AV 2.2 K Search Results

HSUL-12

Abstract: CPRI CDR
Contextual Info: Arria V Device Datasheet July 2012 AV-51002-2.2 AV-51002-2.2 Datasheet This datasheet describes the electrical characteristics, switching characteristics, configuration specifications, and I/O timing for Arria V devices. Arria V devices are offered in commercial and industrial grades. Commercial devices

AD8351S

Contextual Info: PRELIMINARY TECHNICAL DATA Low Distortion Differential RF/IF Amplifier AD8351 Preliminary Technical Data FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB

AD8351S

Contextual Info: PRELIMINARY TECHNICAL DATA Low Distortion Differential RF/IF Amplifier AD8351 Preliminary Technical Data FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB

RGP2

Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM –3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain 0 dB ≤ AV ≤ 26 dB Differential interface Low noise input stage 2.7 nV/√Hz at AV = 10 dB

Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB Differential interface Low noise input stage 2.7 nV/√Hz at AV = 10 dB

Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz

AD8351ARM-R2

Abstract: AD8351S AD8351ARM-REEL7 AD8351-EVAL ETC1-1-13 RM-10 AD6645 AD8350 AD8351 AD8351ARM
Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz

AD8351S

Abstract: etc1-1-13 80MHZ AD6645 AD8350 AD8351 AD8351ARM AD8351ARM-REEL7 AD8351-EVAL RM-10
Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB £ AV £ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/÷Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz

12V ENERGY LIGHT CIRCUIT DIAGRAM

Abstract: AD8351S 80MHZ AD6645 AD8350 AD8351 AD8351ARM AD8351ARM-REEL7 AD8351-EVAL ETC1-1-13
Contextual Info: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB £ AV £ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/÷Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz

Contextual Info: @ M ITEL DS402ST Rectifier Diode SEMICONDUCTOR Supersedes August 1995 version, DS4183 - 2.2 DS4183 - 2.3 March 1998 KEY PARAMETERS v RRM 1400V 505A Jf AV 5600A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

Contextual Info: SEPTEMBER 1995 SV20 DS4085-2.2 SV20 RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 2000V VRRM 220A IF AV 4000A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ High Surge Capability.

Contextual Info: SEPTEMBER 1995 TV30 DS4086-2.2 TV30 RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 2000V VRRM 335A IF AV 6000A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ High Surge Capability.

DS804SE18

Abstract: DS804SE22 80505 DS804SE DS804SE19 DS804SE20 DS804SE21 DS804SE17
Contextual Info: AUGUST 1995 DS804SE DS4185-2.2 DS804SE RECTIFIER DIODE APPLICATIONS KEY PARAMETERS • Rectification. VRRM IF AV IFSM ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. 2200V 920A 11250A ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

ds418

Abstract: DS804SE18 11250A
Contextual Info: AUGUST 1995 DS804SE DS4185-2.2 DS804SE RECTIFIER DIODE APPLICATIONS KEY PARAMETERS • Rectification. VRRM IF AV IFSM ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. 2200V 920A 11250A ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

Contextual Info: @ M ITEL TV30 Rectifier Diode SEMICONDUCTOR Supersedes Septem ber 1995 version, DS4086 - 2.2 DS4086 - 2.3 KEY PARAMETERS V RRM 2000V 335A Jf AV 6000A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998

Contextual Info: AUGUST 1995 DS402ST DS4183-2.2 DS402ST RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 1400V VRRM 505A IF AV 5600A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

KK300

Contextual Info: Power S em icon du ctor Devices -, Fast Sw itching T hyristors— Stud Type I t av V drm I tsm v @Tc=75t: V rrm @50HZ kA A V V KK20/12 20 0.3 2.2 1200 KK50/12 50 1.0 2.4 KK100/12 100 2.0 KK200/12 200 1200 3.8 2.2 KK300/12 300 5.7 Model V qt Iqt A V mA

DCR1594SW28

Abstract: DCR4100W30 DCR4100W35 DCR4100W40 DCR4100W42 DCR2950W DCR4910W LN24005
Contextual Info: DCR4100W42 Phase Control Thyristor Preliminary Information DS5753-2.2 June 2005 LN24005 FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies

DS4231

Contextual Info: M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 6000V 1690A J f AV

Contextual Info: DCR5450W22 Phase Control Thyristor Preliminary Information DS5752-2.2 October 2006 LN24915 FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies

Contextual Info: SV10 M ITEL Rectifier Diode SEMICONDUCTOR DS4084 - 2.3 Supersedes Septem ber 1995 version, DS4064 - 2.2 KEY PARAMETERS V RRM 2500V 180A Jf AV 2200A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998

Contextual Info: SEPTEMBER 1995 SV10 DS4084-2.2 SV10 RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 2500V VRRM 180A IF AV 2200A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ High Surge Capability.

TH 46 Thyristor

Abstract: XT2116-1201 DS4674
Contextual Info: @ M ITEL XT2116 Fast Turn-on Asymmetric Thyristor SEMICONDUCTOR Supersedes January 1997 version, DS4674 - 2.1 DS4674 - 2.2 APPLICATIONS • Pulse Modulators. ■ Laser Diode Triggering. March 1998 KEY PARAMETERS V DRM 1600V I 50A J t AV 800A TSM dldt 2000A/(is

LIC AGENTS DATA

Contextual Info: SV20 M ITEL Rectifier Diode SEMICONDUCTOR DS4085 - 2.3 Supersedes Septem ber 1995 version, DS4085 - 2.2 KEY PARAMETERS V RRM 2000V 220A Jf AV 4000A FSM APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.