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Hewlett Packard Co ATF-13736--TR1
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ATF13736TR1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ATF-13736-TR1		Agilent Technologies	2-16 GHz Low Noise Gallium Arsenide FET		Original	PDF
ATF-13736-TR1		Agilent Technologies	2-16 GHz Low Noise Gallium Arsenide FET		Original	PDF
ATF13736-TR1		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

ATF13736TR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ATF-13736 Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736 Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective	Original	ATF-13736 ATF-13736 5965-8722E 5967-5771E DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736	PDF
ATF-13736 Abstract: ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective	Original	ATF-13736 ATF-13736 ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package	PDF
Untitled Abstract: No abstract text available Text: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective	Original	ATF-13736 ATF-13736 5965-8722E 5967-5771E	PDF
Avantek S Abstract: Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323 Text: A V A N T E K INC 2QE T> 0AVANTEK lllllbt M ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • ODGbSS? 7 High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB	OCR Scan	ATF-13736 CA95C54 Avantek S Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323	PDF
HRMA-0470B Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic	OCR Scan	E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61	PDF
ATF-13736 Abstract: No abstract text available Text: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor m ance gallium arsenide Schottkybarrier-gate field effect transistor	OCR Scan	ATF-13736 ATF-13736 5965-8722E	PDF
Untitled Abstract: No abstract text available Text: Who IHEWLETT mL'EM ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET PACKARD 36 micro-X Package1 Features • • • • • High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <i b at 12 GHz Low Noise Figure: 1.8 dB typical at 12 GHz	OCR Scan	ATF-13736	PDF
ATF13736 Abstract: No abstract text available Text: mLliM PACKARD What H E W L E T T * 2 -1 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low Noise Figure: 1.8 dB Typical at 12 GHz • High Associated Gain: 9.0 dB Typical at 12 GHz • High Output Power: 17.5 dB Typical at 12 GHz	OCR Scan	ATF-13736 ATF-13 ATF13736	PDF