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Kyocera AVX Components 100B2R2BT500XT Silicon RF Capacitors / Thin Film 500volts 2.2pF
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Mouser Electronics	100B2R2BT500XT		235			1 $8.69 10 $6.03 100 $5.04 1000 $4.28 10000 $4.28	Buy Now

ATC100B2R2BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C5750X7S2A106MT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz	Original	MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT	PDF
NIPPON CAPACITORS Abstract: Transistor J438 CRCW08051001FKEA MRF21010 Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 MRF6S18060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and	Original	MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1	PDF
CRCW08051001FKEA Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010 Text: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010--1 MRF21010LR1 CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010	PDF
CRCW08051001FKEA Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010 Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010	PDF
J209 Abstract: MW7IC3825GN MW7IC3825GNR1 MW7IC3825NR1 Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage	Original	MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 J209 MW7IC3825GN	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 4, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and	Original	MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1	PDF
atc100B100GT500XT Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21010LSR1 MRF21010 atc100B100GT500XT ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi	PDF
CRCW08052201FKEA Abstract: CRCW080510R0FKE MRF21010-1 MRF21010 Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,	Original	MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010	PDF
AN1955 Abstract: ATC100B9R1CT500XT MRF5S19130H MRF5S19130HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H - 2 Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19130HSR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S19130H MRF5S19130HSR3 AN1955 ATC100B9R1CT500XT MRF5S19130HSR3	PDF
4000 watts power amplifier circuit diagram Abstract: 3600 watts power amplifier circuit diagram transistors BC 458 schematic diagram 800 watt power amplifier transistor BC 458 C4532X5R1H475M CRCW08051001FKEA MW7IC3825NBR1 MW7IC3825NR1 A114 Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 0, 11/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on - chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage	Original	MW7IC3825N MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 4000 watts power amplifier circuit diagram 3600 watts power amplifier circuit diagram transistors BC 458 schematic diagram 800 watt power amplifier transistor BC 458 C4532X5R1H475M CRCW08051001FKEA MW7IC3825NBR1 A114	PDF
IC 2030 schematic diagram Abstract: 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1 IC 2030 schematic diagram 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22	PDF
ATC100B9R1CT500XT Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 ATC100B6R2CT500X Text: Document Number: MRF5S19130H - 1 Rev. 3, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19130HR3 LIFETIME BUY Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S19130H MRF5S19130HR3 ATC100B9R1CT500XT 465B AN1955 MRF5S19130HR3 ATC100B6R2CT500X	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 3224w AN3263 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 3224w AN3263	PDF

Untitled Abstract: No abstract text available Text: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescales newest High Voltage 26 to 32 Volts LDMOS	Original	MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage	Original	MW7IC3825N MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1	PDF