Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C201ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C201ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 w ord x 8 bits. The MSM27C201ZB operates on a single 5 V pow er supply and is TTL compatible. Since the
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MSM27C201ZB
144-Word
MSM27C201ZB
32pin
32-pin
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Untitled
Abstract: No abstract text available
Text: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C
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E2D0017-27-42
6652/53/54/55/56-xxx,
652A/53A/
4A/55A/56A/58A-xxx,
MSM66P54-XX,
MSM66P56-xx
MSM6650
MSM6650
MSM6375
theMSM6650familymembersoffer
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54e4
Abstract: No abstract text available
Text: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random
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MSC2320A-XXYS9
36BIT
320A-XXY
51256JS
SC2320A-XXYS9
m////77///////////////f
f7711
b754S40
54e4
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TAA 840
Abstract: MSM51256
Text: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random
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B4240
MSC2320A-XXYS9
36BIT
MSM514256AJS)
MSM51256JS)
MSM511000AJS;
msc2320A-xxys9
t-46-23-17
TAA 840
MSM51256
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transistor w16
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 11665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The MSM511665A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.
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MSM511665A/AL
536-Word
16-Bit
MSM511665A/
16-bit.
MSM511664A/AL
cycles/32ms
transistor w16
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5298A 68-DOT C O M M O N DRIVER GENERAL DESCRIPTION T he M SM 5298AGS is a d o t m atrix LCD co m m o n d riv e r LSI w h ich is fab ricated b y lo w p o w e r CM O S m etal gate technology. T his LSI consists of 68-bit b id irectio n al sh ift register, 68-bit level
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MSM5298A
68-DOT
5298AGS
68-bit
5298AGSs
b754S40
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524,288 words x 8 bits. The MSM27C431AZB operates on a single 3.3 V power supply and is TTL compatible. Since
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MSM27C431AZB
288-Word
MSM27C431AZB
MSM27C431
32-pin
MSM27C421ZB)
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DU9 308
Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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MSM5117900
152-Word
MSM5117900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
DU9 308
32-PIN
MSM5117900-70
MSM5117900-80
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