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    Kyocera AVX Components 100B6R8BW500XT

    Silicon RF Capacitors / Thin Film 500volts 6.8pF
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    Kyocera AVX Components 100B6R8BT1500XT

    Silicon RF Capacitors / Thin Film 6.8PF 1.5KV .1PF 1111
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    TTI 100B6R8BT1500XT Reel 500 500
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    Kyocera AVX Components 100B6R8BT500XT

    Silicon RF Capacitors / Thin Film 500volts 6.8pF
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    TTI 100B6R8BT500XT Reel 500
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    Kyocera AVX Components 100B6R8BW1500XT

    Silicon RF Capacitors / Thin Film 6.8PF 1500V .1PF 1111
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    ATC100B6R8B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3

    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9102N MRF8S9102NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    MRF6S19060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    MRF6S21060N

    Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1

    C5750X5R1H106MT

    Abstract: MRF7S21210HS S2116
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116

    mcr63

    Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 mcr63 T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HSR3 mcr63v477m

    MRF6S19060N

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1

    transistors BC 458

    Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 transistors BC 458 BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22

    j-12000

    Abstract: j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage


    Original     		PDF MW7IC2240N MW7IC2240N MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 j-12000 j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3

    ATC600 capacitor

    Abstract: MRF7S21170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 ATC600 capacitor MRF7S21170HS

    232272461009

    Abstract: MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21120H MRF8S21120HR3 MRF8S21120HSR3 MRF8S21120HR3 232272461009 MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2240N MW7IC2240N MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21120H MRF8S21120HR3 MRF8S21120HSR3 MRF8S21120HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21080H Rev. 0, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21080HR3 MRF7S21080HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21080H MRF7S21080HR3 MRF7S21080HSR3 MRF7S21080HR3

    J717

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 J717

    AFT21S230S

    Abstract: aft21s232s C5750X7S2A106M
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3 aft21s232s C5750X7S2A106M

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 0, 10/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S232SR3