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    AWT6252 Price and Stock

    Rochester Electronics LLC AWT6252RM7P8

    IC POWER 2 CIRCUIT
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    DigiKey AWT6252RM7P8 Bulk 5,000 160
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    • 1000 $1.88
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    Rochester Electronics LLC AWT6252M7P8

    IC POWER 2 CIRCUIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AWT6252M7P8 Bulk 2,500 160
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    • 1000 $1.88
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    ANADIGICS Inc AWT6252RM7P8

    AWT6252RM7P8
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    Verical AWT6252RM7P8 5,000 177
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    • 1000 $1.925
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    Rochester Electronics AWT6252RM7P8 5,000 1
    • 1 $1.81
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    • 100 $1.7
    • 1000 $1.54
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    ANADIGICS Inc AWT6252M7P8

    AWT6252M7P8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical AWT6252M7P8 2,500 177
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.925
    • 10000 $1.925
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    Quest Components AWT6252M7P8 2
    • 1 $3.6225
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    Rochester Electronics AWT6252M7P8 2,500 1
    • 1 $1.81
    • 10 $1.81
    • 100 $1.7
    • 1000 $1.54
    • 10000 $1.54
    		Buy Now

    AWT6252 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AWT6252 Anadigics Original PDF
    AWT6252M7P8 Anadigics Original PDF

    AWT6252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    QUALCOMM

    Abstract: No abstract text available
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		AWT6252 AWT6252 QUALCOMM PDF

    AWT6252

    Abstract: AWT6252M7P8
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 39% • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V +2.75 V min over temp


    Original     		AWT6252 AWT6252 AWT6252M7P8 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • High Efficiency: 39% • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V +2.75 V min over temp


    Original     		AWT6252 AWT6252 PDF

    eel 16 2005

    Abstract: AWT6252 AWT6252M7P8
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.6 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		AWT6252 AWT6252 eel 16 2005 AWT6252M7P8 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWT6252 IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • High Efficiency: 41% - Low Bias Mode 39% - High Bias Mode • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		AWT6252 AWT6252 PDF

    signal generator

    Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
    Text: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed


    Original     		AWT6252 AWT6274 AWT6275 AWT6276 signal generator AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series PDF