Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to
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MRF6S27050H
MRF6S27050HR3
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MRF9030N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts
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MRF9030N
MRF9030NBR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to
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MRF7S27130H
MRF7S27130HR3
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MRF9030N
Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9030N
MRF9030NR1
MRF9030N
945 TRANSISTOR
A113
ATC100B470JT500XT
MRF9030NBR1
MRF9030NR1
T491D106K035AT
mrf9030n stability
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MRF9030N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9030N
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250GX-0300-55-22
Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to
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MRF6S27050H
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27050HR3
250GX-0300-55-22
j6808
GRM32RR71H105KA01B
2508051107Y0
F 5M 365 R
T491D106K050at
A114
A115
AN1955
C101
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2595MHz
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to
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MRF7S27130H
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A114
Abstract: A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 J1567 2595MHz ATC100B3R0BT500XT
Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 0, 9/2007 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to
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MRF7S27130H
MRF7S27130HR3
MRF7S27130HSR3
MRF7S27130HR3
A114
A115
AN1955
C101
JESD22
MRF7S27130HSR3
J1567
2595MHz
ATC100B3R0BT500XT
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567 tone
Abstract: A114 A115 AN1955 C101 JESD22 MRF7S27130HR3 MRF7S27130HSR3 ATC100B3R6BT500XT 2595MHz
Text: Freescale Semiconductor Technical Data Document Number: MRF7S27130H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S27130HR3 MRF7S27130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to
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MRF7S27130H
MRF7S27130HR3
MRF7S27130HSR3
MRF7S27130HR3
567 tone
A114
A115
AN1955
C101
JESD22
MRF7S27130HSR3
ATC100B3R6BT500XT
2595MHz
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