B 595 TRANSISTOR SCHEMATIC Search Results

transistor d 1710

Abstract: v5856 circuit 5 lo 265 MD59-0062
Contextual Info: Features GND Absolute Maximum Ratings 1 Parameter 6 Volts IF Input Level 0 dBm LO In Power 0 dBm Operating Temperature -55°C to +100°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage. GND

b 595 transistor schematic

Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W
Contextual Info: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration

MD59-0062

Abstract: FQFP-N-20
Contextual Info: Features GND MIX OUT GND LO IN 20 GND 1 DRVR IN LOA VDD GND GND DRVR VDD1 GND GND M/A-COM’s MD59-0062 is a fully integrated upconverter / driver IC that includes an IF amplifier, upconverting mixer, two stage driver amplifier and LO buffer in a miniature 4 mm plastic FQFP-N package.

TD62592AP

Contextual Info: T O SH IB A TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight

Contextual Info: WhHì H E W L E T T AUHM PA C K A R D Avantek Products Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade

Avantek uto 512

Abstract: utc 222 Avantek amplifier UTC UTC 494 AVANTEK AVANTEK utc Avantek, Inc
Contextual Info: AVANTEK INC MME @AVANTEK imiHbfc. 0 007 ^43 b 5 ¡AVA • I * UTO/UTC 222 Series Thin-Flim Cascadable Amplifier Module 20 to 200 MHz FEATURES APPLICATIONS • • • • • • • High Gain IF Stages Frequency Range: 20 to 200 MHz High Gain: 29.5 dB Typ

MIL-STD-2015

Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
Contextual Info: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low

Crss RF

Contextual Info: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 2/18/03 MAPLST2122-060WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.

transistor 10mhz 60w

Abstract: 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1
Contextual Info: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 MAPLST2122-060CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.

MACOM MMIC RF AMP

Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
Contextual Info: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that

MRF16006

Contextual Info: Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz

ferroxcube 56-590-65

Abstract: ferroxcube ferrite beads transistor 2439 MRF454 FERROXCUBE VK200 vk200 VK200 FERRITE VK200-20/4B vk200-20 1817pF
Contextual Info: Order this document by MRF454/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF454 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —

MRF428

Abstract: arco 466 ferroxcube ferrite beads 170 680 pF arco 469 1N4997 2204B ferroxcube 56-590-65 arco 469 332 Ic 8 pin
Contextual Info: Order this document by MRF428/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF428 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

ADC 50 Ghz

Abstract: MRF16030
Contextual Info: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

transistor MRF321

Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

j687

Abstract: MRF323 VK200 case 244-04
Contextual Info: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

ferroxcube 56-590-65

Abstract: UT25 coaxial 2N6439 UT25 VK200
Contextual Info: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

MRF448

Abstract: 1N4997 2643021801 EQUIVALENT FOR J175
Contextual Info: Order this document by MRF448/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF448 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

Contextual Info: TOSHIBA TD62591~594AP,595-598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight

Contextual Info: That H E W L E T T fttfC J P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade

adc 809

Abstract: MRF429 arco 469 1N4997 EQUIVALENT FOR J175 TRANSISTOR j115 Transistor MRF429
Contextual Info: Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

transistor MRF317

Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc
Contextual Info: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

AVANTEK utc 211

Contextual Info: Whnl H E W L E T T Wi!HÆP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade

ultrasonic bond

Abstract: schematic WELDER Gunn Diode schematic WELDER capacitor M541 varactor beam lead thermal conductive teflon mesa similar
Contextual Info: Application Note M an A M P com pany Bonding and Handling Procedures for Chip Diode Devices M541 V 2.00 Discussion Microstrip Packages and Chip Carriers Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last