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    B2VR Price and Stock

    Microchip Technology Inc APT6011B2VRG

    MOSFET N-CH 600V 49A T-MAX
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    DigiKey APT6011B2VRG Tube 30
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    Avnet Americas APT6011B2VRG Tube 26 Weeks 30
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    Mouser Electronics APT6011B2VRG
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    Newark APT6011B2VRG Bulk 30
    • 1 $25.73
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    • 100 $22.22
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    Microchip Technology Inc APT6011B2VRG
    • 1 $25.73
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    • 100 $22.22
    • 1000 $20.38
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    TME APT6011B2VRG 1
    • 1 $37.2
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    NAC APT6011B2VRG Tube 14
    • 1 $23.86
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    Richardson RFPD APT6011B2VRG 30
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    Avnet Silica APT6011B2VRG 28 Weeks 30
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    EBV Elektronik APT6011B2VRG 27 Weeks 30
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    Master Electronics APT6011B2VRG
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    • 10 $31.31
    • 100 $22.41
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    Microchip Technology Inc APT5014B2VRG

    MOSFET N-CH 500V T-MAX
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    DigiKey APT5014B2VRG Tube
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    Microchip Technology Inc APT5010B2VRG

    MOSFET N-CH 500V 47A T-MAX
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    DigiKey APT5010B2VRG Tube 30
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    • 100 $18.41
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    Avnet Americas APT5010B2VRG Tube 26 Weeks 30
    • 1 $18.41
    • 10 $18.41
    • 100 $15.89
    • 1000 $14.95
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    Mouser Electronics APT5010B2VRG 43
    • 1 $18
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    • 100 $16.9
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    Newark APT5010B2VRG Bulk 30
    • 1 $18.41
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    Microchip Technology Inc APT5010B2VRG
    • 1 $18.41
    • 10 $18.41
    • 100 $15.89
    • 1000 $14.59
    • 10000 $14.11
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    TME APT5010B2VRG 1
    • 1 $26.51
    • 10 $21.18
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    NAC APT5010B2VRG Tube 20
    • 1 $17.09
    • 10 $17.09
    • 100 $15.74
    • 1000 $14.59
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    Avnet Silica APT5010B2VRG 28 Weeks 30
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    EBV Elektronik APT5010B2VRG 27 Weeks 30
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    Master Electronics APT5010B2VRG
    • 1 $17.59
    • 10 $16.16
    • 100 $14.77
    • 1000 $14.33
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    Microchip Technology Inc APT20M18B2VRG

    MOSFET N-CH 200V 100A T-MAX
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    DigiKey APT20M18B2VRG Tube 30
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    • 100 $21.59
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    Avnet Americas APT20M18B2VRG Tube 26 Weeks 30
    • 1 $21.59
    • 10 $21.59
    • 100 $18.65
    • 1000 $17.53
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    Mouser Electronics APT20M18B2VRG
    • 1 $21.59
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    Newark APT20M18B2VRG Bulk 30
    • 1 $21.59
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    • 100 $18.65
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    Microchip Technology Inc APT20M18B2VRG
    • 1 $21.59
    • 10 $21.59
    • 100 $18.65
    • 1000 $17.11
    • 10000 $16.55
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    TME APT20M18B2VRG 1
    • 1 $31.23
    • 10 $24.84
    • 100 $24.84
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    NAC APT20M18B2VRG Tube 17
    • 1 $20.03
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    • 100 $18.45
    • 1000 $17.1
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    Master Electronics APT20M18B2VRG
    • 1 $35.98
    • 10 $25.4
    • 100 $19.48
    • 1000 $18.9
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    Microchip Technology Inc APT50M80B2VRG

    MOSFET N-CH 500V 58A T-MAX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT50M80B2VRG Tube 30
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    • 100 $14.96567
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    Find more B2VR price and stock on Findchips.com

    B2VR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT8024B2VFR

    Abstract: APT8024B2VR APT8024LVR
    Text: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR

    APT12060L

    Abstract: No abstract text available
    Text: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT12060B2VR APT12060LVR O-264 O-264 APT12060 O-247 APT12060L

    APT10050B2VFR

    Abstract: APT10050LVFR
    Text: APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10050B2VFR APT10050LVFR O-264 O-264 APT10050 O-247 APT10050B2VFR APT10050LVFR

    diode 132

    Abstract: No abstract text available
    Text: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247 diode 132

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M18B2VR APT20M18LVR O-264 O-264 APT20M18 O-247

    APT50M85B2VR

    Abstract: APT50M85LVR
    Text: B2VR APT50M85LVR 500V 56A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M85B2VR APT50M85LVR O-264 O-264 APT50M85B2VR O-247 APT50M85LVR

    diode 304

    Abstract: 11200-1 B2VR 72 RG
    Text: B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40B2VR APT30M40LVR O-264 APT30M40 O-247 diode 304 11200-1 B2VR 72 RG

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M85B2VR APT50M85LVR O-264 O-264 APT50M85 O-247

    APT6011B2VR

    Abstract: No abstract text available
    Text: B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VR APT6011LVR O-264 O-264 APT6011 O-247 APT6011B2VR

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247

    Untitled

    Abstract: No abstract text available
    Text: B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M18B2VR A20M18LVR O-264 O-264 APT20M18B2VR O-247

    APT12060B2VR

    Abstract: APT12060LVR
    Text: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT12060B2VR APT12060LVR O-264 O-264 APT12060 O-247 APT12060B2VR APT12060LVR

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247

    ED 58A

    Abstract: No abstract text available
    Text: B2VR APT50M80LVR 500V 58A 0.080W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VR APT50M80LVR O-264 O-264 APT50M80 O-247 ED 58A

    050590

    Abstract: APT10040B2VR APT10040LVR
    Text: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247 050590 APT10040B2VR APT10040LVR

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT10040LVR 1000V 25A 0.400W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10040B2VR APT10040LVR O-264 O-264 APT10040 O-247

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VR APT6011LVR O-264 O-264 APT6011B2VR O-247

    MAX1370

    Abstract: APT10M09LVR
    Text: B2VR APT10M09LVR 100V 100A 0.009W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M09B2VR APT10M09LVR O-264 O-264 APT10M09 O-247 MAX1370 APT10M09LVR

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT12060B2VR APT12060LVR O-264 O-264 APT12060 O-247

    A20M18LVR

    Abstract: APT20M18B2VR
    Text: B2VR A20M18LVR 200V 100A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT20M18B2VR A20M18LVR O-264 O-264 APT20M18B2VR O-247 A20M18LVR

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VR APT6011LVR O-264 O-264 APT6011B2VR O-247