BA 3RD SEM Search Results

zo 107 NA P 611

Abstract: transistor jsx clc5665 cable tv amplifier CLC431 CLC432 CLC730013 OA-25 ideal transformer transmission lines Twisted Pair spice model
Contextual Info: S eptem ber 1998 National Semiconductor & f - ° 9 r " £ O 2 o> / o > CLC5665 Low Distortion Amplifier with Disable o General Description Features > The C LC 5665 is a low -cost, w ideband am plifier that provides very low 2nd and 3rd harm onic distortion at 1MHz (-89/-92dBc). The

BA 3RD SEM

Abstract: holtek drum melody duck common cathode 7-segment led display
Contextual Info: HOLTEK H r HT3690A Multi-Function Keyboard Instrument Features • • • • • • • • • • • • • • • • • • • • • • • • O perating voltage: 2.4V~5.1V On-chip crystal oscillator: 3.58M Hz 49-key in strum en t and com pass ran ge from

crystal quartz 24mhz

Abstract: Tele Quarz Group Crystal Oscillator 32,768 SMD Quarz Datasheet Tele Quartz Group Crystal Oscillator analog Quartz Clock c166 development SAx-C167-LM C161CI microcontroller based inverter AP2420
Contextual Info: Microcontrollers ApNote AP242003 Crystal Oscillator of the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the quartz crystal oscillator functionality and gives recommendations

ba capacitance diode

Abstract: BA diode BA 30 C 052 marking on semiconductor ba pin diode
Contextual Info: BA 597 BA 597 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code taped Pin Configuration Marking 1 2 Package BA 597 UPON INQUIRY C SOD-323 A yellow/R Maximum Ratings

marking code js 3 pin diode

Abstract: ba sot23 BA diode JS-220 MA MARKING SOT23 marking code BA sot23 BA 30 C 052 marking on semiconductor sot marking code BA
Contextual Info: BA 887 Silicon PIN Diode Preliminary Data ● ● RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion Type Ordering Code taped Pin Configuration Marking 1 2 3 Package BA 887 Q62702- A SOT-23 C PDs Maximum Ratings Parameter Symbol

Contextual Info: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings

Contextual Info: SIEMENS S ilico n PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type Ordering Code taped Pin Configuration 1 2 Marking Package BA 597 UPON INQUIRY C yellow/R SOD-323 A Maximum Ratings

MSM66301 NX8

Abstract: 09F0h OLMS66K OLMS-66K D16h MAC66K
Contextual Info: 1 FJXLNX-8-500S-01 OLMS 66K シリーズ nX-8/500S コア インストラクションマニュアル CMOS 16bit マイクロコントローラ 第 2 版 ’00.10 作成 ご注意 1. 本書に記載された内容は製品改善及び技術改良等により将来予告なしに変更することがあります。したがって、

Contextual Info: I T O S H IB A MICROW AVE POWER GaAa FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM7179-30L ' FEATURES : • LOW INTERMODULATION DISTORTION IM S - - 4 3 dBo at Po - 34.5 dBm, Slnglt Carrier level - HIG H POWER P ldB a4 4 . 5dBmat 7.1 GHz to 7.9 QH* > H IG H GAIM

54pin

Abstract: ASCEND Semiconductor 100MHZ AD484M1644VTA AD484M1644VTA-10L AD484M1644VTA-15 AD484M1644VTA-6 AD484M1644VTA-7 AD484M1644VTA-7I AD484M1644VTA-7L AD484M1644VTA-8I
Contextual Info: Ascend Semiconductor Corporation 64Mb SDRAM ASCEND ASCEND Semiconductor Semiconductor 64M 64M SDRAM SDRAM Data Data sheet sheet Tel: 03 5635888 / Fax: (03)5635188/ http://www.ascendsemi.com.tw Preliminary 1 Ascend Semiconductor Corporation 64Mb SDRAM Ordering Information

Tele Quarz Group Crystal Oscillator

Abstract: Tele Quartz Group Crystal Oscillator Tele Quarz Group Tele Quartz Group Crystal Filter Tele Quartz Group crystal 27 hc49 inductance D-90443 HC49 SMD Quarz Datasheet AP242002 QUARZ CRYSTAL 26 MHZ
Contextual Info: Microcontrollers ApNote AP242002 Crystal Oscillator of the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the quartz crystal oscillator functionality and gives recommendations

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance

MB84VD2003

Abstract: MB84VD2002 E4000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VD2002-10/MB84VD2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

MB84VD2002

Abstract: MB84VD2003
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VD2002-10/MB84VD2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7177B P R E U - nc,uic. ^ 3 7 .1 — 7 .7G H z BA N D lO W IN TE R N A LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 1 — 7 .7

MB84VD2008

Abstract: MB84VD2009 10000H sa2111
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

MB84VD2008

Abstract: MB84VD2009 sa2111
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

4kw marking

Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50403-1E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V

C38V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 5 . 9 - 6 . 4

AP2420

Abstract: Tele Quartz Group Crystal Oscillator Tele Quarz Group Tele Quarz Group Crystal Oscillator crystal oscillator safety factor crystal quarz KFZ0012 C166 KFZ0017AS C167CR403
Contextual Info: Microcontrollers ApNote AP2420 Crystal Oscillator of the C500 and C166 Microcontroller Families The microcontrollers of the C500/C166 Family include the active part of the oscillator. This document explains the quartz crystal oscillator functionality and gives recommendations

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD23180FM-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V • High performance 70 ns maximum access time (Flash)

IRC RN55D

Contextual Info: National Semiconductor t u CLC401 Fast Settling, Wideband High-Gain Monolithic Op Amp General Description Features The CLC401 is a wideband, fast-settling op amp designed for applications requiring gains greater than ± 7 . Constructed using an advanced complementary bipolar process and a proprietary design, the CLC401

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET MICROW AVE SEM ICON DUCTOR T IM 5359-45S L TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION tM3 « -4 8 dBc at Po - 35.5 dB* Singt« Carrier Laval ■ HIGH POWER P io b * 4 6 .5 dfta at 5.3 GH z to 5.9 <3Hz

A13 MARKING CODE

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29F400BA DS05-20812-3E mbm29f400ta-90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20812-3E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 MBM29F400TA/MBM29F400BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands