BA 151 K Search Results

Contextual Info: TABLE OF CONTENTS 1. INDEX Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . How and What to know as reading Part No. Quick Reference .

C 4751-1

Contextual Info: 11111 1 234567879A4BC 12344567897A 1 234567375189AB8CCDE 18FBF19A1DF1BA D E 1 ! "8D"#$1 D 1 •1 ·1 ·1 ·1 ·1 ·1 ·1 ·1 ·1 ·1 ·1 1513*;+17+1A117%11-5448A9'516/!'+1%5954A61 &A9'51 951785134%4A88A 6513*15+7%911

scr 106d

Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007

TRIAC TAG 280 600

Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
Contextual Info: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV­ V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100

94B41

Contextual Info: Ambient Light Sensor and Proximity Sensor with I2C Interface APS-16D25-11-DF8/TR8 1 1 234567381 1 9ABC3D51ECF5183D8CDF1 1 21345678719ABACB4DEA16EE876F4B6F181B1851 2134567871AE8B6F185C8FB1 21874F1AA1BA1ACB4E1AFA1 !1A"ACB6F#1

BT 151 PIN DIAGRAM

Abstract: MK31VT872A MK31VT872A-8YC
Contextual Info: M K31VT872A-8YC 98.06.26 O K I iSem ¡conductor M K 3 1 V T 8 7 2 A -8YC 8,388,608 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK): DESCRIPTION The Oki MK31VT872A-8YC is a fully decoded, 8,388,608 x 72bit synchronous dynamic random access memory composed of eight 64Mb DRAMs(8Mx9) in TSOP packages

BA389

Abstract: pin diode do35 Q62702-A732
Contextual Info: SIEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD

BT 151 PIN DIAGRAM

Abstract: MK31VT864A MK31VT864A-8YC
Contextual Info: M K31VT864A-8YC 98.06.26 O K I Semiconductor M K 3 1 V T 8 6 4 A -8 Y C 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK);_ DESCRIPTION The Oki MK31VT864A-8YC is a fully decoded, 8,388,608 x 64bit synchronous dynamic

CA10Y

Contextual Info: ETG81-O5OA 30a POW ER T R A N S IS T O R M ODULE ^ Features *f <4 • 7 U - j f r - f U >• • hFE*''ifi5'-' • Jfeüïfê — Kl*3fit Including Free W heeling Diode High DC Current Gain Insulated Type ■ f f li â : A pplications • ’k .M.JlX't •

h11q

Abstract: tfk K TFK 19 018 2DI150D-050 TFK 600 TFK 450 TFK 03 Diode TFK - 018 TFK diode tfk t 39
Contextual Info: 2 I 1 5 O D - O 5 O O 50A D /< 7 - — )V P O W E R T R A N SIS T O R M O D U LE • I f f i : Features • 7 1; - * < y • hFE/^fij^ • tell&B 5j"— KrtSK Including Free Wheeling Diode High DC Current Gain Insulated Type IfflìÈ : A pplications High Power Switching

ETG81-O5OA

Abstract: TI 121 Transistor diode b22 ETG81-050A B-23 M102 T151 transistor ac 151
Contextual Info: ETG81-O5OA 30a : Outline Drawings — )V POWER TRANSISTOR MODULE F e a tu re s • 7 l) — x) K rtffll Including Free W heeling Diode • hFE*'rfl5^N High DC Current Gain Insulated Type IffliÊ ’ A p p lic a tio n s > 9 Power S w itching • AC i — 9 V M

DTM63614

Contextual Info: DTM63614 1GB-128M x 72, 184 Pin Registered DDR SDRAM DIMM Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM Auto & self refresh capability SSTL_2 compatible inputs and outputs VDD/VDDQ= 2.5V +/- 0.2V MRS cycle, with address key, programs Latency Access

2040 ap

Abstract: 94v-0 A RoHS 36-07 7-103361-2
Contextual Info: AMPMODU Interconnection System AMPMODU .025 [0.64] Square Interconnection System AMPMODU Headers and Receptacles, .100 [2.54] Centerline 87605-1 Bulkhead Header 6-534237-8 SR Top Entry 6-535541-0 SR Top Entry 87220-8 SR VT 6-146281-0 SR VT BA 87227-5 DR VT

BAR14-1

Contextual Info: SIEMENS AKTIEN6ESELLSCHAF bOE H • J23Sb05 0051MaM M83 « S I E G SIEMENS -T -07-16 Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Characteristics (TA= 25° C) Maximum Ratings Type 1, V Ct pF mA V BA 585

Contextual Info: MEMORY CMOS 4 x 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811643242A-100&#39;-84/-67/-1 00L/-84L/-67L • DESCRIPTION The Fujitsu MB811643242A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing 67,108,864 memory cells accessible in a 32-bit format. The MB811643242A features a fully synchronous

Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2345674281 9ABC12C81 DEC221 F19AAA1 24A4281 9ABC12C81 DEC221 D1AA1E 1 24!A"41 9ABC1C21 DEC21 #A$1%&A1 1 1 1 1

smd sot23 marking l6

Abstract: MAF100 HB sot23 DO-35-DHD sot-23 Marking l7 ZF SOT23
Contextual Info: SIEMENS AKTIENGESELLSCHAF Q3E T> • Ô235b05 GQlSb70 2 « S I E Û PIN Diodes fo r G eneral Purposes Glass Packages Characteristics at Tk = 2 5 °C Max. ratings Type Vr Ptot V W °C BAR 12-1 BAR 12-3 100 100 0.25 0.25 BAR 79 60 - Package Marking BAR 12 C n ty p

l64324

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: Preliminary SDRAM MODULE_ KMM350S823BT1 Revision History Revision 3 July 1998 - "REGE" description is changed. REV. 3 July 1998 Preliminary KMM350S823BT1 SDRAM MODULE KMM350S823BT1 SDRAM DIMM (Intel 1.0 ver. Base) 8M x72 SDRAM DIMM with R egister based on 8Mx8, 4B anks 4K Ref., 3.3V S ynchronous DRAM s w ith SPD

V271BA60

Abstract: V751BA60 V481BA60 V321BA60
Contextual Info: Varistor Products Industrial High Energy Terminal Varistors > BA/BB Series BA/BB Varistor Series RoHS Description BB Series The BA and BB Series transient surge suppressors are heavy-duty industrial Metal-Oxide Varistors MOVs designed to provide surge protection for motor

LS623

Abstract: D2537 SN74LS620
Contextual Info: S N 54LS 620, SN 54LS621, SN 74LS 620, SN 74LS 621, SM 74LS623 OCTAL BUS TRANSCEIVERS D2537, AUGUST 1979-REVISEO MARCH 1988 SN 54LS620, S N 54LS621, S N & 4 L S 6 2 2 . . . J P AC K A G E S N 74LS 620, S N 74LS621, S N 7 4 L S 6 2 3 . . . D W O R N P AC K A G E

Contextual Info: Preliminary KMM366S924T_PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S924T KMM366S924T SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

b310 diode

Abstract: diode ssil
Contextual Info: 1DI75F-120 75a M ïfé '+ iÈ : Outline Drawings POWER TRANSISTOR MODULE : Features • S Ü ÎE E • High. Voltage 7'J—s f c ' f L / / ' ? ' K f * 3 f f l E • A S O * ''J a L ' •mmr* Including Free W heeling Diode Excellent Safe Operating Area i nsulated Type

44s16030

Contextual Info: Preliminary KMM377S1620CT1 SDRAM MODULE KMM377S1620CT1 SDRAM DIMM Intel 1.0 ver. Base 16Mx72 SDRAM DIMM with PLL & R egister based on 16Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S1620CT1 is a 16M bit x 72 S ynchro­