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    ATC600S3R3BT250XT Price and Stock

    Kyocera AVX Components 600S3R3BT250XT

    Silicon RF Capacitors / Thin Film 250volts 3.3pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600S3R3BT250XT 2,770
    • 1 $1.56
    • 10 $0.841
    • 100 $0.75
    • 1000 $0.577
    • 10000 $0.456
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    American Technical Ceramics Corp ATC600S3R3BT250XT

    CAPACITOR, MULTILAYER, CERAMIC, 250V, C0G, 30PPM/CEL TC, 3.3PF, SURFACE MOUNT, 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC600S3R3BT250XT 128
    • 1 $1.5
    • 10 $1.5
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.75
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    Kyocera AVX Components 600S3R3BT250XT/500

    Silicon RF Capacitors / Thin Film 250volts 3.3pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 600S3R3BT250XT/500 Reel 10,000 500
    • 1 -
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    • 100 -
    • 1000 $0.571
    • 10000 $0.451
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    ATC600S3R3BT250XT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R04350B

    Abstract: MW7IC2725GNR1 wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725N MW7IC2725NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 2, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 R04350B wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725NBR1

    MW7IC2725GNR1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1

    ATC600S3R3BT250XT

    Abstract: ON SEMICONDUCTOR J122
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT ON SEMICONDUCTOR J122

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT2000N Rev. 0, 5/2014 RF LDMOS Integrated Power Amplifiers Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V


    Original     		PDF MHT2000N MHT2000NR1 MHT2000GNR1 5/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1

    MW7IC2725N

    Abstract: MW7IC2725GNR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 MW7IC2725NR1 ATC600S6R8CT250XT
    Text: Document Number: MW7IC2725N Rev. 3, 1/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage


    Original     		PDF MW7IC2725N MW7IC2725N MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 fair-rite bead 2675 IRL 1530 AN1977 AN1987 JESD22-A114 MW7IC2725NBR1 ATC600S6R8CT250XT

    ATC600S3R3BT250XT

    Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N ATC600S3R3BT250XT MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT A115

    ATC600S6R8CT250XT

    Abstract: ATC600S2R4BT250XT ATC600S3R3BT250XT A114 A115 AN1977 AN1987 C101 JESD22 MW7IC2425GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2425N Rev. 0, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific


    Original     		PDF MW7IC2425N MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 ATC600S6R8CT250XT ATC600S2R4BT250XT ATC600S3R3BT250XT A114 A115 AN1977 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    ATC600S3R3BT250XT

    Abstract: J376 MW7IC008 vgls
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT J376 MW7IC008 vgls

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF2004NB Rev. 0, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MMRF2004NBR1 The MMRF2004NB wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage


    Original     		PDF MMRF2004NB MMRF2004NBR1 MMRF2004NB

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    MW7IC008N

    Abstract: MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234