B-976 TRANSISTOR Search Results

B-976 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
LP395Z/LFT1	Texas Instruments	Ultra Reliable Power Transistor 3-TO-92
LM395T/NOPB	Texas Instruments	Ultra Reliable Power Transistor 3-TO-220 0 to 125
ULN2003ANS	Texas Instruments	High-Voltage, High-Current Darlington Transistor Arrays 16-SO
ULQ2003ADRG4	Texas Instruments	Darlington Transistor Arrays 16-SOIC
LP395Z/NOPB	Texas Instruments	Ultra Reliable Power Transistor 3-TO-92 -40 to 125

B-976 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Q4431 Contextual Info: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay	OCR Scan	235bQS Q4431 T-33-31 100oC; fl235bQS QQQ4432 j-33-31 BD976 BD978 BD980	PDF
74LS29 Contextual Info: TYPES SN54LS295B, SN74LS295B 4-BIT RIGHT-SHIFT LEFT-SHIFT REGISTERS WITH 3-STATE OUTPUTS O C T O B E R 1 976— R E V IS E D D E C E M B E R SN 54LS295B 'LS296B Offers Three Times the Sink-Current Capability of 'LS295A I OR W PACKAGE S N 7 4 L S 2 9 5 B . . . D, J O R N P A C K A G E	OCR Scan	SN54LS295B, SN74LS295B LS296B LS295A 54LS295B 74LS29	PDF
TVU0.5B Abstract: B-976 transistor ASI10642 transistor 5200 976 transistor 254000 Contextual Info: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for UHF and Television Band IV & V Applications. PACKAGE STYLE .205 4L STUD D FEATURES: A • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System	Original	8-32UNC 8-32U TVU0.5B B-976 transistor ASI10642 transistor 5200 976 transistor 254000	PDF
D965 Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430 Contextual Info: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay	OCR Scan	235bQS Q62702-D963 Q62702-D965 Q62702-D967 fl23SbOS QQQ4432 0443Z BD976 T-33-31 BD980 D965 b098 bd98 d965 hfe BD980 Q62702-D967 QQQ4430	PDF
ASI10642 Contextual Info: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System	Original	8-32UNC ASI10642	PDF
ASI10633 Abstract: MLN2030SS 254000 Contextual Info: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN2030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V PDISS O O -65 C to +200 C	Original	MLN2030SS MLN2030SS 8-32UNC ASI10633 ASI10633 254000	PDF
MRF750 Contextual Info: MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: D The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 3 4 A 2 C 1 FEATURES INCLUDE: B • High Power Gain • Infinite VSWR F G E	Original	MRF750 MRF750	PDF
ASI10631 Abstract: MLN2027SS Contextual Info: MLN2027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2027SS is Designed for Class A Linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 6.0 dB at 0.5 W/2.0 GHz • Omnigold Metalization System	Original	MLN2027SS MLN2027SS 8-32U ASI10631	PDF
MRF627 Abstract: MRF-627 Contextual Info: MRF627 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF627 is Designed for Class C, FM Land Mobile and FM Base Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System	Original	MRF627 MRF627 MRF-627	PDF
ULBM05 Contextual Info: ULBM05 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM05 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System	Original	ULBM05 ULBM05 ASI10674	PDF
5B TRANSISTOR Abstract: ASI10642 Contextual Info: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC	Original	8-32UNC ASI10642 5B TRANSISTOR ASI10642	PDF
ASI10631 Abstract: MLN2027SS Contextual Info: MLN2027SS NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The ASI MLN2027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 OC	Original	MLN2027SS MLN2027SS 8-32UNC ASI10631 ASI10631	PDF
976 transistor Abstract: ASI10625 MLN1030SS Contextual Info: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V inches / mm inches / mm	Original	MLN1030SS MLN1030SS 8-32UNC ASI10625 976 transistor ASI10625	PDF
976 transistor Abstract: ASI10674 Contextual Info: ULBM0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L PILL The ASI ULBM0.5 is Designed for D FEATURES: • • • Omnigold Metalization System A C B MAXIMUM RATINGS F IC 0.4 A VCBO 28 V VCEO 12 V G 4.0 V VEBO O PDISS 2.5 W @ TC = 25 C	Original	ASI10674 976 transistor ASI10674	PDF

CBSL2SS Abstract: ASI10868 8-32UN Contextual Info: CBSL2SS NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI CBSL2SS is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. D A C FEATURES: • Pg = 9.0 dB min. @ 960 MHz • P1dB = 2.0 Watts min. at 960 MHz	Original	8-32UN ASI10868 CBSL2SS ASI10868	PDF
MRF838A Abstract: MRF838 Contextual Info: MRF838A NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz. D 3 4 A 2 C 1 FEATURES INCLUDE: B G • Gold Metallization • Emitter Ballasting	Original	MRF838A MRF838A 8-32UNC MRF838	PDF
MLN1027SS Abstract: ASI10621 Contextual Info: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SS is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 11 dB at 0.5 W/1.0 GHz • Omnigold Metalization System	Original	MLN1027SS MLN1027SS 8-32U ASI10621 ASI10621	PDF
MLN1030SS Abstract: 832u ASI10625 Contextual Info: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030SS is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 10 dB at 1.0 W/1.0 GHz • Omnigold Metalization System	Original	MLN1030SS MLN1030SS 8-32U ASI10625 832u ASI10625	PDF
MLN2030SS Abstract: ASI10633 Contextual Info: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2030SS is Designed for Class A linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 10 dB at 1.0 W/2.0 GHz • Omnigold Metalization System	Original	MLN2030SS MLN2030SS 8-32UNC ASI10633	PDF
ASI10641 Contextual Info: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5A is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V VEBO 3.5 V J inches / mm	Original	8-32UNC ASI10641 ASI10641	PDF
ASI10621 Abstract: MLN1027SS Contextual Info: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS 10 A IC MAXIMUM MINIMUM DIM inches / mm inches / mm	Original	MLN1027SS MLN1027SS 8-32UNC ASI10621 ASI10621	PDF
TVU0.5A Abstract: B-976 transistor ASI10641 Contextual Info: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5A is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 9.5 dB at 0.5 W/860 MHz • Omnigold Metalization System	Original	8-32UNC ASI10641 TVU0.5A B-976 transistor ASI10641	PDF
H83069RF Abstract: TDA1 589 Nippon capacitors Contextual Info: REJ09B0006-0400H 16 H8/3069RF-ZTAT TM Hardware Manual Renesas 16-Bit Single-Chip Microcomputer The revision list can be viewed directly by clicking the title page. The rivision list summarizes the locations of revisions and additions. Details should always	Original	REJ09B0006-0400H H8/3069RF-ZTAT 16-Bit H8/3069RF-ZTATTM H83069RF TDA1 589 Nippon capacitors	PDF
LVDM976 Abstract: LVDM977 SN75976ADGG SN75LVDM976 SN75LVDM976DGG SN75LVDM976DGGR SN75LVDM977 Contextual Info: SN75LVDM976 SN75LVDM977 www.ti.com SLLS292B – APRIL 1998 – REVISED JANUARY 2000 9-CHANNEL DUAL-MODE TRANSCEIVERS FEATURES • • • • • • • • • • DGG PACKAGE TOP VIEW 9 Channels for the Data and Control Paths of the Small Computer Systems Interface (SCSI)	Original	SN75LVDM976 SN75LVDM977 SLLS292B LVDM976) LVDM977) 20-Mil SN75976ADGG LVDM976 LVDM977 SN75976ADGG SN75LVDM976 SN75LVDM976DGG SN75LVDM976DGGR SN75LVDM977	PDF

B-976 TRANSISTOR Search Results

B-976 TRANSISTOR Result Highlights (5)

B-976 TRANSISTOR Datasheets Context Search

Q4431

74LS29

TVU0.5B

D965

ASI10642

ASI10633

MRF750

ASI10631

MRF627

ULBM05

5B TRANSISTOR

ASI10631

976 transistor

976 transistor

CBSL2SS

MRF838A

MLN1027SS

MLN1030SS

MLN2030SS

ASI10641

ASI10621

TVU0.5A

H83069RF

LVDM976