AVION Search Results

1K29

Abstract: mox-750
Contextual Info: Mini-Mox Features Precision Thick Film Axial Terminal High Voltage/High Resistance B A Ohmite Series Applications • Avionics • Medical electronics • High gain feedback applications • Current pulse limiters • Vacuum and space application 1.5" typ.

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

960-1215 MHz transistor 20W

Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Contextual Info: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.

MS2205

Contextual Info: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL M220 Epoxy Sealed DESCRIPTION:

BLA1011-10

Abstract: 200B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

MDS800

Contextual Info: R.3.110599 MDS800 800 Watts, 50 Volts, Pulsed Avionics 1090 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz, with the pulse

pressure sensor response time ms

Abstract: MEDICAL LOW PRESSURE SENSOR 1210 Pressure Sensor
Contextual Info: Model 23 Low Pressure PC Board Mountable Pressure Sensor Medical Instrumentation 0-1 PSI HVAC 0-100 mV Output Low Cost Factory Automation Process Control Avionics Temperature Compensated Air Flow Management DESCRIPTION The Model 23 is a temperature compensated, piezoresistive

PH1090-550S

Contextual Info: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications

1035 transistor

Abstract: M.P transistor
Contextual Info: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

55ay

Abstract: DME150
Contextual Info: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven

Temic Semiconductors

Abstract: CECC9000
Contextual Info: Temic S e m i c o n d u c t o r s Application-Specific ICs for Aerospace & Military At TEMIC Semiconductors, we provide a full range of components for the demanding environ­ ment of the space, defense, and avionics industries. Ensuring a constant renewal of our commitment to

dg908

Contextual Info: B DG908/909 8-Channel/Dual 4-Channel Fault Protected CMOS Analog Multiplexers FEATURES • All Channels OFF When Power OFF, For Analog Signals Up to ±2 5 V BENEFITS APPLICATIONS • Increased Reliability and Ruggedness • Avionics • Power-Down and Overvoltage Protected

M112

Abstract: SD1541-01 SD1541-1 A 1458
Contextual Info: SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 400 W min. DME 1025 - 1150 MHz • 6.5 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND

T491D476M020AS

Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain

TAN300

Contextual Info: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven

700 v power transistor

Contextual Info: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

TACAN

Abstract: SD1540 SD1540-08 SD1540-8
Contextual Info: SD1540-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS typ. IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz 290 WATTS (typ.) TACAN 960 - 1215 MHz 6.3 dB MIN. GAIN

RXB12350Y

Contextual Info: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

Contextual Info: ALLEN AVIONICS, INC. DIL CASE GENERAL USAGE TRANSFORMER SERIES FEATURE: •0.250“ maximum height from seating plane. ■ Low leakage inductance, winding capacitance, and DC resistance. ■ More economical than discrete transformers, four transformers per package.

mode 5 IFF

Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

Contextual Info: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE CLOCK OSCILLATORS FEATURES APPLICATIONS • Tested -55 to +225°C, Operation to 300°C • Down-Hole Oil Well • CMOS/TTL Compatible • Avionics • Output Frequencies of 24KHz— 20MHz

Contextual Info: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE 5.0V VOLTAGE REFERENCE HTREF-05 FEATURES APPLICATIONS • Tested -55 to +225°C, Operation to 275°C • Down-Hole Oil Well • Optional External Biasing • Avionics • 8mA Output Current

Contextual Info: Honeywell HTMOS High Temperature Products Advance Information HIGH TEMPERATURE NEGATIVE LINEAR REGULATOR HTNLREG FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current to -300 mA • Avionics • Adjustable or Calibrated -15, -10, and -5V Output