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    B13 TRANSISTORS Search Results

    B13 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B13 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278


    Original     		PDF 2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 96-618-B13) 96-750-D13)

    b13 smd

    Abstract: marking B12 smd marking b12 b14 smd 2SC4173 2SC417 30V30
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4173 Features High gain bandwidth product: fT=200MHz min. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage


    Original     		PDF 2SC4173 200MHz 150mA 500mA -20mA b13 smd marking B12 smd marking b12 b14 smd 2SC4173 2SC417 30V30

    SMD SOT23 b12

    Abstract: b13 smd b14 smd smd marking b12 ON B14 PT-200 2SC3739 marking B14 SOT
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SC3739 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 High gain bandwidth product: fT=200MHz. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF 2SC3739 OT-23 200MHz. -20mA 500mA 150mA SMD SOT23 b12 b13 smd b14 smd smd marking b12 ON B14 PT-200 2SC3739 marking B14 SOT

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3739 SOT-23-3L TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage


    Original     		PDF OT-23-3L 2SC3739 OT-23-3L 150mA 500mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. EMITTER 2. BASE 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current


    Original     		PDF OT-23-3L OT-23-3L 2SC3739 150mA 500mA 500mA,

    Marking B12

    Abstract: B12 diode 2SA1464 2SC3739 B14 sot23
    Text: 2SC3739 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings Symbol V CEO V CBO V EBO


    Original     		PDF 2SC3739 2SA1464 OT-23 350us, Marking B12 B12 diode 2SA1464 2SC3739 B14 sot23

    75150 PC

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings


    Original     		PDF 2SC3739 2SA1464 OT-23 40Vdc 150NCHES 350us, 75150 PC

    PIN CONFIGURATION OF THREE LEGS VARIABLE capacitor

    Abstract: diode cross reference
    Text: RF2512 UHF TRANSMITTER Typical Applications • Single- or Dual-Channel LO Source • 433/868/915MHz ISM Band Systems • FM/FSK Transmitter • Wireless Security Systems • Wireless Data Transmitters U F pg O ra R de d N P E ro W du ct D R ES F2 51 IG 4/ N


    Original     		PDF RF2512 433/868/915MHz RF2512 915MHz 433MHz 868MHz PIN CONFIGURATION OF THREE LEGS VARIABLE capacitor diode cross reference

    QFP32

    Abstract: STV1389AQ STV1601A
    Text: STV1389AQ CABLE DRIVER FOR DIGITAL TRANSFER . . . . . 1 DIFFERENTIAL INPUT, 3 DIFFERENTIAL OUTPUTS SUFFICIENT DRIVE CAPABILITY FOR A 300m LENGTH COAXIAL CABLE STABILITY DUE TO MINIMAL WAVEFORM DISTORTION BIPOLAR SILICON MONOLITHIC IC APPLICATIONS DATA TRANSFER BETWEEN DIGITAL SIGNAL PROCESSING EQUIPMENT


    Original     		PDF STV1389AQ QFP32 STV1389AQ QFP32 STV1601A

    B13 transistors

    Abstract: No abstract text available
    Text: Die no. B-13 PNP silicon transistor These are epitaxial planar PN P silicon transistors. TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCE0 = 80 V min at 1.0 mA • . .


    OCR Scan     		PDF MPS-A56 00MHz 50MHz B13 transistors

    transistor c37

    Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
    Text: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22


    OCR Scan     		PDF OT-23) OT-323) OT-89) 2N2925 2N3703 2N3704 2N3706 2N3711 2N3860 2N3903 transistor c37 a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11

    1DI200H-055

    Abstract: No abstract text available
    Text: COLLMER SEHICONDUCTOR INC MÔE D • E S a ß ? 1^ O GD lb D1? bS7 « C O L BIPOLAR TRANSISTORS Ratings and Specifications 53 ^ T-v?,- 600 volts class power transistor modules for DC chopper • P o w e r t r a n s is t o r s a n d free w h e e ls are built in to o n e p ac ka ge .


    OCR Scan     		PDF 1DI50H-055 1DI50K-055 1DI75F-100 1DI100E-100 1DI100F-100 1DI150E-100 1DI150F-100 1DI200H-055

    1DI200H-055

    Abstract: DIODE B14 max 550 transistor B14 diode on semiconductor 1DI200h055 DC chopper 1DI100F100 1DI100E100 1DI150 1DI150H055
    Text: COLLMER SEMICONDUCTOR INC WM SSaßTia OOOlbO*} bS7 * C O L 4BE D BIPOLAR TRANSISTORS Ratings and Specifications ^ @ 3 600 v olts class pow er tra n sisto r m odules for DC chopper • P o w e r t r a n s is t o r s a n d fr e e w h e e ls a re b u ilt in t o o n e p a c k a g e .


    OCR Scan     		PDF S53B712 1DI50H-055 1DI50K-055 1DI75E-055 1DI75F-055 1DI50F-100 1DI75E-100 1DI75F-100 1DI100E-100 1DI100F-100 1DI200H-055 DIODE B14 max 550 transistor B14 diode on semiconductor 1DI200h055 DC chopper 1DI100F100 1DI100E100 1DI150 1DI150H055

    2M5087

    Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
    Text: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.


    OCR Scan     		PDF 100nA 200mA 2N2925 2N3711 MPS3711 2N3860 2N5088 160MHz 100mA 2M5087 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp

    2N3906 EBC

    Abstract: 2N4403 EBC 2N3906EBC
    Text: Bipolar transistors-US/European series PNP transistors Table 5 General purpose small signal amplifiers Part no. 2N5087 Term arrmnt 1 23 EBC B VCbo B V c e o B V EbO •C B0 V CB h FE I c &V ce VCE &VBE @ lc C 0 b »T @ ' c sat (sat) max min min min min


    OCR Scan     		PDF 2N5087 2N4403 MPS6562 MPS-A56 2N3906 EBC 2N4403 EBC 2N3906EBC

    QCA50AA100

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA50AA100 U L ;E 76102 M is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA50AA100 QCA50AA100 E76102 15Crt

    RM3 transistors

    Abstract: B13 transistors
    Text: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10


    OCR Scan     		PDF B21oE2 B1oE20oE2 RM3 transistors B13 transistors

    A5169

    Abstract: BF256 BF256C BF 256 BF256B BF256A
    Text: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.


    OCR Scan     		PDF fl235bG5 8000-A Q62702-F413 68000-A5169 Q62702-F733 23SbOS QGQ4472 A5169 BF256 BF256C BF 256 BF256B BF256A

    Untitled

    Abstract: No abstract text available
    Text: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e e ls are built into o ne package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter Devic« ly p 'j Veso i V geo VcEO Volts Volts


    OCR Scan     		PDF 1DI50H-055 1DI50K-055 1DI75E-055 1DI50F 1DI50H-120 1DI75F 1I3I75H 0Q0372L,

    D44h7

    Abstract: D44H12
    Text: 3875081 G E SOLID _ STATE- DI n 1C 1 QHAf i DE 1 3 ñ 7 S D ñ l □□nDñfe, h i " D44H Series NPN POWER TRANSISTORS 30 -8 0 VOLTS 10 AMP, 50 WATTS >COMPLEMENTARY TO THE D45H SERIES The General Electric D44H is a power transistor designed for various specific and general purpose applications, such as:


    OCR Scan     		PDF 300ms D44h7 D44H12

    Untitled

    Abstract: No abstract text available
    Text: i„ /= 7 SGS-THOMSON ^7 liiiilDÊlEiOIlLiÊTrMMDigi S T V 1 3 8 9 A Q CABLE DRIVER FOR DIGITAL TRANSFER • 1 DIFFERENTIAL INPUT, 3 DIFFERENTIAL OUTPUTS ■ SUFFICIENT DRIVE CAPABILITY FOR A 300m LENGTH COAXIAL CABLE ■ STABILITY DUE TO MINIMAL WAVEFORM


    OCR Scan     		PDF QFP32 STV1389AQ STV1389AQ 389V-01 200mV/div 10/16V 150fiL

    80487

    Abstract: D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D929 Q62702-D930 BD 202 transistors
    Text: 2SC T> U fl535b05 QQ04373 7 M S I E 6 . PNP Silicon Planar Transistors -T-33'rt BD 487 _BD 488 SIEMENS AKTIENGESELLSCHAF 04373 B D 4 8 7 and B D 4 8 8 are epitaxial P N P silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The


    OCR Scan     		PDF Q62702-D929 Q62702-D930 rcaMS25Â S35b05 DQQ437b 80487 D487 BD PNP IBM 487 transistor D929 BD488 Q62702-D930 BD 202 transistors

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA50AA100 E76102 QCA50AA10 I20i------------

    dc chopper circuit

    Abstract: DC chopper dc to dc chopper DIODE B12 CHopper DC M206 vce 1200 and 5 amps transistor diode chopper power transistor motor control wheel
    Text: 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s fo r D C c h o p p e r • P o w er transistors and free w h e e ls are b uilt into one package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter D k v k ; h ly p u I Vcso


    OCR Scan     		PDF 1DI50K DI75E 1DI75I 1DI200t-Obà 1DI200K 10pper 1DI50L 1DI501- 1DI50H-120 1DI75F-120 dc chopper circuit DC chopper dc to dc chopper DIODE B12 CHopper DC M206 vce 1200 and 5 amps transistor diode chopper power transistor motor control wheel