mac232
Abstract: LM2596S-ADJ AMD socket fm1 pinout MAX232 smd RS232 MAX232 smd htc legend NEXUS CONNECTOR TP 120 htc LM2596 max232cse 3.3v JTAG header 7x2 smd
Text: MAC7100EVB Users Manual Revision 1.1 November 2004 Note – This users manual is for RE11505F Rev O PCBs MAC7100EVB Users Manual Rev 1.1 November 2004 Revision History: Revision 0.2 1.0 1.1 Date 27 June 2003 18 Sept 2003 12 Nov 2004 Author A. Robertson A. Robertson
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MAC7100EVB
RE11505F
MAC7100
63A11505S
mac232
LM2596S-ADJ
AMD socket fm1 pinout
MAX232 smd
RS232 MAX232 smd
htc legend
NEXUS CONNECTOR TP 120
htc LM2596
max232cse 3.3v
JTAG header 7x2 smd
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TAPC640
Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
Text: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged
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WED9LAPC2B16P8BC
TAPC640
WED9LAPC2B16P8BC
WED9LAPC2C16V4BC,
WED9LAPC2C16P8BC
WED9LAPC2C16P8BI
WED9LAPC2C16V4BC
b-cas
153 tss
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TAPC640
Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC
Text: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in
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WED9LAPC2B16P8BC
TAPC640
WED9LAPC2B16P8BC
WED9LAPC2C16V4BC,
APC2B16P8BC
WED9LAPC2C16V4BC
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VR5500
Abstract: VR4181A user manual VR4181a VR10000 Series ECU 206 7.4.5 ras 0610 relay nec sgp U14273E B08212 ns16550AN
Text: User’s Manual TM VR4181A 64-/32-Bit Microprocessor Hardware µPD30181A µPD30181AY Document No. U16049EJ1V0UM00 1st edition Date Published August 2002 N CP(K) 2002 1997 Printed in Japan [MEMO] 2 User’s Manual U16049EJ1V0UM NOTES FOR CMOS DEVICES 1
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VR4181A
64-/32-Bit
PD30181A
PD30181AY
U16049EJ1V0UM00
U16049EJ1V0UM
VR5500
VR4181A user manual
VR4181a
VR10000 Series
ECU 206 7.4.5
ras 0610 relay
nec sgp
U14273E
B08212
ns16550AN
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Untitled
Abstract: No abstract text available
Text: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a
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WED9LAPC2B16P8BC
LUCTAPC640
WED9LAPC2B16P8BC
WED9LAPC2B16P8BI
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Untitled
Abstract: No abstract text available
Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly
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HC80805
1x10s
1x109
1x102upsets/module-day)
BADDR11
BARRD10
BDISCRI03
BDISCRI02
BDISCRI01
BADDR21
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Untitled
Abstract: No abstract text available
Text: in te i MILITARY i960 MX MICROPROCESSOR OVERVIEW The i960™ MX processor is a military member of Intel's second generation of i960 embedded microprocessors. These second generation i960 processors feature a Superscalar core that will decode and sequence multiple
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64-entry
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I960 mx
Abstract: 271194 marking A17 DIODE marking ED BDATA23 i960mx 27119
Text: In te l. MILITARY i960 MM/MX SUPERSCALAR MICROPROCESSOR Implements JIAWG 32-bit ISA Standard i960® MX Processor Only High-Performance 32-bit Superscalar Architecture — Up to Three Instructions per Clock Execution — Five Parallel Execution Units — Load/Store Architecture
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32-bit
BDIRTAG16
BDATA61
BDATA58
BDIRTAG18
BDATA62
I960 mx
271194
marking A17
DIODE marking ED
BDATA23
i960mx
27119
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32kx8 sram
Abstract: VSS115 32kxS
Text: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day
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HC80820
PINOUR19
BADDR18
BADDR17
BADDR16
BADDR15
122-lead
32kx8 sram
VSS115
32kxS
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Untitled
Abstract: No abstract text available
Text: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day
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HC80820
BADDR11
BARRD10
BDISCRI02
BDISCRI01
BADDR21
BADDR20
BADDR19
BADDR18
BADDR17
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Untitled
Abstract: No abstract text available
Text: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec
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1x106
1x101
1x109
HC80805
BADDR16
BADDR15
122-lead
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