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    BC817 PHILIPS Search Results

    BC817 PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10091790-002LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-003LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.625" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091790-003LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-001LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions
    10091791-002LF Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. Visit Amphenol Communications Solutions

    BC817 PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    15002

    Abstract: Transistor BC817 transistor 6D sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 12 1999 Jun 01 Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING


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    PDF M3D088 BC817 BC807. BC817-25 BC817-40 15002/03/pp8 15002 Transistor BC817 transistor 6D sot23

    BC817-40

    Abstract: BC807 BC817 BC817-16 BC817-25 marking 6b philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BC817 NPN general purpose transistor Product specification Supersedes data of 1999 Jun 01 2004 Jan 05 Philips Semiconductors Product specification NPN general purpose transistor BC817 PINNING FEATURES • Collector current capability IC = 500 mA


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    PDF BC817 BC807. BC817-16 BC817-25 BC817-40 SCA75 R75/04/pp8 BC817-40 BC807 BC817 BC817-16 BC817-25 marking 6b philips

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A

    2N904

    Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2N904 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN

    SO45

    Abstract: 2N243 2N2247 2SC1072 LOW-POWER SILICON NPN 2N472 2N2897 BSY10
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 SO45 2N243 2N2247 2SC1072 LOW-POWER SILICON NPN 2N472 2N2897 BSY10

    transistor 6Cp

    Abstract: 6Bp transistor transistor 6bp bc817 6Bp BC807 BC808 BC817 BC817-16 BC817-25 BC817-40
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


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    PDF M3D088 BC817; BC818 BC807 BC808. SCA53 117047/00/02/pp8 transistor 6Cp 6Bp transistor transistor 6bp bc817 6Bp BC808 BC817 BC817-16 BC817-25 BC817-40

    c33725

    Abstract: c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number Package PNP complement Philips


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    PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W c33725 c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet

    power amplifier circuit diagram with pcb layout

    Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
    Text: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are


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    PDF BFG480W BFG480W, BFG400 MGS765 MGS766 power amplifier circuit diagram with pcb layout PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db

    high Power audio amplifier btl class

    Abstract: high power class d audio 200 W CLASS D AUDIO AMPLIFIER AN10239 CLASS D AUDIO AMPLIFIER PHP45NQ11T audio amplifier POWER TRANSISTORS high power class d class d amplifier theory audio power amplifiers with transistors
    Text: AN10239_1 High Power Discrete Class D Audio Amplifiers Application note High Power Discrete Class D Audio Amplifiers For high output power, discrete Class D audio amplifiers are the most cost-effective solution. This application note gives an overview of the global design and the semiconductors used in a discrete Class D audio amplifier operating


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    PDF AN10239 BC817 high Power audio amplifier btl class high power class d audio 200 W CLASS D AUDIO AMPLIFIER CLASS D AUDIO AMPLIFIER PHP45NQ11T audio amplifier POWER TRANSISTORS high power class d class d amplifier theory audio power amplifiers with transistors

    16w SOT23

    Abstract: sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617
    Text: Philips Semiconductors Small-signal Transistors Selection guide SURFACE-MOUNT DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE 2PC4081 SC-70 40 100


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    PDF 2PC4081 SC-70 2PA1576 2PC4081Q 2PA1576Q 2PC4081R 2PA1576R 2PC4081S 16w SOT23 sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617

    BF914

    Abstract: BZV80 PXTA14 PMBTA64 PMBFJ177 BB219 PMBFJ174 BST60 PMBTA14 PMBT4401
    Text: Surface Mount Transistors & Diodes Type Index Typ« Pag* ivi» Rage type Pago Type Page Type ' Page lype Page BA314L BA423L BA582 BA682 BA683 183 175 175 175 175 BC808-25 BC808-40 BC817-16 BC817-25 BC817-40 144 144 140 140 140 BCV72 BCW29 BCW30 BCW31 BCW32


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    PDF BA314L BA423L BA582 BA682 BA683 BAS16 BAS17 BAS20 BAS21 BAS28 BF914 BZV80 PXTA14 PMBTA64 PMBFJ177 BB219 PMBFJ174 BST60 PMBTA14 PMBT4401

    transistor 6Cp

    Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
    Text: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


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    PDF BC817; BC818 BC807 BC808. BC817 BC817-16 BC817-25 BC817-40 transistor 6Cp 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp

    6C TRANSISTOR MARKING

    Abstract: transistor marking 6c transistor 6D bc817 philips BC817 transistor 6D sot23 MARKING CODE 16 transistor sot23 BC817-40 BC817-25-6B MARKING 16 transistor sot23
    Text: Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BC817 BC807. BC817-25 BC817-16 BC817-40 BC817-40. 6C TRANSISTOR MARKING transistor marking 6c transistor 6D bc817 philips transistor 6D sot23 MARKING CODE 16 transistor sot23 BC817-25-6B MARKING 16 transistor sot23

    transistor 6Cp

    Abstract: transistor 6bp bc817 6Bp 6Bp transistor bc817 marking 6ap marking 6CP 6Cp transistor bc817 philips 8H721
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC817; BC818 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector General purpose switching and amplification.


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    PDF BC817; BC818 BC807 BC808. BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 transistor 6Cp transistor 6bp bc817 6Bp 6Bp transistor marking 6ap marking 6CP 6Cp transistor bc817 philips 8H721

    TYP 513 309

    Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
    Text: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250


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    PDF BC817 BC818 BC846 BC847 BC848 BC868 BCP54 BCP55 BCP56 BCP68 TYP 513 309 philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE » • ^^53^31 00155°^ 3 — BC817 BC818 T -^ 9 -1 7 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope for use in driver and output stages o f audio amplifiers in thick and thin-film hybrid circuits.


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    PDF BC817 BC818 OT-23 BC807; BC808; 001SS15

    code marking 6Cp sot-23

    Abstract: F1010Z bc817 6Bp marking 6ap 6bp marking code marking 6Bp BC818-16 marking code 6Cp BC808 BC817-25
    Text: 71]iOA2b 0 0 L Ö 4 1 2 <^2 • P H I N BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits. P-N-P complements are BC807; R and BC808; R respectively.


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    PDF 7110fl5b BC817 BC818 OT-23 BC807; BC808; BC817 BC818 OT-23. MBB012 code marking 6Cp sot-23 F1010Z bc817 6Bp marking 6ap 6bp marking code marking 6Bp BC818-16 marking code 6Cp BC808 BC817-25

    BC808

    Abstract: BC817R code marking 5Cp sot-23 BC807 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC817
    Text: 7 1 1 0 0 5 b OGbflMQS 752 H P H I N BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package for use in driver and output stages of aufio amplifiers in thick and thin-film hybrid circuits. N-P-N complements are BC817; R and BC818;R respectively.


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    PDF 711005b 00bfl405 BC807 BC808 OT-23 BC817; BC818 BC807 BC808 OT-23. BC817R code marking 5Cp sot-23 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC817

    code marking 6Cp sot-23

    Abstract: marking 6ap BC817-40 marking 6CP BC807 BC808 BC817 BC817-16 BC817-25 BC818
    Text: • bbS3T31 0D24M4fc. EDI H A P X N AUER PHIL I P S / D I S C R E T E BC817 BC818 b?E 3> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in d river and o u tp u t stages o f audio a m plifiers in th ic k and th in -film h y b rid circu its.


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    PDF 0D24M4fc. BC817 BC818 OT-23 BC807; BC808; BC817 OT-23. 35MHz code marking 6Cp sot-23 marking 6ap BC817-40 marking 6CP BC807 BC808 BC817-16 BC817-25 BC818

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 002444b EOT * A P X N AUER PHILIPS/DISCRETE b?E B C 817 B C 818 D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.


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    PDF 002444b OT-23 BC807; BC808; BC817 BC818 BC817; BC817-16 BC818-16

    BC818-16R

    Abstract: BC817-16R sot-23 npn marking code cr 48mT C817 BC807 BC808 BC817 BC817-16 BC818
    Text: N AMER PHILIPS/DISCRETE OLE D • bhS3T3]i OOISSGT 3 ■■ BC8Ï7 BC818 T -^ 9 -1 7 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.


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    PDF BC817 BC818 OT-23 BC807; BC808; BC817 35MHz BC818-16R BC817-16R sot-23 npn marking code cr 48mT C817 BC807 BC808 BC817-16 BC818

    amplifier TRANSISTOR 12 GHZ

    Abstract: BFG11/ON961 transistor amplifier 3 ghz 7.1 power amplifier circuit diagram BFG540 bfg540 s-parameter Low frequency amplifier V 12v philips printed circuit board design transistor r06 BFG11
    Text: Philips Semiconductors Power amplifier for 1.9 GHz at 3 V Application report In this note some results of measurements are described performed on a RF amplifier for 1.9GHz applications. The amplifier is build up from three bipolar transistors, the broadband


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    PDF BFG540/X BFG10/X BFG11/X. BFG540, BFG10 BFG11 26dBm, 1900MHz. BFG505 amplifier TRANSISTOR 12 GHZ BFG11/ON961 transistor amplifier 3 ghz 7.1 power amplifier circuit diagram BFG540 bfg540 s-parameter Low frequency amplifier V 12v philips printed circuit board design transistor r06

    b050 TRANSISTOR

    Abstract: bipolar transistor ghz s-parameter 7.1 power amplifier circuit diagram BFG10 Transistor BC817 power amplifier circuit diagram at c15 100 3p9 amplifier TRANSISTOR 12 GHZ BC817 BFG11
    Text: Philips Semiconductors Power amplifier for 1.9 GHz at 3 V Application report In this note some results of measurements are described performed on a RF amplifier for 1.9GHz applications. The amplifier is build up from three bipolar transistors, the broadband


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    PDF BFG540/X BFG10/X BFG11/X. BFG540, BFG10 BFG11 26dBm, 1900MHz. BFG505 b050 TRANSISTOR bipolar transistor ghz s-parameter 7.1 power amplifier circuit diagram Transistor BC817 power amplifier circuit diagram at c15 100 3p9 amplifier TRANSISTOR 12 GHZ BC817

    trw RF POWER TRANSISTOR

    Abstract: BLT80 bfg540 s-parameter BLT81 trw rf transistor trw rf semiconductors npn power amplifier circuit BC807 BC817 BFG540
    Text: Philips Semiconductors Power amplifier for 900 MHz at 6 V Application report POWER AMPLIFIER for 900 MHz at 6V In this note some results of measurements are described performed on a RF amplifier for 900 MHz applications. The amplifier is able to deliver 1.2 W RF output power with an efficiency


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    PDF BFG540/x BLT80 BLT81. BFG540, BLT81 900MHz. BLT81 trw RF POWER TRANSISTOR bfg540 s-parameter trw rf transistor trw rf semiconductors npn power amplifier circuit BC807 BC817 BFG540