Avance
Abstract: No abstract text available
Text: Uddannelsesplan efterår 2000 og forår 2001 September Avanceret Assembly November 16. – 18. CATIA V5 grunduddannelse CATIA V5 grunduddannelse for V4 brugere Oktober 11. – 13. 8. – 10. 26. 23. 23. 02. – 03. 14. – 15. 21. Freestyle Shaper Februar
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DK-7800
Avance
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area
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FQAF34N20
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area
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FQPF6N50
O-220F
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area
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FQPF6N25
O-220F
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area
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FQPF5N20
O-220F
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQP8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. • Extended Safe Operating Area
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FQP8N25
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQP6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area
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FQP6N25
O-220
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.
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FQB19N20L,
FQI19N20L
FQB19N20L
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQP4N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area
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FQP4N50
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB6N25, FQI6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ.
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FQB6N25,
FQI6N25
FQB6N25
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQA9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area
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FQA9N50
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FQP6N50
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area
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FQP6N50
O-220
FQP6N50
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQP4N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 7.0nC Typ. • Extended Safe Operating Area
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FQP4N20L
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQA16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area
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FQA16N25
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FQD7N20
Abstract: No abstract text available
Text: QFET N-CHANNEL FQD7N20, FQU7N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ.
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FQD7N20,
FQU7N20
FQD7N20
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQD12N20, FQU12N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 18nC Typ.
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FQD12N20,
FQU12N20
FQD12N20
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB9N50, FQI9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.
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FQB9N50,
FQI9N50
FQB9N50
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FQA34N20
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area
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FQA34N20
FQA34N20
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB4N25, FQI4N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ.
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FQB4N25,
FQI4N25
FQB4N25
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Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area
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FQAF19N20
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area
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FQP19N20
O-220
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area
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FQP16N25
O-220
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQD8N25, FQU8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.
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FQD8N25,
FQU8N25
FQD8N25
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ALC100P
Abstract: Avance Logic 24.576MHZ ALC100 Crystal quartz 24.576MHz ALC200 10pF capacitors 22pf equivalent HC-49 Crystal 16 MHz 10 pF
Text: Avance Logic, Inc. ALC100 Quartz Crystal Requirement for ALC100/ALC100P This document describes the quartz crystal requirements for clocking ALC100/P. 2. Crystal Requirements General Specifications Holder Type Crystal Freq. Oscillation Mode Load Cap. CL
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ALC100
ALC100/ALC100P
ALC100/P.
ALC100/P
576MHz.
ALC100/P
ALC200.
100mW
ALC100P
Avance Logic
24.576MHZ
ALC100
Crystal quartz 24.576MHz
ALC200
10pF capacitors
22pf equivalent
HC-49
Crystal 16 MHz 10 pF
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