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    B4L1 Search Results

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    B4L1 Price and Stock

    Everlight Electronics Co Ltd 67-21S-NB3C-D4555B4L12835Z15-2T

    LED BLUE 450NM 2PLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 67-21S-NB3C-D4555B4L12835Z15-2T Digi-Reel 5,263 1
    • 1 $0.65
    • 10 $0.452
    • 100 $0.65
    • 1000 $0.25399
    • 10000 $0.23844
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    67-21S-NB3C-D4555B4L12835Z15-2T Cut Tape 5,263 1
    • 1 $0.65
    • 10 $0.452
    • 100 $0.65
    • 1000 $0.25399
    • 10000 $0.23844
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    67-21S-NB3C-D4555B4L12835Z15-2T Reel 4,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.21407
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    onsemi NB4L16MMNR2G

    IC TRANSLTR UNIDIRECTIONAL 16QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NB4L16MMNR2G Cut Tape 2,870 1
    • 1 $13.02
    • 10 $8.987
    • 100 $6.749
    • 1000 $6.51588
    • 10000 $6.51588
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    NB4L16MMNR2G Digi-Reel 2,870 1
    • 1 $13.02
    • 10 $8.987
    • 100 $6.749
    • 1000 $6.51588
    • 10000 $6.51588
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    NB4L16MMNR2G Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $6.51587
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    Avnet Americas NB4L16MMNR2G Reel 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $6.88076
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    Mouser Electronics NB4L16MMNR2G
    • 1 -
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    • 10000 $6.51
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    Newark NB4L16MMNR2G Reel 3,000
    • 1 -
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    • 10000 $6.21
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    Rochester Electronics NB4L16MMNR2G 2,925 1
    • 1 $7.24
    • 10 $7.24
    • 100 $6.81
    • 1000 $6.15
    • 10000 $6.15
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    Avnet Silica NB4L16MMNR2G 19 Weeks 3,000
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    EBV Elektronik NB4L16MMNR2G 20 Weeks 3,000
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    onsemi NB4L16MMNG

    IC TRANSLTR UNIDIRECTIONAL 16QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NB4L16MMNG Tube 268 1
    • 1 $13.11
    • 10 $9.057
    • 100 $13.11
    • 1000 $6.57938
    • 10000 $6.57938
    Buy Now
    Mouser Electronics NB4L16MMNG 222
    • 1 $9.8
    • 10 $7.81
    • 100 $6.67
    • 1000 $6.57
    • 10000 $6.57
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    Newark NB4L16MMNG Bulk 123
    • 1 -
    • 10 -
    • 100 $8.85
    • 1000 $7.16
    • 10000 $7.16
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    RS NB4L16MMNG Bulk 1
    • 1 $12.43
    • 10 $11.18
    • 100 $10.56
    • 1000 $10.56
    • 10000 $10.56
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    Rochester Electronics NB4L16MMNG 27,544 1
    • 1 $7.31
    • 10 $7.31
    • 100 $6.87
    • 1000 $6.21
    • 10000 $6.21
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    TME NB4L16MMNG 1
    • 1 $10.23
    • 10 $10.23
    • 100 $10.23
    • 1000 $8.83
    • 10000 $8.6
    Get Quote
    Avnet Silica NB4L16MMNG 19 Weeks 123
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    EBV Elektronik NB4L16MMNG 20 Weeks 123
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    NIDEC Components CF-TA-1DB4-L12

    SWITCH TOGGLE SPDT 50MA 48V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CF-TA-1DB4-L12 Bulk 14 1
    • 1 $9.97
    • 10 $9.97
    • 100 $7.421
    • 1000 $6.39544
    • 10000 $6.39544
    Buy Now

    onsemi NB4L16MMN

    IC TRANSLTR UNIDIRECTIONAL 16QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NB4L16MMN Tube
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    B4L1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS410LT3 r14525 MBRS410LT3/D PDF

    b4l1

    Abstract: 3B marking SMC 403-03 MBRS410LT3 SMC case 403 MBRS410L
    Text: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS410LT3 r14525 MBRS410LT3/D b4l1 3B marking SMC 403-03 MBRS410LT3 SMC case 403 MBRS410L PDF

    b10f1

    Abstract: b2a24 b4l1 B15Y b15e1 B17cc b23aa B15-B20 b12e24 B23AW
    Text: PIN NUMBER 43294-0240 PIN LENGTH 19.05/.750 PLATING 197 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-BNA197-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051


    Original
    PK-41661-001 -41661-BNA197-* -B2A197 -B3A197 -B4A197 -B5A197 -B6A197 -B7A197 -B8A197 -B9A197 b10f1 b2a24 b4l1 B15Y b15e1 B17cc b23aa B15-B20 b12e24 B23AW PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS410LT3 MBRS410LT3/D PDF

    M2KA

    Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A
    Text: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR


    Original
    YA-JA01 YA-HC05 YA-HC04 YA-JB01 YA-HC09 YA-HA01PB-FREE YA-HC09 YA-JA02 YA-HC18 YA-JB05 M2KA HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A PDF

    B4l1

    Abstract: SMC case 403
    Text: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS410LT3 B4l1 SMC case 403 PDF

    3B marking

    Abstract: No abstract text available
    Text: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS410LT3 3B marking PDF

    SMC case 403

    Abstract: MBRS410LT3 MBRS410LT3G MARKING MG diode b4l1
    Text: MBRS410LT3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS410LT3 MBRS410LT3/D SMC case 403 MBRS410LT3 MBRS410LT3G MARKING MG diode b4l1 PDF