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    BA0 N10 Price and Stock

    CTS Corporation BDN103CBA01

    Heat Sinks IERC Heat Sink 1.01x1.01x0.355
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    Mouser Electronics BDN103CBA01 1,738
    • 1 $2.82
    • 10 $2.63
    • 100 $2.32
    • 1000 $2.03
    • 10000 $2.01
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    Seiko Epson Corporation SG3225VAN 100.000000M-KCBA0

    Standard Clock Oscillators SG3225VAN 100.000000M-KCBA0: XTAL OSC 2.5~3.3V 20PPM -20~70C 1K TR
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    Mouser Electronics SG3225VAN 100.000000M-KCBA0
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    • 1000 $2.08
    • 10000 $1.96
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    Seiko Epson Corporation SG7050VAN 100.000000M-KCBA0

    Standard Clock Oscillators XTAL OSC ST 3.3V +/-20PPM -20~70C 1K T/R
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    Mouser Electronics SG7050VAN 100.000000M-KCBA0
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    • 1000 $1.88
    • 10000 $1.82
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    Seiko Epson Corporation SG3225VAN 100.000000M-KJBA0

    Standard Clock Oscillators SG3225VAN 100.000000M-KJBA0: XTAL OSC 2.5~3.3V 50PPM -20~70C 1K TR
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    Mouser Electronics SG3225VAN 100.000000M-KJBA0
    • 1 -
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    • 1000 $2.08
    • 10000 $1.96
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    CTS Corporation BDN10-5CB/A01

    Heat Sinks Type: Top mount / Shape: Square Pin fin / Length: 1.01" / Width: 1.01" / Height: 0.555" / Material: Aluminum Alloy / Material Finish: Black Anodize
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    Mouser Electronics BDN10-5CB/A01
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    • 1000 $2.02
    • 10000 $1.97
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    Find more BA0 N10 price and stock on Findchips.com

    BA0 N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ty9000

    Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
    Text: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices


    Original     		PDF TY9000A400BMGF TY9000A400BMGF 912-bit 456-bit 256-bit 149-pin P-FBGA149-1013-0 N-29/29 ty9000 TY9000A ty9000a400 MCP 256M nand toshiba 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba

    ty9000

    Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
    Text: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous


    Original     		PDF TY9000A000CMGF TY9000A000CMGF 912-bit 256-bit 149-pin P-FBGA149-1013-0 N-29/29 ty9000 TY9000A 1g nand mcp SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp

    ty9000

    Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
    Text: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices


    Original     		PDF TY90009400DMGF TY90009400DMGF 912-bit 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-29/29 ty9000 MCP 256M nand toshiba ty90 toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM

    MCP 256M nand toshiba

    Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
    Text: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package


    Original     		PDF TY80009000AMGF TY80009000AMGF 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-39/39 MCP 256M nand toshiba toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9

    TY9000

    Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
    Text: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices


    Original     		PDF TY90009400FMGF TY90009400FMGF 912-bit 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-29/29 TY9000 MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM

    BA1 K11

    Abstract: ba1d1a PD48576118FF-E24-DW1-A
    Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109-A PD48576118-A R10DS0064EJ0001 PD48576109-A 864-word PD48576118-A BA1 K11 ba1d1a PD48576118FF-E24-DW1-A

    PD48576109,

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0100 PD48576109,

    PD48288236FF-EF25-DW1-A

    Abstract: PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209-A, 48288218-A, 48288236-A 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced


    Original     		PDF PD48288209-A, 8288218-A, 8288236-A 288M-BIT PD48288209-A 432-word PD48288218-A PD48288236-A PD48288236FF-EF25-DW1-A PD482

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118

    p144f

    Abstract: TDK EF25 BAP36 PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with


    Original     		PDF PD48576209 PD48576218 PD48576236 576M-BIT 864-word PD48576236 PD48576209,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A R10DS0098EJ0001 288M-BIT PD48288109A 432-word PD48288118A 216-word

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0300

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300

    PD48288236FF-EF25-DW1-A

    Abstract: 4828
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M8E0904E PD48288236FF-EF25-DW1-A 4828

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0001 Rev.0.01 August 1, 2011 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the


    Original     		PDF PD48288209A PD48288218A PD48288236A R10DS0097EJ0001 288M-BIT PD48288209A 432-word PD48288218A 216-word PD48288236A

    K4J10324QD

    Abstract: k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3
    Text: 1Gb GDDR3 SDRAM K4J10324QD 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.2 May 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J10324QD 136FBGA 10MAX K4J10324QD k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with


    Original     		PDF PD48576209 PD48576218 PD48576236 576M-BIT 864-word PD48576236 PD48576209,

    TYAD00AC00BUGK

    Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
    Text: TYAD00AC00BUGK TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM, Nand E2PROM and Giga Byte Nand E2PROM Mixed Multi-Chip Package DESCRIPTION Lead-Free The TYAD00AC00BUGK is a mixed multi-chip package containing a 1,073,741,824-bit 536,870,912-bit x 2devices


    Original     		PDF TYAD00AC00BUGK TYAD00AC00BUGK 824-bit 912-bit 256-bit 224-pin 001e800 001e810 003d400 SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1

    K4J10324KE-HC1A

    Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
    Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J10324KE 136FBGA 10tCK 10MAX K4J10324KE-HC1A K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288209-A μPD48288218-A μPD48288236-A R10DS0156EJ0100 Rev.1.00 Feb 01, 2013 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced


    Original     		PDF PD48288209-A PD48288218-A PD48288236-A 288M-BIT 432-word R10DS0156EJ0100 PD48288236-A PD48288209-A,