BBS3L31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE E5E D • b b S B ' m 002051=5 5 ■ BUK542-50A BUK542-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

bfr93

Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
Contextual Info: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,

Contextual Info: N AUER PHILIPS/DISCRETE hfaSB^l 0Q1A717 3 • 2SE D BUS12 BUS12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.