B8H100G Search Results
B8H100G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and |
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MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D | |
b8h100gContextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and |
Original |
MBRB8H100T4G MBRB8H100/D b8h100g | |
Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and |
Original |
MBRB8H100T4G, NBRB8H100T4G MBRB8H100/D | |
b8h100g
Abstract: MBRB8H100T4G
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MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G | |
B8H100G
Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
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MBRB8H100T4G MBRB8H100/D B8H100G B8H100 MBRB8H100T4G B8H1 C146C marking 146C | |
b8h100g
Abstract: MBRB8H100T4G
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MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G | |
b8h100g
Abstract: B8H100
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MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D b8h100g B8H100 |