ATC100B4R7BT500XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

MRF6S21060N

Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

marking WB1 sot-23

Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

35d21

Abstract: MRF6S20010GNR1 j3068 1990 1142 MRF6S20010N A113 ATC100B9R1BT500XT A115 AN1955 CDR33BX104AKYS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

t490d106k035at

Abstract: j3068
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

J2190

Abstract: A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 MRF6S27015GNR1 MRF6S27015NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 1, 6/2007 RF Power Field Effect Transistors MRF6S27015NR1 MRF6S27015GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to

ATC100B2R0BT500XT

Abstract: ATC100B0R5BT500XT ATC100B5R6BT500XT 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

MRF6S21060N

Contextual Info: Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

amplifier MA-920

Abstract: ATC100B470JT500XT MRF8S9102NR3 MOSFET 355 J314 ATC-100B-3R0 EQUIVALENT FOR J171 ATC100B3R9BT500XT MOSFET IRL arco j314
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

MRF6S9125N

Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

TRANSISTOR J477

Abstract: J890
Contextual Info: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

MRF6S21060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 4, 1/2014 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 3, 6/2009 RF Power Field Effect Transistors MRF6S20010NR1 MRF6S20010GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with

Contextual Info: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with

MRF8S9260HSR3

Abstract: MRF8S9260HR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H
Contextual Info: Document Number: MRF8S9260H Rev. 0, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with

CRCW12061000FKTA

Abstract: ad250 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 4, 12/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and