B3B725S Search Results

1620CTR

Abstract: common anode MUR diodes 1610CTR MUR1610CTR MUR1620CTR diode 160a motorola 221A-06 MUR1605CT MUR1605CTR MUR1615CTR
Contextual Info: MOTOROLA fciME » • SEMICONDUCTOR TECHNICAL DATA b3b725S OOflbM'ib TbS ■MOT? MOTOROLA SC DIODES/OPTO M UR1605CTR M UR1610CTR M UR1615CTR M UR1620CTR S w itch m o d e Dual Ultrafast Power Rectifiers . . . designed for use in negative switching po w er supplies, inverters and as free w h e e l­

Motorola 417

Abstract: BAS116LT1 BAS116LT3 lp "sot23 marking motorola" a01102
Contextual Info: MOTOROLA SC DIODES/OPTO bûE ]> • b3b725S 00073^1 M*îT ■■ M0T7 Order this data sheet by BAS116LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAS116LT1 Sw itching Diode Motorola Preferred Device This switching diode has the following features:

ANSI Y14.5

Contextual Info: MOTOROLA SC LOGIC SS E D b3b725S D0Ô4MSÛ L Order this data sheet b y MC74F269/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 74F269 Advance Information 8-Bit Bidirectional Binary Counter J S U F F IX C E R A M IC C A S E 759-01 The M C74F269 is a fully synchronous 8-stage up/down counter featuring a

2N6147

Abstract: Case 175-03 376 motorola 2N5571
Contextual Info: I w TOROLA I ^ SC -cTiODES/OPTOJ 636725S MOTOROLA SC »T|b3b725S OOT'IDOD 1 <DIODES/OPTO 0 1E 79000 D T " * S ' - / 'i r T r ia c s Silicon Bidirectional Triode Thyristors . . . designed prim a rily fo r industrial and m ilitary applications for the control of ac

H11AV1

Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Contextual Info: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs

BB209

Abstract: MV109 mv209
Contextual Info: MOTOROLA SC O I O D E S / O P T O Ï !' 6 36.7255 MOTOROLA ~ SC 34 ]>F|b3b725S OOBfllOS S | <D I O D E S / O P T O > 3 ^c 38105 Q £ *7' / ? SILICON TUNING DIODE DICE continued MVC109 DIE NO. LINE SOURCE — DV33 This die provides performance equal to or better than that of

DM 0265 R

Abstract: CR708 MCR70
Contextual Info: M O T O R O L A SC D IO DE S/O PT O 25E D b3b725S OO&llbM S • ‘T ^ 2 , 5 " - / 3 MCR703 thru S ilic o n Controlled Rectifiers M CR708 Reverse B lockin g Triode Thyristors . P N P N devices designed for high volum e, low cost consum er applications such as

MFE3003

Abstract: aade MFEC3003
Contextual Info: ~3M MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE^b3b725S DIODES/OPTO ODBfiQ4ti 4 | ~ 34-C 3 8 0 4 6 r - FIELD-EFFECT TRANSISTORS DICE (continued) MFEC3003 DIE NO. LINE SOURCE — DFM115 This die provides performance equal to or better than that of

1N45A

Abstract: 1N4765
Contextual Info: MOTOROL A SC iD IO DE S/O PTO} lb DE|b3b725S 0D7 Ö027 2 | - r - / j - ¿>1 1N4370 thru 1N4372 See Page 4-4 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N4549 thru 1N4564 See Page 4-23 LOW-LEVEL T E M P E R A T U R E -C O M P E N SA T E D ZEN E R R EF E R E N C E D IO D E S

S353

Contextual Info: MOTOROLA SC DIODES/OPTO h4E D • b3b725S DOflSBMM fl'R * 1 1 0 1 7 SECTION 4.1.4 DATA SHEETS TRANSIENT VOLTAGE SUPPRESSORS — continued Section 4.1.4.1 Axial Leaded — continued SECTION 4.1.4.1.3 1500 WATT PEAK POWER M U L T IP L E P A C K A G E Q U A N T IT Y (M P Q )

Contextual Info: MOTOROLA SC D I O D E S / O P T O BTE ]> Bi b3b725S Q0Ö2113 M B1 M0T 7 13 MOTOROLA SEMICONDUCTOR r TECHNICAL DATA MCR2323H,AH MCR2324H,AH MCR2326H,AH MCR2328H,AH M M urn¡a Discrete Military Operation Processed per MIL-S-19500/276 Silicon Controlled Rectifiers

OPTO-34

Contextual Info: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 <DIODES/OPTO MMCF2906, MMCF2906A MMCF2907, MMCF2907A dF | b3b725S 34C SILICON) 38185 ^ ^ DD3Û1ÔS D ^ FLIP -C H IP PIMP S W ITC H A N D A M P L IF IE R T R A N S IS T O R S F lip 'C h ip — General purpose P N P sw itching and a m p lifie r transistor

BZu 120

Contextual Info: MOTOROLA Order this document by MMBD2837LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc Vr 30 50 Vdc >FM 450 300 mAdc io 150 100 mAdc Symbol

Contextual Info: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device

BYT261PIV400M

Contextual Info: M OTOROLA Order this document by BYT261PIV-400M/D SEMICONDUCTOR TECHNICAL DATA U ltra fa s t Power R ectifiers BYT261PIV-400M D u al high v o lta g e re ctifie rs su ited fo r S w itc h m o d e P o w e r Supplies and other power converters. • Very Low Reverse Recovery Tim e

12v to 220 v ac inverter

Abstract: MHPM7A30A60B Bridge rectifier BR 156 vqe 23 MHPM7A30E60DC3 12 volt dc to 220 volt ac inverter schematic Motorola diode book BT Motorola dlaob
Contextual Info: MOTOROLA Order this documenti by MHPM7A30A60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7A30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase

fw sot-23

Contextual Info: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA S w itc h in g D io d e MMBD6050LT1 3 o CATHODE H— o1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc lFM surge 500 mAdc Symbol

Contextual Info: M O T O R O L A SC D I O D E S / O P T O 3*ì£ ]> b 3 b 7 2 S S GOflSlOT 2 Ö M 0 T 7 T 'os-ll MOTOROLA SEMICONDUCTOR cz TECHNICAL DATA MBR6391HX, HXV Processed per MIL-S-19500/553 Schottky Power Rectifier Discrete Military Operation . . .designed for low-voltage, high-frequency inverters, free wheeling diodes and polarity

pq3467

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device fïïl fÌ3Ì [Ì2I ITTI fipl Í71 IT XoJ Lr\J PNP ,r y i r y i UJ L2J IÌJ LU L i] [è] E MAXIMUM RATINGS Rating Symbol Value Unit VCEO -40

MOC8060

Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter

mpf102

Abstract: mpf102 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C

b2045

Abstract: B2045 motorola B2035 2045c Single Schottky diode b2045 2N6277
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

b745

Abstract: B745 MOTOROLA b735 B735 MOTOROLA mbr745
Contextual Info: MOTOROLA Order this document by MBR735/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR735 MBR745 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • •

Contextual Info: MOTOROLA Order this document by MPXS4115A/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information Altim eter or Barometer Applications Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The Motorola MPXS4115A series Manifold Absolute Pressure MAP sensor for