BC 390 TRANSISTOR Search Results

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

Contextual Info: 5SC » • ÛH3SbOS QÜ0MSS4 T ■ S I E 6 r NPN Silicon AF Transistors - 25C BCX 22 BCX 24 0 4 7 *5 ^ SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case. These transistors

transistors BC 458

Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415
Contextual Info: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)

AAES

Abstract: V3061
Contextual Info: tì I . 2SC D • û23Sfc.0S GD0425Ô 7 H S I E â Z5C U*t258 PNP Silicon AF Transistors - BCX23 BCX 3 9 SIEMENS AKTIENGESELLSCHAF - — — =- -— BCX 2 3 and BCX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case

hFE-1000 BC

Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
Contextual Info: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879

bc 170

Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage

c732

Abstract: 000M2S4 BCX22 BCX24 BCX94 Q62702-C732 Q62702-C750
Contextual Info: 2SC » • ÛH3SbOS 0004554 T ■ S I E 6 r NPN Silicon AF Transistors - -r-an-ri BCX 22 BCX 24 25C 0 4 7 5 4 0 - B C X 94 SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal

Y59 r 120

Contextual Info: N AUER PHILIPS/DISCRETE fe.'lE D bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case, for use in ampli­ fier and switching applications. QUICK REFERENCE DATA

transistor bc 132

Abstract: B1188 BC transistor series
Contextual Info: 2SB1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62)package • package marking: 2SB1188; BC^, where ★ is hFE code 2SB1188 (MPT3) • collector power dissipation, P c = 2 W, when mounted on 40 x 40 x 0.7 mm

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

BCY59C

Abstract: bcy59 ty 90-BC
Contextual Info: BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 m etal package w ith the co lle c to r connected to the case, fo r use in a m p li­ fie r and sw itching applications. Q U IC K R E F E R E N C E D A T A BCY58 BC Y 59 v CEO max.

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

bf679t

Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
Contextual Info: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages

2sb1240

Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05

BCY59

Abstract: bcv59 BCY58 BCY58X BCY58IX BCY59IX 71519 BCY59-10 BCY58VII BCY58VIII
Contextual Info: N AUER PHILIPS/DISCRETE b*lE » • bbSB'iBl □ 0E7fc>E3 E45 HiAPX II BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case, fo r use in ampli­ fie r and switching applications.

2sd2006

Abstract: TRANSISTOR "BC 371" TRANSISTOR BC 373 transistor 2SD2006 2SB1330 transistor BC SERIES Q 371 Transistor
Contextual Info: 2SD2006 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high breakdown voltage: BVq ^ q = 80 V 2SD2006 (MRT) 6 5±0 2 • large current capacity, lc = 700 mA • complementary pair with 2SB1330 1.0 Applications • R medium power amplifier

Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,

2N4401 EBC

Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K
Contextual Info: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.

Contextual Info: Bill of Materials for the NCP1255PRNGEVB Evaluation Board Substitution Allowed Lead Free Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number R1 R2a, R2b R3 R4b 1 2 1 2.2 k 1.5 ohm 0,5 W 1k - 1% 1% 1% - SMD0805 SMD2510

d1189f

Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Contextual Info: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)

2SD2212 REEL

Abstract: 2SD1898 marking 2sd1664 2SD1834
Contextual Info: 2 W S O T- 8 9 B I P O L A R T R A N S I S T O R S • • • SQP £ each 0.1 0.5 0.1 0.5 0.1 0.5 0.5 0.1 0.20 POA 0.10 0.14 0.12 0.13 0.16 0.18 POA 0.5 0.1 0.5 0.5 0.5 0.13 0.13 0.15 0.18 POA 0.5 0.5 0.16 POA 0.01 POA 0.5 1.0 1.0 1.0 0.13 0.18 POA 0.17 SC-62 SOT-89 DIMENSIONS