D 3 D 1 2 1 2 Type BAS16 BAS16-02L* BAS16-02V BAS16-02W BAS16-03W BAS16-07L4* BAS16S BAS16U	Original	PDF	BAS16. BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U BAS16 BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W
marking code INFINEON Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W	Original	PDF	BBY53. BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W marking code INFINEON BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
Untitled Abstract: No abstract text available Text: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L	Original	PDF	BAS40. /BAS140W Q1011) BAS140W BAS40-02L BAS40 BAS40-04 BAS40-05 BAS40-05W BAS40-06
BAT15-02LRH Abstract: BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode Text: BAT15. Silicon Schottky Diodes • Low barrier type for DBS mixer applications up to 12 GHz, phase detectors and modulators • Low noise figure • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W	Original	PDF	BAT15. BAT15-02LRH BAT15-03W BAT15-04W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R BAT15-02LRH BAT15-04W BAT15 BAT15-03W BAT15-05W BAT15-099 BAT15-099LRH BAT15-099R RF schottky diode
bc817 Abstract: No abstract text available Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration	Original	PDF	BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W OT323 BC817-40 BC817-40W bc817
BCR108W Abstract: BCR142 BCR142F BCR142W BCW66 Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR142/W BCR142F C 3 R1 R2	Original	PDF	BCR142. BCR142/W BCR142F EHA07184 BCR142 BCR142W OT323 BCR108W BCR142 BCR142F BCR142W BCW66
marking code MS SOT323 Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860 Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)	Original	PDF	BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
BAS125 Abstract: BAS125-04W BAS125-05W BAS125-06W BAS125-07W MARKING 14S Text: BAS125. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101	Original	PDF	BAS125. BAS125-04W BAS125-05W BAS125-06W BAS125-07W OT323 BAS125 BAS125-04W BAS125-05W BAS125-06W BAS125-07W MARKING 14S
BCR133 Abstract: infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking Text: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package	Original	PDF	BCR133. BCR133S: BCR133/W BCR133S EHA07184 EHA07174 BCR133 OT363 BCR133 infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking
BCR135 Abstract: BCR108W BCR135F BCR135S BCR135W BCW66 Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see	Original	PDF	BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135 BCR108W BCR135F BCR135S BCR135W BCW66

BAS170W Abstract: BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04 Text: BAS70./BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • BAS70-04S: For orientation in reel see package information below • Pb-free RoHS compliant package1)	Original	PDF	BAS70. /BAS170W BAS70-04S: BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W BAS70-04S BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s SOt323 marking code 6X MARKING 77s BAS70 Series BAS70 BAS70-04
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
RF NPN POWER TRANSISTOR C 10-12 GHZ Abstract: BCR108W BFS17W Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free RoHS compliant 3 2 1 package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	PDF	BFS17W OT323 RF NPN POWER TRANSISTOR C 10-12 GHZ BCR108W BFS17W
Untitled Abstract: No abstract text available Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see	Original	PDF	BCR119. BCR119S: BCR119/F/W BCR119S EHA07264 EHA07265 BCR119 BCR119F
Untitled Abstract: No abstract text available Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR142 BCR142W C 3 R1 R2 1 B	Original	PDF	BCR142. BCR142 BCR142W EHA07184 OT323
Untitled Abstract: No abstract text available Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see	Original	PDF	BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F
bav99 Abstract: A7s SOT23 SOT-23 marking A7s Text: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W	Original	PDF	BAV99. BAV99S BAV99 BAV99W BAV99S BAV99U bav99 A7s SOT23 SOT-23 marking A7s
Untitled Abstract: No abstract text available Text: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2 =47 kΩ • BCR148S: Two internally isolated transistors with good matching in one multichip package • BCR148S: For orientation in reel see	Original	PDF	BCR148. BCR148S: BCR148 BCR148W BCR148S EHA07184 EHA07174
Untitled Abstract: No abstract text available Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2 =47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see	Original	PDF	BCR135. BCR135S: BCR135 BCR135W BCR135S EHA07184 EHA07174
BCR553 Abstract: BCR108W sot323 BCR133 SOT-23 cimax Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics TA=25°C Case j. /x VCEO V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W	OCR Scan	PDF	10mA/5V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR553 BCR108W sot323 SOT-23 cimax

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BCR108W Search Results

BCR108W Price and Stock

Infineon Technologies AG BCR108WE6327BTSA1

Rochester Electronics LLC BCR108WH6433XTMA1

Infineon Technologies AG BCR108WH6433XTMA1

Infineon Technologies AG BCR108WH6327XTSA1

Rochester Electronics LLC BCR108WH6327XTSA1

BCR108W Datasheets (15)

BCR108W Datasheets Context Search

BCR108W

BCR108W

bav99

Untitled

BAS16

marking code INFINEON

Untitled

BAT15-02LRH

bc817

BCR108W

marking code MS SOT323

BAS125

BCR133

BCR135

BAS170W

smd code book

RF NPN POWER TRANSISTOR C 10-12 GHZ

Untitled

Untitled

Untitled

bav99

Untitled

Untitled

BCR553