B811 Search Results

V7-3E10E9

Abstract: CW-B8111
Contextual Info: FO-50 360-L 1 CW-B8111 2 j 3 1 4 1 5 1 1 6 1 1 8 1 1 REV 2 1 io C H A N G E D BY DLT I8JAN0I 9 DOCUMENT 2 0 2 16 1 CHECK SAV .330 . I 60 T - -*— 40 G r t - o 3X .250± .003 L . I 65 -PLASTIC PLUNGER .0 4 7 M A X - n PRETRAVEL . I22±. 0 0 2 HOLE . 06

Contextual Info: MEMORY CMOS 2 x 512 K x 16 BITS SYNCHRONOUS DYNAMIC RAM M B 8 1 1 1 7 1 6 2 2 E - 1 2 5 / - 1 0 0 / - 8 4 / - 6 7 CM OS 2-BA N K 524,288-W O RD x 16 BITS Synchronous Dynam ic Random Access M em ory • DESCRIPTION The Fujitsu M B811171622E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: February 1993 Edition 1.0 FUJITSU DATA SHEET MB85326-60/-70/-80 CMOS 4 M x 3 6 Fast Page Mode DRAM Module CMOS 4,194,304 x 36 Bit Fast Page Mode DRAM Module The Fujitsu M B85326 is a fully decoded, CM O S dynamic random access memory DRAM module consisting of nine M B8117400 devices. The M B 85326 is optimized for

8118165A

Abstract: 8118165
Contextual Info: MEMORY CMOS 1Mx 16 BIT HYPER PAGE MODE DYNAMIC RAM M B 8118165A-60/-70 CMOS 1,048,576 x 16 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8118165A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The B8118165A features a “hyper page” mode of operation whereby

8117800A

Contextual Info: - PRELIMINARY - April 1996 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 7 8 0 0 A -60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM C MO S 2,097,152 x 8BIT Fast Page M ode Dynamic RAM The Fujitsu M B8117800A is a fully decoded CMOS Dynamic RAM DRAM that contains

PJ 62

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 05-101 6 5 -1 E MEMORY CMOS 1 M 16BIT FAST PAGE MODE DYNAMIC RAM M B811 6160A-60/70 C M O S 1,048,576 x 16BIT Fast Page Mode Dynamic RAM • d e s c r ip tio n The Fujitsu M B 8 1 161 60 A is a fully d e c o d e d C M O S D ynam ic RAM D R A M th a t con ta in s 16,777,21 6 memory; cells acce ssib le in 1 6 -bit incre me nts.

l64324

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM B811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

60-A70

Contextual Info: - PRELIMINARY - March 1996 Edition 2.2 Fujrrsu PRODUCT PROFILE SHEET M B 8 1 1 6 1 6 0 A -60/-70 CMOS 1 M X 16BIT FAST PAGE M ODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode D y na m ic RAM The Fujitsu M B8116160A is a fully decoded CMOS Dynamic RAM DRAM that contains

B813

Abstract: C614 B812 B811 B814 C615 B8-14
Contextual Info: EMS P O W E Screw Terminal Adaptor Boards for Type 1 PSU's R Model C615 RS Stock No 231-1166 Screw Terminal Board for Type 1 PSU's B811 RS Stock No 231-1116 B812 RS Stock No 231-1122 FULL NUT SHAKEPROOF WASHER PLAIN WASHER SPACER INSULATOR SCREW EMS Manufacturing Ltd. England

B81121

Abstract: iec 384-14 2 Kondensatoren Siemens B81121 B81121 y2 mkp B81121-C EN 1452
Contextual Info: Entstörkondensatoren Y2 / 250 V~ B81121 Y2-Kondensatoren Nennspannung 250 V~, 50 bis 1000 Hz Aufbau ● ● ● ● Dielektrikum: Polypropylen MKP Aufbau mit innerer Reihenschaltung Kunststoffgehäuse (UL 94 V-0) Epoxidharzverguß flammhemmend Merkmale

iec 384-14 2 Kondensatoren

Abstract: B81133 X2 mkt B81133 IEC 384-14 X2 b81133 x2 b81133d1104m mkt siemens
Contextual Info: Entstörkondensatoren Entstörkondensatoren X2 X2 // 275 275 V~ V∼ B81133 X2-Kondensatoren mit kleinen Abmessungen Nennspannung 275 V~, 50/60 Hz Aufbau ● ● ● ● Dielektrikum: Polyester MKT Aufbau mit innerer Reihenschaltung Kunststoffgehäuse (UL 94 V-0)

81117822

Abstract: 81117822e
Contextual Info: MEMORY 2 x 1 M x 8 BITS JS B ilM •I 25/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS x 8 BITS Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu M B81117822E is a CMOS Synchronous Dynamic Random Ace&ss Memory (SDRAM containing 16,777,216 memory cells accessible in an 8-bit format. The MiJ8l 1178221= features a fully synchronous

Contextual Info: MEMORY CMOS1M x 16 BIT FAST RAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu B8118160A is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory cells accessible in 16-bit increments. The M B8118160A features a.% st pa$e” .mode of operation whereby high­

B81192C3474

Abstract: B81192 B81192C3104 B81192C3684 B81192C3224 B81192C3105 B81192C3333 B81192C3223 arklone capacitor b81192
Contextual Info: Film Capacitors EMI Suppression Capacitors MKP Series/Type: B81192 Date: May 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: Film Capacitors EMI Suppression Capacitors MKP Series/Type: B81123 Date: January 2014 EPCOS AG 2014. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

iec 384-14 2 Kondensatoren

Abstract: IEC 384-14 B81122 MKT B81122 Y2-250V
Contextual Info: Entstörkondensatoren Y2 / 250 V~ B81122 Y2-Kondensatoren im Rastermaß 10 mm Nennspannung 250 V~, 50/60 Hz Aufbau ● ● ● ● Dielektrikum: Polyester MKT Imprägniert Kunststoffgehäuse (UL 94 V-0) Epoxidharzverguß flammhemmend Merkmale ● Die Kondensatoren entsprechen den

B81122

Abstract: B81122A capacitor 250 VAC MKP passive flammability category mkp B81122A1103M B81122-Y2 40/100/21 epcos capacitor 0.22 EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES passive flammability category
Contextual Info: Film Capacitors EMI Suppression Capacitors MKP Series/Type: Date: B81122 August 2004 EPCOS AG 2004. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B81121

Abstract: Siemens B81121 B81121 y2 mkp mkp b81121 b81121 mkp B81121-C B8112 NF 840 rf marking Y2 MKP 1.44
Contextual Info: EMIChokes RF Suppression Capacitors SIMID Y2 / 250 02Vac Series B82422 B81121 Y2 capacitors Rated voltage 250 Vac, 50 to 1000 Hz Construction ● Dielectric: polypropylene MKP ● Internal series connection ● Plastic case (UL 94 V-0) ● Epoxy resin sealing, flame-retardant

Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET M B85392-60/-70/-80 CMOS 8 M x 3 2 Fast Page Mode DRAM Module CMOS 8,388,608 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85392 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of sixteen M B8117400 devices. The MB85392 is optimized

8117405a

Abstract: B8117405A
Contextual Info: MEMORY CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM M B 8117405A -60/-70 CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8117405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The M B8117405A features a “hyper page” mode of operation whereby high­

Contextual Info: MEMORY CMOS 2 M x 8 BIT FAST PAGE MODE DYNAMIC RAM B8117800A-60/-70 CMOS 2,097,152 x 8 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu B8117800A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The M B8117800A features a “fast page” mode of operation whereby high­

Contextual Info: MEMORY CMOS 2 x 1M x 8 BITS SYNCHRONOUS DYNAMIC RAM B81117822E-125/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS x 8 BITS Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B81117822E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-10187-3E MEMORY CMOS 1Mx 16 BIT FAST PAGE MODE DYNAMIC RAM B8118160A-60/-70 CMOS 1,048,576 x 16 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu M B8118160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: MEMORY CMOS 4 M x 4 BIT HYPER PAGE MODE DYNAMIC RAM B8117405B-50/-60 CMOS 4,194,304 x 4 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu B8117405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The M B8117405B features a “hyper page” mode of operation whereby high­