ATC600B5R6BT500XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 4, 2/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large-signal output applications at 2450 MHz. Devices

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 GRM55DR61H106KA88B C1825C103J1RAC
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz. Device

GRM55DR61H106KA88B

Abstract: AN1955 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 3, 3/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large- signal output applications at 2450 MHz.

GRM55DR61H106KA88B

Contextual Info: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

AN1955

Abstract: GRM55DR61H106KA88B kemet c chip data sheet Resistor mttf 465B A114 A115 JESD22 MRF6S24140H MRF6S24140HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 2, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.

GRM55DR61H106KA88B

Abstract: freescale gps ATC600B5R6BT500XT AN1955 C1825C103J1RAC 145170
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 4, 2/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large-signal output applications at 2450 MHz. Devices

465B

Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.