B53T31 Search Results

Contextual Info: TDD D N AMER PHILIPS/DISCRETE 9 0D 1 0 1 5 8 MAINTENANCE TYPES D I L,b53T31 0010156 fi 1“ ' 3 3 - 0 7 BY261 SERIES SILICON BRIDGE RECTIFIERS Ready for use full-wave bridge rectifiers in a plastic encapsulation. The bridges are intended for use in equipment supplied from a.c. w ith r.m.s. voltages up to 420 V and

1N5822

Contextual Info: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,

BUK552

Abstract: BUK552-50A BUK552-50B T0220AB V77C transistor ac 180
Contextual Info: N AMER PHILIPS/DISCRETE E5E D t,b53T31 WË OOSObOS 2 PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

T63N

Abstract: philips dl 711
Contextual Info: 11 N AMER P H IL IP S /D IS C R E T E Q tE D PHS1401 SERIES fc>b53T31 Q D l l b T S E • t - 03-n ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft

Contextual Info: • Philips Semiconductors t>b53T31 0024804 483 HIAPX N AUER PHILIPS/DISCRETE Product specification b?E PNP 5 GHz wideband transistor c BFG31 PINNING FE A T U R E S • High output voltage capability PIN • High gain bandwidth product 1 emitter DESCRIPTION

DL 711 PHILIPS

Abstract: philips dl 711 IEC134 PHS1401 PHS1402 PHS1403 PHS1404
Contextual Info: PHS1401 SERIES N AMER PHILIPS/DISCRETE QfaE D fc>b53T31 OGllbTB • T-03-1 7 ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft

Contextual Info: N AUER PHILIPS/DISCRETE 2SE D Q PBYR1035F PBYR1040F PBYR1045F L>b53T31 0022^43 T 0 jr - o z - n SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. Their electrical isolation makes

BLU53

Abstract: 2929 transistor
Contextual Info: N AMER PHIL^ PS / DISCRETE 86D 01126 ObE D • t>b53T31 00133bfci fl D 'T - 3 '3 ’ / ^ BLU53 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in m ilitary and professional wideband applications in the-30 to 4 0 0 M H z range.

diode h5e

Abstract: BUK552 BUK552-50A BUK552-50B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E E5E D MÊ t,b53T31 O O S O b a S 2 m PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-eftect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors fc>b53T31 002478*1 347 « A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES • Product specification L.7E D £ BFG25A/X PINNING Low current consumption 100 g A - 1 mA PIN DESCRIPTION Code: V11 • Low noise figure

Contextual Info: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbS3T31 0Q533bS 7 • BYP21 SERIES T- 03-/7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse leakage current, low forward voltage drop, ultra fast reverse recovery times, very low stored charge

metal rectifier diode 40A

Abstract: BYV18 BYV18-30 BYV18-35 BYV18-40A M0796
Contextual Info: I I N AMER PHILIPS/DISCRETE □ bE D ^53=131 G011E43 4 BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence o f stored charge . They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

BXC54-6

Abstract: BCX51 BCX52 BCX53 BCX54 BCX54-10 BCX54-16 BCX54-6 BCX55 BCX55-6
Contextual Info: bbSBTBl 0D15böb 3 AMER PHILIPS/DISCRETE BCX54 BCX55 BCX56 ObE D X 'X °i SILICON PLANAR EPITAXIAL T RA N SISTO R S Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

msab

Abstract: BAT93
Contextual Info: N AMER P H I L I P S / D I S C R E T E faTE T> bbSB^l 002^7=1 Philips Semiconductors 044 Product specification Schottky barrier diode FEATURES HAPX BAT93 QUICK REFERENCE DATA • Ultra-fast switching speed • Low forward voltage • Two-pin SMD package. DESCRIPTION

BUS24B

Abstract: BUS24C TO3 philips
Contextual Info: D EV ELO P M EN T DATA • h h S 3 T B l QGlflTS'l Ô ■ 11 T h is data sheet contains advance inform ation and specifications are subject to change w ithout notice. BUS24 SER IES N AMER P H I L I P S / D I S C R E T E SSE D _ r ~ 3 3-15“ SILICON DIFFUSED POW ER TRANSISTORS

DIODE T25 4 Jo

Abstract: DIODE T25 4 bo DIODE T25-4-bo
Contextual Info: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

BYV22-35

Abstract: m0044 BYV22 35 max3035 BYV22 BYV22-40A RTB 17 D-10587 BYV22-30
Contextual Info: N AMER^PHILIPS/DISCRETE TOD D • bb53131 GOlDSflM 3 BYV22 SERIES J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are

transistor t4B

Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor
Contextual Info: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is

U1020

Contextual Info: N AflER P H I L I P S / D I S C R E T E 25E D • bbS3T31 0032331 1 ■ bY32y SERIES A _ T -Q 3 -I7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended for use in chopper applications as well as in

Contextual Info: N AMPR PHILIPS/DISCRETE 2SE D • bbSB'IBl D Q n Q S 3 b ■ BUX47 BUX47A A T - 3 3 -/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D t.bS3T31 0 D 2 2 4 2 S T • A fcJYK 29 SLHItS T - O I- W ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times with very low stored charge and soft-recovery

Contextual Info: 2SE D N AMER PHILIPS/DISCRETE bt.53131 0011721 4 • BDT42;A BDT42B;C T -3 3 -*/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type. P-N-P complements are

BUZ15

Abstract: transistor buz IEC134 t03 package transistor pin dimensions
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ15 ObE t • btS3131 0 0 m S S 4 1 T '3 f'/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies