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    MSM511000

    Abstract: ZIP20-P-400 msm511000h
    Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM511000H_ 576-Word MSM511000H 18-pin 26/20-pin 20-pin MSM511000 ZIP20-P-400

    FST 460 TRANSISTOR

    Abstract: m5205 oki MSM6258 FST 460 KBR 6.0 MSM6258V QFP44-P-910-V1K Transistor FST 460 4813b MSM6258VJS
    Text: O K I Semiconductor ISM6258/MSM6258V ADPCM SPEECH PROCESSOR FOR SOLID STATE RECORDER TO CUSTOMERS FOR NEW CIRCUIT DESIGN For a new circuit design, i t is recom m ended to use not the MSM6258, b u t the M SM6388/ MSM6588 as described later. The MSM6258 has an 8-bit AD converter and


    OCR Scan     		PDF ISM6258/MSM6258V MSM6258, MSM6388/ MSM6588 MSM6258 MSM6388/MSM6588 12-bit MSM6388 FST 460 TRANSISTOR m5205 oki FST 460 KBR 6.0 MSM6258V QFP44-P-910-V1K Transistor FST 460 4813b MSM6258VJS

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith


    OCR Scan     		PDF 6652-X 6653-X 6654-X 6655-X 6656-XXX_ 12bit 09MGU 09MGWU 2424D MSM6652/6653/6654/6655/6656

    bl 9 a2

    Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
    Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.


    OCR Scan     		PDF MSM511000B/BL_ 576-Word MSM511000B/BL cycles/64ms MSM5110OOB/BL 242i4D 00177fa3 bl 9 a2 18-PIN 20-PIN 26-PIN ZIP20-P-400

    B724e

    Abstract: DD102b B72L
    Text: O K I Semiconductor MSM51V4170/SL_ 262,144-W ord x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T h e M SM 5 1 V 4 1 7 0 /SL is a n e w g en eratio n D y n a m ic R A M o rg an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 V 4 1 7 0 /SL is O K I's C M O S silico n gate process


    OCR Scan     		PDF MSM51V4170/SL_ 144-Word 16-Bit MSM51V4170/SL cycles/16ms, B724e DD102b B72L

    MSM OKI

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 5 1 1 6 6 4 A / A L _ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/AL is a n ew generation dynam ic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the M SM 511664A/AL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM511664A/AL 536-Word 16-Bit MSM511664A/AL 16-bit. cycles/32ms MSM OKI

    oki 117400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 117400 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The M SM 5117400 is a n ew generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF 304-Word 304-w MSM5117400 b7E424D MSM5117400 00173bt. oki 117400