ATC100B6R8B Search Results

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

ATC 1084

Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

MRF6S19060N

Contextual Info: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

C4532X5R1H475MT

Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
Contextual Info: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

MRF6S21060N

Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

C5750X5R1H106MT

Abstract: MRF7S21210HS S2116
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to

mcr63

Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

transistors BC 458

Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

j-12000

Abstract: j6201 J557 ATC100B0R6BT250XT J1069 ATC100B8R2BT250XT GRM31CR71H475KA12L A114 A115 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to

ATC600 capacitor

Abstract: MRF7S21170HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

232272461009

Abstract: MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Document Number: MW7IC2240N Rev. 1, 6/2011 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21080H Rev. 0, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21080HR3 MRF7S21080HSR3 Designed for CDMA base station applications with frequencies from 2110 to

J717

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

AFT21S230S

Abstract: aft21s232s C5750X7S2A106M
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 0, 10/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.