B7E4540 Search Results

2M540

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1
Contextual Info: O K I Semiconductor MSM5 1 4 1 02 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The M S M 514102A /A L is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M S M 514102A /A L is OKI's CMOS silicon gate process technology.

MSC2312YS9

Abstract: c2312 54SMO
Contextual Info: O K I SEMICONDUCTOR C U SII GROUP IDE D j| ^ 7 5 4 5 4 0 000M3Sti 1 | » m ie o n tìu G to * * •' 111 MSC2312YS9/KS9 • J ' . 4 " 1 ,0 4 8 ,5 7 6 BY 9 B IT D Y N A M IC RAM M O D ULE GENERAL D E S C R IP TIO N The Oki MSC2312YS9/KS9 is a fully decoded, 1,048,576 words X 9 bit CMOS dynamic random

S82V16520

Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
Contextual Info: E2L0056-28-91 % This version: Sep. 1998 O K I Semiconductor M S82V16 5 2 0 2 62 ,14 4 -W o rd x 3 2 -B it x 2 -B a n k Synchronous G raphics R AM D E S C R IP TIO N The MS82V16520 is a synchronous graphics random access m em ory organized as 256 K w o r d s x 3 2

Contextual Info: O K I Semiconductor MSM5 I V I 6400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.

514400

Contextual Info: O K I Semiconductor MSM514400 B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynamic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the M SM 514400B/BL is OKI's CMOS silicon gate process technology.