BC 104 TRANSISTOR Search Results

ZO 109

Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Contextual Info: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.

transistors BC 557C

Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
Contextual Info: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

ic 546

Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
Contextual Info: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

BC860W

Contextual Info: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case

Contextual Info: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 1±0.1 Power dissipation – Verlustleistung 200 mW Plastic case

transistors BC 23

Abstract: 849B 847C 848B
Contextual Info: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

BC 620

Abstract: 847BW 846BW 850CW
Contextual Info: BC 846W . BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW

856B

Abstract: 858C
Contextual Info: BC 856 . BC 860 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code SOT-23 TO-236 Weight approx. – Gewicht ca.

Contextual Info: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1

H12E

Contextual Info: BC 857BL3, BC 858BL3 PNP Silicon AF Transistors Preliminary data
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
Complementary types: BC 847BL3, 2 BC 848BL3 NPN Type Marking Pin Configuration

transistor Bc 580

Abstract: TRANSISTOR BC 450 pnp transistor BC 660
Contextual Info: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data
For AF input stage and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration

BC478

Abstract: BC479 BC 195 TRANSISTORS BC477
Contextual Info: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver

bc 471

Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Contextual Info: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN

sot-23 MARKING CODE 1Gs

Abstract: bc 846 BC850 BC846
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,

BC 418

Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
Contextual Info: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.

kc 3229

Abstract: BC 477 G3229 BC 195 TRANSISTORS BC477 G-323 G-3229 BC479 g323
Contextual Info: BC 477 BC 478 BC 479 SILICON PLANAR PNP LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 477, BC 478 and BC 479 are silicon planar epitaxial PNP transistors in TO-18 metal case. The BC 477 is a high voltage type designed fo r use in audio am plifiers or driver

transistor bc 144

Abstract: TRANSISTOR
Contextual Info: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)

transistor BC 549

Abstract: transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b TFK BC BC549 BC550 TRANSISTOR BC 135 BE550 TRANSISTOR BC 620
Contextual Info: BC 549 - BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Rauscharme V orstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

bc 339

Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Contextual Info: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,

BC 511

Abstract: Q62702-C2295 MARKING 3FS
Contextual Info: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,

857T

Abstract: 857BT
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

transistor af 178

Abstract: bc 162 transistor TRANSISTOR BC 157 BC179 BC179 transistor bc 106 transistor TO-18 BC-177 pnp transistor Q62702-C141 BG177 bc 103 transistor
Contextual Info: 2SC ì> • 023SbOS O D Q m i S 7 H S I E 6 — ¿p c xj*tLL^ D '*y * <Ky PNP Silicon Transistors * jO " BC 177 -SIEMENS AKTIENGESELLSCHAF - BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are