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    AUDIO LATERAL MOSFET Search Results

    AUDIO LATERAL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    AUDIO LATERAL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ILP toroidal transformer

    Abstract: at2404 lateral mosfet audio amplifier HY200 amplifier mode transformer 300w amplifier power amplifier transformer HY2006 toroidal transformer 100v audio amplifier
    Text: DATA SHEET HY2006 240 WATTS The ILP HY2006 Power Amplifier is a fully Encapsulated high quality power amplifier with integral heatsink. Using the latest Lateral MOSFET's ensures a robust amplifier with excellent sonic characteristics. Mounting can be achieved by the use of T-slots in the heatsink and the nuts and


    Original     		HY2006 100Hz) 70kHz 100dB 500mV ILP toroidal transformer at2404 lateral mosfet audio amplifier HY200 amplifier mode transformer 300w amplifier power amplifier transformer toroidal transformer 100v audio amplifier PDF

    lateral mosfet audio amplifier

    Abstract: at2404 ILP toroidal transformer 300w amplifier power amplifier transformer toroidal transformer amplifier mode transformer HY2007 audio power amplifier using mosfet 400 watt audio amplifier MOSFET
    Text: DATA SHEET HY2007 240 WATTS The ILP HY2007 Power Amplifier is a fully encapsulated high quality power amplifier with Integral Power Supply and heatsink. Using the latest Lateral MOSFET's ensures a robust amplifier with excellent sonic characteristics. Mounting can be achieved by the use of T-slots in the heatsink and the nuts and


    Original     		HY2007 100Hz) 50kHz 100dB lateral mosfet audio amplifier at2404 ILP toroidal transformer 300w amplifier power amplifier transformer toroidal transformer amplifier mode transformer audio power amplifier using mosfet 400 watt audio amplifier MOSFET PDF

    FET pair n-channel p-channel

    Abstract: P-Channel Depletion-Mode MOSFET
    Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant


    Original     		PDF

    SD214DE linear

    Abstract: SD214DE
    Text: SD210DE/214DE N-CHANNEL LATERAL DMOS JFET SWITCH Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		SD210DE/214DE SD210DE/214DE SD214DE 1250C SD214DE linear PDF

    SD210DE

    Abstract: SD214DE
    Text: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		SD210DE/214DE SD210DE/214DE 1500C 1250C SD210DE SD214DE PDF

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143 PDF

    SD210DE

    Abstract: A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		SD-SST210/214 SD210DE SD214DE SST210 SST214 1500C 1250C SD210DE A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear PDF

    lateral mosfet audio amplifier

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier JFET APPLICATIONS J201 N-channel JFET super beta transistor N CHANNEL jfet ultra Low Noise Audio Amplifier diode ZENER A8 sd211de spice J201 spice depletion n-channel mosfet to-92
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		SD-SST211/213/215 SD211DE/SST211 lateral mosfet audio amplifier N CHANNEL jfet Low Noise Audio Amplifier JFET APPLICATIONS J201 N-channel JFET super beta transistor N CHANNEL jfet ultra Low Noise Audio Amplifier diode ZENER A8 sd211de spice J201 spice depletion n-channel mosfet to-92 PDF

    sd211de

    Abstract: SD213DE
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS JFET SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		SD-SST211/213/215 SD211DE/SST211 1250C sd211de SD213DE PDF

    SST215

    Abstract: sd211de SD215DE SD211 SD214 SST213
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		SD-SST211/213/215 SD211DE/SST211 1250C SST215 sd211de SD215DE SD211 SD214 SST213 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns


    Original     		SD210DE/214DE SD210DE SD214DE SD210DE 214DE PDF

    ultra FAST DMOS FET Switches

    Abstract: 60659 B3520 B3520K4 B3540 B3540K4-XX CT-3520
    Text: Bay Linear Inspire the Linear Power B3520/B3540 N-CHANNEL DMOS FET SWITCH High Gain Level Shifter Series Description Features The B3520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency wireless


    Original     		B3520/B3540 B3520 CT3520 ultra FAST DMOS FET Switches 60659 B3520K4 B3540 B3540K4-XX CT-3520 PDF

    B2515

    Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
    Text: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The


    Original     		B2520/B2515 B2520 B2515 120dB B2520 B2500 B2515 ultra FAST DMOS FET Switches B2520K4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD210DE/214DE N-CHANNEL LATERAL DMOS SWITCH PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS=10V 0.5 2 SD214DE 20 1.5 45 @ VGS=10V 0.5 2 Features Benefits Applications • Ultra-High Speed Switching—tON: 1ns


    Original     		SD210DE/214DE SD210DE SD214DE SD210DE/214DE 214DE PDF

    Untitled

    Abstract: No abstract text available
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) C rss Max (pF) 1.5 rDS(on) Max (Ω) 15 45 @ V GS=10V SD211DE 30 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V


    Original     		SD-SST211/213/215 SD211DE SD213DE SD215DE SST211 SST213 SST215 PDF

    TPS40K

    Abstract: ti n channel mosfet NexFet High Current CSD75205W1015 CSD75204W15 CSD16401Q5 NexFET WLP 1500 Csd25302q2 CSD23201W10
    Text: NexFET Power MOSFETs Quick Reference Guide TM Overview Today’s designers of high-power computing, networking, server systems and power supplies face increasingly stringent energy-efficient requirements. Texas Instruments’ acquisition of CICLON Semiconductor Device


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) C rss Max (pF) 1.5 rDS(on) Max () 15 45 @ V GS=10V SD211DE 30 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5


    Original     		SD-SST211/213/215 SD211DE SD213DE SD215DE SST211 SST213 SST215 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) C rss Max (pF) SD211DE 30 1.5 45 @ VGS=10V 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5


    Original     		SD-SST211/213/215 SD211DE SD213DE SD215DE SST211 SST213 SST215 25-year-old, PDF

    Untitled

    Abstract: No abstract text available
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max ( ) C rss Max (pF) SD211DE 30 1.5 45 @ VGS=10V 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5 2


    Original     		SD-SST211/213/215 SD211DE SD213DE SD215DE SST211 SST213 SST215 25-year-old, PDF

    Exicon

    Abstract: No abstract text available
    Text: E X IC O N E DATA SHEET 250V N/P LATERAL MOSFETS HIGH POWER 125W ECF10A//P25 HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS Device Family Mechanical Data Dimensions in mm Drain O O - Gate CASE: T 0 3 ABSOLUTE MAXIMUM RATING T case = 25 °C unless otherwise stated


    OCR Scan     		ECF10A//P25 ECF10-25 Sou15 300uS, 0I702 Exicon PDF

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D PDF

    mosfet 500 watts audio amplifier

    Abstract: lateral mosfet audio amplifier 500 watts audio amplifier diagram audio lateral Mosfet IDI TRANSISTORS igbt power audio amplifier semelab lateral mosfets
    Text: im E tti IDI Sem elab Power Management Division “SMARTPACK” POWER MODULES A versatile, cost efficient approach to Power Modules for Commercial, Professional and Industrial applications. A modular, but customisable lead frame along with 4 standard package outlines give great flexibility to the


    OCR Scan     		PDF

    til 701

    Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
    Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of


    OCR Scan     		100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral PDF

    SD21

    Abstract: SILICONIX SD21 to72 sd21 SD214DE-2
    Text: SD21 ODE-2/214DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMMARY Part Number V (BR)DS Min (V) VGS(,h) Max (V) rDSion) Max (Q) SD21 ODE-2 30 1.5 45 @ V q s = 10 V 0.5 2 SD214DE-2 20 1.5 45 @ V q S = 10 V


    OCR Scan     		ODE-2/214DE-2 SD214DE-2 S-02889--Rev. 21-Dec-00 S-02B89--Rev. SD21 SILICONIX SD21 to72 sd21 SD214DE-2 PDF