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    BAS16 TRANSISTOR Search Results

    BAS16 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BAS16 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAX12 equivalent

    Abstract: 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840
    Text: Philips Semiconductors Small-signal Transistors and Diodes Index TYPE NUMBER TYPE NUMBER TYPE NUMBER 1N821 1PS76SB70 BAL74 1N821 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A 1PS79SB70 BAL99W 1N825 1PS88SB48 BAS16 1N825A 1PS89SB14 BAS16T 1N827 1PS89SB15 BAS16W


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    PDF 1N821 1PS76SB70 BAL74 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A BAX12 equivalent 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


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    PDF STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


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    PDF STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72

    470uF 50V capacitor

    Abstract: nichicon aluminum capacitor 2n2222a SOT23 105k x7r 50 240-333 Nichicon Capacitor of capacitor 470uf 16v nichicon 470uF capacitor 10 uF x 25v JST SOT-23
    Text: REV. A Count RefDes 3 C63 C19 C34 1 C14 1 C46 4 C12 C27 C41 C52 6 C25 C39 C1 C15 C30 C44 1 C51 4 C13 C28 C42 C10 1 C5 3 C29 C43 C54 3 C4 C18 C33 3 C3 C17 C32 1 C11 2 C26 C40 2 C45 C53 PMP405 Part Number Std Std Std Std Std Std Std Std Std Std Std Std Std Std


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    PDF PMP405 012uF 018uF 022uF 100pF 470uF 50V capacitor nichicon aluminum capacitor 2n2222a SOT23 105k x7r 50 240-333 Nichicon Capacitor of capacitor 470uf 16v nichicon 470uF capacitor 10 uF x 25v JST SOT-23

    Full-bridge SG3525

    Abstract: scl-1-h-dpno schematic diagram battery charger sg3525 scl-1-h-dpno RELAY UPS sg3525 circuit diagram schematic diagram dc-ac inverter sg3525 sg3525 schematic charger UM0527 sg3525 pwm INVERTER Relpol RM84-2012-25-1024
    Text: UM0527 User manual UPS evaluation board Introduction The UPS evaluation board provides a complete solution addressing the low/medium range UPS segment with 700 VA output power capability. The evaluation board, from a hardware and firmware point of view, is ready to support the development of a complete solution.


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    PDF UM0527 RS232 Full-bridge SG3525 scl-1-h-dpno schematic diagram battery charger sg3525 scl-1-h-dpno RELAY UPS sg3525 circuit diagram schematic diagram dc-ac inverter sg3525 sg3525 schematic charger UM0527 sg3525 pwm INVERTER Relpol RM84-2012-25-1024

    HR R 221k 2kv

    Abstract: lm358 CHARGE CONTROLLER hr r 102k 2kv HR R 681K 2KV diode u2 7d lm358 jrc lm358 soft start LM358 resistor 15k UNR521L
    Text: ICS1738 QuickSaver Pulse Conditioning Charge Control IC for Rechargeable Lithium-Ion Batteries General Description The ICS1738 is a low cost 8 pin CMOS IC that provides a unique pulse conditioning charge technique, precision reference, fast charge time-out, back-up over-voltage and under-voltage shutdown, and status indicator for charging single and multiple


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    PDF ICS1738 ICS1738 HR R 221k 2kv lm358 CHARGE CONTROLLER hr r 102k 2kv HR R 681K 2KV diode u2 7d lm358 jrc lm358 soft start LM358 resistor 15k UNR521L

    SMD Transistor 1f

    Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
    Text: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high


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    PDF ZXCD100MOEVAL ZXCD100MOEVAL ZXCD1000 SMD Transistor 1f 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram

    BT137 application example

    Abstract: THERMOSTAT SCHEMATIC THERMOSTAT SCHEMATIC ntc BT137 application note safety thermostat CIRCUIT DIAGRAM pcb layout ntc 50-15 bt137 sample schematic diagram digital thermostat control transistor BT137 IES5541A
    Text: Engineering Sample Information MODULE ASSEMBLY REVISION 5.0 2007 Dec 11 HM226 - L / T Relay Switching Module with Contact Protection HENDON SEMICONDUCTORS 1BUTLER D RIVE HENDON SA 5014 AUSTRALIA HM226 - L / T Protected Relay Switching Module CONTENTS 1 FEATURES


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    PDF HM226 BT137 application example THERMOSTAT SCHEMATIC THERMOSTAT SCHEMATIC ntc BT137 application note safety thermostat CIRCUIT DIAGRAM pcb layout ntc 50-15 bt137 sample schematic diagram digital thermostat control transistor BT137 IES5541A

    MHDR1X2

    Abstract: CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer
    Text: SiP11206DB Vishay Siliconix 200 W 1/16th Brick IBC Demo Board using SiP11206 DESCRIPTION SiP11206 is a half-bridge controller for intermediate bus converters. While SiP11206 allows for overall better efficiency through out the input voltage range, since its duty


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    PDF SiP11206DB 1/16th SiP11206 BAS16 MMUN2213LT1G S09-0324-Rev. MHDR1X2 CR3216-1206 d9 dl sot23 Capacitor Semiconductor SIM Model "EI CORE" Si7156DN MHDR1X MLP44-16 planar transformer layout EI 33 transformer

    Zener diode DW

    Abstract: diode 1039 transistor 1039 bav70 transistor zener wafer MMBZ52xxB 1N4148W BAS16TW BAS20W BAV19W
    Text: PRODUCT CHANGE NOTICE Contact Date: February 4, 2005 Implementation Date: Immediate Alert Category: Discrete Semiconductor DCS/PCN-1039 Alert Type: PCN #: Wafer Fab Site Qualification PCN #: 1039 TITLE Qualification of Fabrication Site for Switching, Zener and Small Signal Transistor Wafer


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    PDF DCS/PCN-1039 BAV70 BAV70DW MMBZ46xxx MMSZ46xxx TLC363Cxxxx BZX84CxxxT MMBZ52xxB MMSZ52xxB MMBT3906 Zener diode DW diode 1039 transistor 1039 bav70 transistor zener wafer MMBZ52xxB 1N4148W BAS16TW BAS20W BAV19W

    HR R 221k 2kv

    Abstract: led 2 pin lm358 jrc LM358 hr r 102k 2kv transistor pnp 3015 ICS1738 415V diodes Rectifier circuit diagram HR R 681K 2KV lm358 current sense
    Text: ICS1738 QuickSaver Pulse Conditioning Charge Control IC for Rechargeable Lithium-Ion Batteries General Description The ICS1738 is a low cost 8 pin CMOS IC that provides a unique pulse conditioning charge technique, precision reference, fast charge time-out, back-up over-voltage and under-voltage shutdown, and status indicator for charging single and multiple


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    PDF ICS1738 ICS1738 HR R 221k 2kv led 2 pin lm358 jrc LM358 hr r 102k 2kv transistor pnp 3015 415V diodes Rectifier circuit diagram HR R 681K 2KV lm358 current sense

    motorola rf Power Transistor Data Book

    Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    PDF MRF6409 MRF6409 DL110/D) motorola rf Power Transistor Data Book Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3034/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3034 The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast


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    PDF TP3034/D TP3034 TP3034 TP3034/D*

    TP3007S

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3007S/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3007S The TP3007S is designed for 24 volts common emitter base station amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed


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    PDF TP3007S/D TP3007S TP3007S TP3007S/D*

    1N914 SOT-23

    Abstract: BC337 SOT-23 BAT48 zener 1N4148 SOD323 BC337 sot23 gfp50n
    Text: G e n e r a l Semiconductor Diodes and Transistors Visit General SemiconductorÕs Website at www.gensemi.com GENFETª Power MOSFETs Small Signal Switching Diodes Mfr.Õs Type N-Channel MOSFETs Leaded Mfr.Õs Type TO-220 TO-252 TO-263 Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ


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    PDF DO-35* OD-80C OD-323• OD-123† OT-23~ OT-23§ O-220 O-252 O-263 1N914 SOT-23 BC337 SOT-23 BAT48 zener 1N4148 SOD323 BC337 sot23 gfp50n

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


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    PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


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    PDF BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Diodes/Transistors/LEDs Assortment Kit 42 \ nines mini t I k IIs /i S i m i l l Si ^ 11: 11 H i n d i s h i t I lim it s SOT23 SOT23 MMBD914 BAS16 MMBD2838 (BAV70) MMBD2836 (BAW56) MMBD7000 (BAV99) * SOD80 BAV100 LL914 LL4148 R lL 'IillL T S SOD80 l.ll \ 111|]


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    PDF MMBD914 BAS16) MMBD2838 BAV70) MMBD2836 BAW56) MMBD7000 BAV99) SM4001 SM4002

    BAV105

    Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30


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    PDF DO-35 DO-34 OD123 OD80C OD110 OT143 OT323/ BAW62/ BAV21 BAV10 BAV105 BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12

    35 W 960 MHz RF POWER TRANSISTOR NPN

    Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


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    PDF TP3034 TP3034 35 W 960 MHz RF POWER TRANSISTOR NPN 2779, transistor transistor j8 j8 er capacitor

    DL110

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    PDF MRF6409 DL110/D) DL110

    motorola rf device

    Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    PDF MRF6409 MRF6409 DL110/0) DL110/D) motorola rf device DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book

    BF914

    Abstract: BZV80 PXTA14 PMBTA64 PMBFJ177 BB219 PMBFJ174 BST60 PMBTA14 PMBT4401
    Text: Surface Mount Transistors & Diodes Type Index Typ« Pag* ivi» Rage type Pago Type Page Type ' Page lype Page BA314L BA423L BA582 BA682 BA683 183 175 175 175 175 BC808-25 BC808-40 BC817-16 BC817-25 BC817-40 144 144 140 140 140 BCV72 BCW29 BCW30 BCW31 BCW32


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    PDF BA314L BA423L BA582 BA682 BA683 BAS16 BAS17 BAS20 BAS21 BAS28 BF914 BZV80 PXTA14 PMBTA64 PMBFJ177 BB219 PMBFJ174 BST60 PMBTA14 PMBT4401