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    Nexperia BAS56,215

    DIODE ARRAY GP 60V 200MA SOT143B
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    DigiKey BAS56,215 Digi-Reel 11,308 1
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    Nexperia BAS56,235

    DIODE ARRAY GP 60V 200MA SOT143B
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    DigiKey BAS56,235 Digi-Reel 10,046 1
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    Murata Manufacturing Co Ltd LQW2BAS56NG00L

    FIXED IND 56NH 500MA 340MOHM SMD
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    Murata Manufacturing Co Ltd LQW2BAS56NJ00L

    FIXED IND 56NH 500MA 340MOHM SMD
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    Central Semiconductor Corp BAS56-BK

    DIODE ARRAY GP 60V 200MA SOT143
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    BAS56 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS56 Central Semiconductor DUAL HIGH CURRENT SWITCHING DIODE Original PDF
    BAS56 Kexin High Speed Double Diode Original PDF
    BAS56 NXP Semiconductors BAS56 - High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V Original PDF
    BAS56 Philips Semiconductors High-speed double diode Original PDF
    BAS56 Philips Semiconductors Ultra High Speed Diode Original PDF
    BAS56 TY Semiconductor High Speed Double Diode - SOT-143 Original PDF
    BAS56 Central Semiconductor DUAL HIGH CURRENT SWITCHING DIODE Scan PDF
    BAS56 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAS56 Philips Semiconductors High-speed double diode Scan PDF
    BAS56,215 NXP Semiconductors BAS56 - DIODE 0.2 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode Original PDF
    BAS56,215 NXP Semiconductors High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BAS56,235 NXP Semiconductors BAS56 - DIODE 0.2 A, 60 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode Original PDF
    BAS56,235 NXP Semiconductors High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BAS56 BK Central Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SWITCHING DUAL SOT143 Original PDF
    BAS56 BK PBFREE Central Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SWITCHING DUAL SOT143 Original PDF
    BAS56 TR Central Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SWITCHING DUAL SOT143 Original PDF
    BAS56T/R NXP Semiconductors High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V Original PDF
    BAS56TR Philips Semiconductors High-speed double diode Original PDF
    BAS56T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BAS56 TR PBFREE Central Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SWITCHING DUAL SOT143 Original PDF

    BAS56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS56

    Abstract: No abstract text available
    Text: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed


    Original
    PDF BAS56 OT-143 150oC 200mA 500mA 400mA, 100ns BAS56

    code l51

    Abstract: MARKING CODE R7 DIODE "wl5" WL5 SOT-143 BAS56 L51 MARKING
    Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


    Original
    PDF BAS56 BAS56 OT-143 200mA 500mA 400mA, 100ns code l51 MARKING CODE R7 DIODE "wl5" WL5 SOT-143 L51 MARKING

    SOT143 Marking l51

    Abstract: code l51 L51 transistor marking sot-143 BAS56
    Text: Central BAS56 TM Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an


    Original
    PDF BAS56 OT-143 35unless 200mA 500mA 400mA, SOT143 Marking l51 code l51 L51 transistor marking sot-143 BAS56

    Untitled

    Abstract: No abstract text available
    Text: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed


    Original
    PDF BAS56 OT-143 150oC 200mA 500mA 400mA, 100ns

    BAS56

    Abstract: code l51
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D070 BAS56 High-speed double diode Product data sheet Supersedes data of April 1996 1996 Sep 10 NXP Semiconductors Product data sheet High-speed double diode BAS56 PINNING FEATURES DESCRIPTION • Small plastic SMD package


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    PDF M3D070 BAS56 BAS56 OT143 code l51

    Untitled

    Abstract: No abstract text available
    Text: BAS56 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current200m V(RRM) (V) Rep.Pk.Rev. Voltage60 t(rr) Max.(s) Rev. Rec. Time6.0n @I(F) (A) (Test Condition)400m


    Original
    PDF BAS56 Current200m Voltage60 Current100n StyleSOT-143

    code l51

    Abstract: L51 MARKING BAS56
    Text: Central BAS56 TM Semiconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with


    Original
    PDF BAS56 OT-143 200mA 500mA 400mA, 100ns 13-November code l51 L51 MARKING

    BAS56

    Abstract: smd marking l5
    Text: BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not


    Original
    PDF BAS56 OT143B AEC-Q101 BAS56 smd marking l5

    JTp smd diode

    Abstract: smd diode marking T1 diode smd diode marking Ja smd diode MS 20 capacitance diode marking T1 diode in 400 smd diode j BAS56 smd diode S
    Text: Diodes SMD Type High-Speed Double Diode BAS56 Unit: mm Features Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage:max. 60 V Repetitive peak reverse voltage:max. 60 V Repetitive peak forward current:max. 600 mA. Absolute Maximum Ratings Ta = 25


    Original
    PDF BAS56 JTp smd diode smd diode marking T1 diode smd diode marking Ja smd diode MS 20 capacitance diode marking T1 diode in 400 smd diode j BAS56 smd diode S

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAS56 Unit: mm Features Small plastic SMD package High switching speed: max. 6 ns Continuous reverse voltage:max. 60 V Repetitive peak reverse voltage:max. 60 V Repetitive peak forward current:max. 600 mA. Absolute Maximum Ratings Ta = 25


    Original
    PDF BAS56

    smd diode marking code L51

    Abstract: sot143 marking code JTp code l51 MAM059 BAS56 Double high-speed switching diode 134 B "360 SMD"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS56 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two highspeed switching diodes fabricated in


    Original
    PDF M3D070 BAS56 BAS56 OT143 smd diode marking code L51 sot143 marking code JTp code l51 MAM059 Double high-speed switching diode 134 B "360 SMD"

    SOT143 DUAL DIODE

    Abstract: BAS56
    Text: BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


    Original
    PDF BAS56 BAS56 OT-143 200mA 500mA 400mA, 100ns SOT143 DUAL DIODE

    smd diode marking code L51

    Abstract: A2 marking diode SOT143 code l51 sot143 marking code JTp A2 DIODE SMD CODE MARKING BAS56 MAM059
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D070 BAS56 High-speed double diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors Product specification High-speed double diode


    Original
    PDF M3D070 BAS56 BAS56 OT143 smd diode marking code L51 A2 marking diode SOT143 code l51 sot143 marking code JTp A2 DIODE SMD CODE MARKING MAM059

    BAS56

    Abstract: code l51
    Text: Central BAS56 S e m ic o n d u c to r C o rp . DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount


    OCR Scan
    PDF BAS56 200mA 500mA 400mA, 100ns BAS56 OT-143 code l51

    1N4148 SOD-80

    Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
    Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


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    PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A 1N4148 SOD-80 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6

    Js SMD MARKING CODE SOT23

    Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
    Text: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003


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    PDF BAS28 BAS56 CLL914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A Js SMD MARKING CODE SOT23 SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm

    Untitled

    Abstract: No abstract text available
    Text: BAS56 Central" sem iconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE % SOT-143 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount


    OCR Scan
    PDF BAS56 OT-143 4000tp 200mA 500mA 400mA, 500S2

    BAW62 SMD

    Abstract: BAS56 "parasitic capacitance" smd BAW62 NS156 diode fr 153
    Text: • bbSa1^ ! 00242cì7 TGI « A P X N AMER PHILIPS/DISCRETE BAS56 b7E P A _ SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE T he BAS56 consists o f tw o separate planar ep itaxia l u ltra-high speed, high conductance diodes in one m ic ro m in ia tu re plastic envelope intended fo r surface m ounting.


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    PDF BAS56 BAS56 OT-143. bbS3T31 002M300 BAW62 BAW62 SMD "parasitic capacitance" smd BAW62 NS156 diode fr 153

    Untitled

    Abstract: No abstract text available
    Text: Central BAS56 Semiconductor Corp. DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 con­ sists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an


    OCR Scan
    PDF BAS56 OT-143 CPD41 OT-143

    Philips fr 153 30

    Abstract: No abstract text available
    Text: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.


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    PDF bbS3T31 BAS56 BAS56 1Z73J12 BAW62 Philips fr 153 30

    jtp sot 143

    Abstract: smd diode marking HA A2 diode smd BAS56 marking code diode Eb SMD smd code JTP 00 diode
    Text: Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two high­ speed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD


    OCR Scan
    PDF BAS56 BAS56 OT143 MAM059 711002b jtp sot 143 smd diode marking HA A2 diode smd marking code diode Eb SMD smd code JTP 00 diode

    diode MARKING CODE 107

    Abstract: No abstract text available
    Text: Central" BAS56 Sem iconductor Corp. DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with


    OCR Scan
    PDF BAS56 OT-143 CPD41, 13-November OT-143 diode MARKING CODE 107

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two high­ speed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD


    OCR Scan
    PDF BAS56 BAS56 M8H283

    Untitled

    Abstract: No abstract text available
    Text: Central" BAS56 S e m ic o n d u c to r C o rp . DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount


    OCR Scan
    PDF BAS56 OT-143 200mA 500mA 400mA, 500i2 100ns