AUSTERLITZ Search Results

austerlitz

Abstract: transistor k42 Layouts
Contextual Info: austerlitz electronic Kühlkörper für Plastik- und TO 3 - Transistoren Heat sinks for plastic and TO 3 transistors. Dissipateurs pour des transistors plastiques et les types TO 3 Höhe mm : 13/20/26/32 (Toleranz-1) Material: AL 1,5 Oberfläche: schwarz eloxiert

1992E

Abstract: austerlitz 1351
Contextual Info: austerlitz electronic Kühlschienen - Kühlsysteme mit Kartenführungen für die 482,6mm Gehäuse. Kühlschienen mit Kartenführungen für 19" -Baugruppenträger Heat-sinks with guides for 19" housings KS 135./19 Refroidisseurs avec guides pour habillages 19"

austerlitz

Contextual Info: austerlitz electronic Flüssigkeitskühler - Liquid Coolers Dissipateurs à Liquide WK 85 Aluminium-Kühlkanal Channel-walls aluminium Canaux en aluminium Länge mm : 100/200/300/400 Material: ALMgSi 05 Anschlußgewinde: G 1/4" Gewicht (ohne Anschlußarmaturen)

Contextual Info: austerlitz electronic Kühlschienen Extruded profiles / Profiles extrudes de refroidissement KS 55.1 R th K/W: ca. 3,6 Material: AIMgSi 0,5 Oberfläche: schwarz eloxiert Gewicht g : 117 Gehäuse: TOP 3/T0 220 im Rastermaß 2.54 Bestell-Nr. KS 55.1-84 E 5 x M3

austerlitz

Abstract: 75-100
Contextual Info: austerlitz electronic Kühlschienen Extruded profiles / Profiles extrudes de refroidissement KS 50 Länge mm : 25/37,5/50/75/100/150/ 1000 Gewicht (g/cm): 5,4 10 Verlustleistung P (W) KS 54.1 R th K/W: ca. 3,5 bzw. 1,9 Material: AIMgSi 0,5 Oberfläche: schwarz eloxiert

ventilateur

Abstract: austerlitz heatsink Austerlitz Kondensator 119 centrifugal moteurs
Contextual Info: austerlitz electronic KL4 KS 42 Segmente-Typ KS 42, Bauelemente Länge des Kühlprofils (mm) Gesamtlänge ohne Lüfter (mm) Befestigungsmaß (mm) Gesamtlänge mit Lüfter (mm) 1 35 75 63 110 2 75 115 103 150 3 115 155 143 190 4 155 195 183 230 5 195 235

k 1225

Abstract: Dissipateur AUSTERLITZ k 351 heatsink Austerlitz
Contextual Info: austerlitz electronic Kühlkörper für Plastik-Transistoren Heat sinks for plastic transistors Dissipateurs pour transistors en plastique K 12-25 R th K/ W: 30 Material: AL 1,5 Oberfläche: schwarz eloxiert Gewicht g : 5 Gehäuse: SOT 32 Bestell-Nr.: K 12-25

29150

Abstract: Kombi
Contextual Info: austerlitz electronic Kühlkörper für IC und Plastik-Transistoren Heat sinks for IC and plastic-transistors. Dissipateurs pour des IC et transistors plastiques. KS 12.1 Material: ALMg Si 05 Oberfläche: schwarz eloxiert Gewicht g : 1 Gehäuse: TO 220 Bestell-Nr.: KS 12.1-(Länge) E 1 x M 3

GCM15

Contextual Info: austerlitz electronic Kühlschienen Extruded profiles / Profiles extrudes de refroidissement KS 70.5 R th K/W: 2,3 bzw. 1,4 Material: AIMgSi 0,5 Oberfläche: schwarz eloxiert Gewicht g : 68 bzw. 135 Gehäuse: TO 220/TOP 3 Bestell-Nr.: KS 70.5-37,5 E 3 x M3

austerlitz

Abstract: clip ae 3000 2201
Contextual Info: austerlitz electronic Kühlkörper für Transistoren Heat sinks for transistors. Dissipateurs pour transistors KS 32 R th K/W: 8 Material: ALMgSi 05 Oberfläche: schwarz eloxiert Gewicht g : 21 Bestell-Nr.: KS 32-32 E 2 x ∅ 3.4 Verlustleistung P (W) KS 32

austerlitz

Abstract: 74Ks
Contextual Info: austerlitz electronic Kühlschienen Extruded profiles / Profiles extrudes de refroidissement KS 108 Länge mm : 50/75/100/150/1000 Gewicht (g/cm): 25,6 10 Verlustleistung P (W) KS 111 Länge (mm): 50/75/100/150/1000 Gewicht (g/cm): 17,5 25 20 30 Länge (mm): 50/75/100/150/1000

Super-247 Package

Abstract: extrusion mounted clip 20N-40N igbt clip Kool pad igbt clip rail
Contextual Info: Application Note AN-997 Mounting Guidelines for the Super-247 By Andrew Sawle and Arthur Woodworth Table of Contents Page Introduction .1 A Breakdown of System Thermal Resistance .1

V5805

Abstract: austerlitz v5805 Aavid Thermalloy 60885 24v 12v 10A regulator alutronic DC to DC regulator with 24v 10A output regulator 24v 10A regulator 24v input 5v to 24v ,10a output regulator transistor R1005 GS-R1005
Contextual Info: GS-R1005 50W STEP-DOWN SWITCHING REGULATOR Type GS-R1005 Vi Vo Io 12 to 36 V 5V 10 A FEATURES Wide input voltage range 12 to 36V High efficiency (80% min.) Parallel operation with current sharing Synchronization Remote inhibit/enable Remote load voltage sense

BGF901-20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

2933

Abstract: 300WPEP amplifier 400W 10w 900MA DB-2933-54 JESD97 M177 SD2933
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

Contextual Info: SYMBOLS FOR SIMPLE ELECTRICAL CIRCUITS + Voltage Source Current Source es es appears in the circuit for i is is supplied to the circuit for all v DECIMAL FACTOR PREFIXES FACTOR PREFIX SYMBOL 1018 1015 1012 109 106 103 102 101 exa peta tera giga mega E P T

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

24v 12v 10A regulator

Abstract: alutronic V5805 austerlitz v5805 GS-R1012 moroco PR139
Contextual Info: r z j S G S -T H O M S O N *•7 / , E WHgTMMOtgi G S -R 1 0 1 2 120W STEP-DOWN SWITCHING REGULATOR Type G S-R1012 Vi V0 lo 18 to 36 V 12 V 10 A FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ W ide input voltage range 18 to 36V High efficiency (90% min.) Parallel operation with current sharing

STAC244

Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Contextual Info: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider

SD2933

Abstract: free transistor bs 200 M177 DB-2933-54 2933 JESD97 300WPEP 300w class ab amplifier m174 0400X0
Contextual Info: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%

BGF844

Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

V5805

Abstract: Aavid Thermalloy 60885 austerlitz v5805 LZ50 alutronic PR159 alutronic KS1003 V5382 V5280 PR159
Contextual Info: APPLICATION NOTE HEATSINK CALCULATION AND EXAMPLES In many cases, GS-Rx and GSxTy-z modules don’t require any additional cooling methods because the dimensions and the shape of the metal boxes were studied to offer the minimum possible thermal resistance case to ambient for a given module.

M177

Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

IXAN0029

Abstract: D8203-3 ixan00 AB-9801 D-68623 IXFX55N50 PLUS247 SIL-PAD to-247 MOSFET IGBT THEORY AND APPLICATIONS 300Kpa
Contextual Info: IXAN0029 AB-9801 New Packages for Pressure Mounting APPLICATION BRIEF AB-9801 Prepared by Ralph E. Locher Introduction The use of pressure to mount discrete power semiconductor packages to heat sinks has been rapidly growing for many reasons. When properly executed, it has proven to be a cost effective technique and