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    BAS282 Price and Stock

    Rochester Electronics LLC BAS28,215

    DIODE ARRAY GP 75V 215MA SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAS28,215 Bulk 8,768
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    Vishay Semiconductors BAS282-GS18

    DIODE SCHOT 50V 30MA SOD80
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAS282-GS18 Reel 10,000
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    Vishay Semiconductors BAS282-GS08

    DIODE SCHOT 50V 30MA SOD80
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAS282-GS08 Reel 12,500
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    Nexperia BAS28215

    Small Signal Switching Diode, Dual Parallel, 85 V, 215 mA, 1.25 V, 4 ns, 4 A, SOT-143B, 4 Pins - Tape and Reel (Alt: BAS28,215)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BAS28215 Reel 123,000 6 Weeks 3,000
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    BAS28215 Reel 6 Weeks 3,000
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    Avnet Asia BAS28215 120,000 6 Weeks 24,000
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    Vishay Intertechnologies BAS282-GS18

    SCHOTTKY DIODE SOD80 QUADROMELF - Tape and Reel (Alt: BAS282-GS18)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BAS282-GS18 Reel 9 Weeks 10,000
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    EBV Elektronik BAS282-GS18 10 Weeks 10,000
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    Find more BAS282 price and stock on Findchips.com

    BAS282 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS282 Vishay Intertechnology Schottky Barrier Diode Original PDF
    BAS282 Vishay Semiconductors Small SIgnal Schottky Barrier Diodes Original PDF
    BAS28,215 NXP Semiconductors High-speed double diode - Cd max.: 1.5 pF; Configuration: dual isolated ; IF max: 215 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BAS28,215 NXP Semiconductors BAS28 - DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode Original PDF
    BAS28,235 NXP Semiconductors High-speed double diode - Cd max.: 1.5 pF; Configuration: dual isolated ; IF max: 215 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BAS28,235 NXP Semiconductors BAS28 - DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4, Signal Diode Original PDF
    BAS282-GS08 Vishay Intertechnology Small SIgnal Schottky Barrier Diode Original PDF
    BAS282-GS18 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY SOD80 Original PDF

    BAS282 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAS281, BAS282, BAS283 www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • Integrated discharge protection ring against static • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified


    Original     		PDF BAS281, BAS282, BAS283 AEC-Q101 OD-80 GS18/10K 10K/box GS08/2 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: BAS281, BAS282, BAS283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified


    Original     		PDF BAS281, BAS282, BAS283 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 18-Jul-08

    BAS283-GS18

    Abstract: No abstract text available
    Text: BAS281, BAS282, BAS283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified


    Original     		PDF BAS281, BAS282, BAS283 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 2011/65/EU BAS283-GS18

    BAS281

    Abstract: No abstract text available
    Text: BAS281, BAS282, BAS283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified


    Original     		PDF BAS281, BAS282, BAS283 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 11-Mar-11 BAS281

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    1N4148 SOD-80 ST

    Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
    Text: V i s h ay In t e r t e c h n o l o g y, In c . Diodes -Focus Products for Multi-Market Applications AND TEC I INNOVAT O L OGY Small-Signal Schottky and Switching Diodes N HN DIODES O 19 62-2012 Available in Surface-Mount and Leaded Packages FEATURED PACKAGES


    Original     		PDF OD-523 OD-323 OD-123 DO-35 VMN-SG2114-1202 1N4148 SOD-80 ST 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114

    Untitled

    Abstract: No abstract text available
    Text: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009


    Original     		PDF BAS281 OD-80) BAS282 BAS283 08-Apr-05

    bat41 BAT46

    Abstract: C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V
    Text: S OD 5 2 3 S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 LL P 7 5 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal Schottky diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .


    Original     		PDF OD523 OD323 OD123 SD103CWS-V SD103CW-V VMN-SG2109-0704 bat41 BAT46 C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V

    85500 transistor

    Abstract: BAS281 BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80
    Text: BAS281 / 282 / 283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component


    Original     		PDF BAS281 2002/95/EC 2002/96/EC 18-Jul-08 85500 transistor BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80

    85500 transistor

    Abstract: K 85500 BAS281 BAS282 BAS283
    Text: BAS281.BAS283 Vishay Telefunken Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12009 Applications General purpose and switching


    Original     		PDF BAS281. BAS283 BAS281 BAS282 D-74025 01-Apr-99 85500 transistor K 85500 BAS281 BAS282 BAS283

    MMBT3906R

    Abstract: DDTC115TUA DDTC144VCA DDTA124XCA DDTC124XUA DDTC143TCA BC856BW
    Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: 8/26/02 10/1/02 Alert Category: Discrete Semiconductor DCS/PCN-1017 Alert Type: PCN #: Assembly Process PCN #:2002-1017 TITLE Bond Wire Size Change IMPACT None, No Form, Fit or Function Change


    Original     		PDF DCS/PCN-1017 com/datasheets/ds30097 MMDT2222A BAS70W-06 BSS138 DDTC115TUA MMBT2222A MMDT2227 BAS70WS BSS138DW MMBT3906R DDTC115TUA DDTC144VCA DDTA124XCA DDTC124XUA DDTC143TCA BC856BW

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    BAS83

    Abstract: DL4007 ALL4001G DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 LL4001G
    Text: Leadless Surface Mount Rectifiers Max. Average Rectified Current CrossReference Part No. DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 DL4007 LL4001G LL4002G LL4003G LL4004G LL4005G LL4006G LL4007G LL4001G LL4002G LL4003G LL4004G LL4005G LL4006G LL4007G SM4001


    Original     		PDF -65oC 150oC DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 DL4007 LL4001G BAS83 DL4007 ALL4001G DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 LL4001G

    85500 transistor

    Abstract: BAS281 BAS282 BAS283
    Text: BAS281.BAS283 Vishay Telefunken Small SIgnal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12009 Applications General purpose and switching Schottky barrier diode


    Original     		PDF BAS281. BAS283 BAS281 BAS282 BAS281 BAS282 BAS283 D-74025 31-Jan-01 85500 transistor

    BAS282

    Abstract: BAS282-GS08 BAS283 BAS281 BAS281-GS08 schottky DO-213
    Text: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009


    Original     		PDF BAS281 OD-80) D-74025 03-Mar-04 BAS282 BAS282-GS08 BAS283 BAS281-GS08 schottky DO-213

    ph 4148 zener diode

    Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vHN-db1102-0407 ph 4148 zener diode ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352

    sot363

    Abstract: SOT-363 662 BSS84DW-13-F AZ23C20W sot-363 651 sot-363 702 MMBZ5237BTS bzx84c5v1t sot-523 mmdt2227
    Text: PRODUCT CHANGE NOTICE Contact Date: June 29, 2007 Implementation Date: October 1, 2007 Alert Category: Discrete Semiconductor DCS/PCN-1078 Rev 1 Alert Type: PCN #: Encapsulate Change PCN #: 1078, Rev 1 TITLE Conversion of SOT-363, SOT-523, SOT-563, SC59 and SC70 Packages to Green Encapsulate molding compound


    Original     		PDF DCS/PCN-1078 OT-363, OT-523, OT-563, halogC20V8-7 TLC363C20V8-7-F TLC363C5V5-13 TLC363C5V5-7 TLC363C5V5-7-F TLC363C6V4-13 sot363 SOT-363 662 BSS84DW-13-F AZ23C20W sot-363 651 sot-363 702 MMBZ5237BTS bzx84c5v1t sot-523 mmdt2227

    BAS281

    Abstract: BAS281-GS18 85500 transistor BAS281-GS08 BAS282 BAS283
    Text: BAS281 / 282 / 283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component


    Original     		PDF BAS281 2002/95/EC 2002/96/EC 08-Apr-05 BAS281-GS18 85500 transistor BAS281-GS08 BAS282 BAS283

    85500 transistor

    Abstract: BAS281 BAS282 BAS283
    Text: BAS281.BAS283 Vishay Semiconductors Small SIgnal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12009 Applications General purpose and switching Schottky barrier diode


    Original     		PDF BAS281. BAS283 BAS281 BAS282 BAS281 BAS282 BAS283 D-74025 31-Jan-01 85500 transistor

    K 85500

    Abstract: 85500 BAS281
    Text: BAS281 .BAS283 Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static discharge • • Low capacitance Low leakage current • Low forward voltage drop • Very low switching time Applications General purpose and switching


    OCR Scan     		PDF BAS281 BAS283 BAS281 BAS282 01-Apr-99 K 85500 85500

    TFK 1n4148

    Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
    Text: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes


    OCR Scan     		PDF 1N3600 1N3604 1N4148 1N914 1N4150 1N4151 1N4153 1N4154 TFK 1n4148 TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk

    Untitled

    Abstract: No abstract text available
    Text: BAS281 .BAS283 VÎ&NÂY ▼ Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forw ard voltage drop • Very low sw itching tim e Applications G eneral purpose and sw itching


    OCR Scan     		PDF BAS281 BAS283 BAS281 BAS282 BAS283 D-74025 01-Apr-99

    Untitled

    Abstract: No abstract text available
    Text: BAS281 .BAS283 Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time Applications General purpose and switching


    OCR Scan     		PDF BAS281 BAS283 BAS282 01-Apr-99