B81164842A Search Results

Contextual Info: cP IITSU May 1997 Revision 1.2 data sheet SDC16UV7284- 67/84/100/125 T-S 128MByte (16Mx 72) CMOS Synchronous DRAM Module General Description The S D C 16U V 7284-(67/84/100/125)T-S is a high performance, 128-m egabtye synchronous, dynamic RAM module organized

Contextual Info: cP IITSU November 1997 Revision 1.1 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as

Q8-DQ15

Contextual Info: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC16UV6484- 67/84/100/125 T-S 128MByte (16M x 64) CMOS Synchronous DRAM Module General Description The SDC16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynamic RAM module organized

Contextual Info: cP IITSU July 1997 Revision 1.1 data sheet SDC16U V6484- 67/84/100/125 T-S 128MByte (16Mx64) CMOS Synchronous DRAM Module General Description The SDC16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynamic RAM module organized as 16M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: llT S U May 1997 Revision 1.0 ^ SDC16U V6484- 67/84/100/125 T-S 128MByte (16M X 64) CMOS Synchronous DRAM Module General Description The SDC 16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynam ic RAM module organized as 16M words by 64 b is, in a 168-pin, dual-in-line m em ory module (DIMM) package.

Contextual Info: cP IITSU December 1997 Revision 2.0 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as

A_67

Contextual Info: SDRAM 2 • Synchronous DRAM: SDRAM (CMOS) Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wxb) Part Number M B 8 1 164441 A -100 Clock Frequency max. (MHz) 100(10) Access Time t Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) Power Consumption

lem 811

Contextual Info: - PRELIMINARY - October 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 6 4 8 4 2 A - 1 2 5 / - 1 0 0 / - 8 4 / - 6 7 CMOS 4 X 2M X 8 SYNCHRONOUS DRAM CMO S 4-BANK x 2,097,152 -W OR D x 8-BIT S Y N C H R O N O U S DY N A M IC RA ND OM AC CE SS M E M O R Y

Contextual Info: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM B81164842A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu B81164842A is a CMOS Synchronous Dynamic Randomp A eces^M em ory SDRAM containing

Contextual Info: - PRELIM IN ARY- October 1996 Edition 1.0 PRO DUCT PROFILE SHEET FUJITSU : M B 8 1 1 6 4 8 4 2 A-125/-100/-84/-67 CMOS 4 x 2M x 8 SYNCHRONOUS DRAM CMOS 4-BANK x 2,097,152-WORD x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu B81164842A is a CMOS Synchronous Dynamic Random Access Memory

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as

Contextual Info: MEMORY Un-buffered 8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8508S064AE-100/-84/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 8 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8508S064AE is afully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM